| 1. |
- Balatsky, Alexander V., et al.
(författare)
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Functional Dirac Materials : Status and Perspectives
- 2018
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley-VCH Verlagsgesellschaft. - 1862-6254 .- 1862-6270. ; 12:11
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 2. |
- Brown, D. R., et al.
(författare)
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Relating phase transition heat capacity to thermal conductivity and effusivity in Cu2Se
- 2016
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Ingår i: Physica Status Solidi - Rapid Research Letetrs. - : Wiley. - 1862-6254 .- 1862-6270. ; 10:8, s. 618-621
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Tidskriftsartikel (refereegranskat)abstract
- Accurate measurement of thermal conductivity is essential to determine the thermoelectric figure-of-merit, zT. Near the phase transition of Cu2Se at 410 K, the transport properties change rapidly with temperature, and there is a concurrent peak in measured heat capacity from differential scanning calorimetry (DSC). Interpreting the origin as a broad increase in heat capacity or as a transient resulted in a three-fold difference in the reported zT in two recent publications. To resolve this discrepancy, thermal effusivity was deduced from thermal conductivity and diffusivity measurements via the transient plane source (TPS) method and compared with that calculated from thermal diffusivity and the two interpretations of the DSC data for heat capacity. The comparison shows that the DSC measurement gave the heat capacity relevant for calculation of the thermal conductivity of Cu2Se. The thermal conductivity calculated this way follows the electronic contribution to thermal conductivity closely, and hence the main cause of the zT peak is concluded to be the enhanced Seebeck coefficient.
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| 3. |
- Chey, Chan Oeurn, et al.
(författare)
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Fast piezoresistive sensor and UV photodetector based on Mn-doped ZnO nanorods
- 2015
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : John Wiley & Sons. - 1862-6254 .- 1862-6270. ; 9:1, s. 87-91
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Tidskriftsartikel (refereegranskat)abstract
- A low cost hydrothermal synthesis method to synthesize Mn-doped ZnO nanorods (NRs) with controllable morphology and structure has been developed. Ammonia is used to tailor the ammonium hydroxide concentration, which provides a source of OH– for hydrolysis and precipitation during the growth instead of HMT. The morphological, chemical composition, structural, and electronic structure studies of the Mn-doped ZnO NRs show that the Mn-doped ZnO NRs have a hexagonal wurtzite ZnO structure along the c-axis and the Mn ions replace the Zn sites in the ZnO NRs matrix without any secondary phase of metallic manganese element and manganese oxides observed. The fabricated PEDOT:PSS/Zn0.85Mn0.15O Schottky diode based piezoresistive sensor and UV photodetector shows that the piezoresistive sensor has pressure sensitivity of 0.00617 kPa–1 for the pressure range from 1 kPa to 20 kP and 0.000180 kPa–1for the pressure range from 20 kPa to 320 kPa with relatively fast response time of 0.03 s and the UV photodetector has both relatively high responsivity and fast response time of 0.065 A/W and 2.75 s, respectively. The fabricated Schottky diode can be utilized as a very useful human-friendly interactive electronic device for mass/force sensor or UV photodetector in everyday living life. This developed device is very promising for small-size, low-cost and easy-to-customize application-specific requirements. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
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| 4. |
- Geilhufe, R. Matthias, et al.
(författare)
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Chemical-Strain Induced Tilted Dirac Nodes in (BEDT-TTF)(2)X-3 (X = I, Cl, Br, F) Based Charge-Transfer Salts
- 2018
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley. - 1862-6254 .- 1862-6270. ; 12:11
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Tidskriftsartikel (refereegranskat)abstract
- The identification of novel multifunctional Dirac materials has been an ongoing effort. In this connection quasi 2-dimensional (BEDT-TTF)-based charge transfer salts are widely discussed. Here, we report about the electronic structure of alpha-(BEDT-TTF)(2)I-3 and kappa-(BEDT-TTF)(2)I-3 under a hypothetical substitution of iodine with the halogens bromine, chlorine, and fluorine. The decreasing size of the anion layer corresponds to applying chemical strain which increases tremendously in the case of (BEDT-TTF)(2)F-3. We perform structural optimization and electronic structure calculations in the framework of density functional theory, incorporating, first, the recently developed strongly constrained and appropriately normed semilocal density functional SCAN, and, second, van der Waals corrections to the PBE exchange correlation functional by means of the dDsC dispersion correction method. In the case of alpha-(BEDT-TTF)(2)F-3, the formation of over-tilted Dirac-type-II nodes within the quasi two-dimensional Brillouin zone can be found. For kappa-(BEDT-TTF)(2)F-3, the recently reported topological transition within the electronic band structure cannot be revealed.
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| 5. |
- Geilhufe, R. Matthias, et al.
(författare)
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Materials Informatics for Dark Matter Detection
- 2018
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley. - 1862-6254 .- 1862-6270. ; 12:11
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Tidskriftsartikel (refereegranskat)abstract
- Dark Matter particles are commonly assumed to be weakly interacting massive particles (WIMPs) with a mass in the GeV to TeV range. However, recent interest has shifted toward lighter WIMPs, which are more difficult to probe experimentally. A detection of sub-GeV WIMPs will require the use of small gap materials in sensors. Using recent estimates of the WIMP mass, we identify the relevant target space toward small gap materials (100 to 10 meV). Dirac Materials, a class of small- or zero-gap materials, emerge as natural candidates for sensors for Dark Matter detection. We propose the use of informatics tools to rapidly assay materials band structures to search for small gap semiconductors and semimetals, rather than focusing on a few preselected compounds. As a specific example of the proposed strategy, we use the organic materials database () to identify organic candidates for sensors: the narrow band gap semiconductors BNQ-TTF and DEBTTT with gaps of 40 and 38 meV, and the Dirac-line semimetal (BEDT-TTF)center dot Br which exhibits a tiny gap of approximate to 50 meV when spin-orbit coupling is included. We outline a novel and powerful approach to search for dark matter detection sensor materials by means of a rapid assay of materials using informatics tools.
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| 6. |
- Joel, Jonathan, et al.
(författare)
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On the assessment of CIGS surface passivation by photoluminescence
- 2015
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley. - 1862-6254 .- 1862-6270. ; 9:5, s. 288-292
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Tidskriftsartikel (refereegranskat)abstract
- An optimized test structure to study rear surface passivation in Cu(In,Ga)Se-2 (CIGS) solar cells by means of photoluminescence (PL) is developed and tested. The structure - illustrated in the abstract figure - is examined from the rear side. To enable such rear PL assessment, a semi-transparent ultrathin Mo layer has been developed and integrated in place of the normal rear contact. The main advantages of this approach are (i) a simplified representation of a rear surface passivated CIGS solar cell is possible, (ii) it is possible to assess PL responses originating close to the probed rear surface, and (iii) a stable PL response as a function of air exposure time is obtained. In this work, PL measurements of such structures with and without rear surface passivation layers have been compared, and the measured improvement in PL intensity for the passivated structures is associated with enhanced CIGS rear interface properties. [GRAPHICS] Transmission electron microscope (TEM) bright field cross-section image of the rear illuminated test structure fabricated for PL characterization.
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| 7. |
- Kotipalli, Ratan, et al.
(författare)
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Influence of Ga/(Ga plus In) grading on deep-defect states of Cu(In, Ga)Se-2 solar cells
- 2015
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley. - 1862-6254 .- 1862-6270. ; 9:3, s. 157-160
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Tidskriftsartikel (refereegranskat)abstract
- The benefits of gallium (Ga) grading on Cu(In, Ga) Se-2 (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive-level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free-carrier densities in the CIGS absorber, and their impact on the cell's open-circuit voltage V-oc. The parameter most constraining the cell's Voc is found to be the deep-defect density close to the space charge region (SCR ). In ungraded devices, high deep-defect concentrations (4.2 x 1016 cm(-3)) were observed near the SCR, offering a source for Shockley Read-Hall recombination, reducing the cell's Voc. In graded devices, the deep-defect densities near the SCR decreased by one order of magnitude (2.5 x 1015 cm(-3)) for back surface graded devices, and almost two orders of magnitude (8.6 x 1014 cm(-3)) for double surface graded devices, enhancing the cell's Voc. In compositionally graded devices, the free-carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band.
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| 8. |
- La Martina, Thomas, et al.
(författare)
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Dirac Nodes and Magnetic Order in M2X2 Transition-Metal Chalcogenides
- 2018
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley. - 1862-6254 .- 1862-6270. ; 12:11
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Tidskriftsartikel (refereegranskat)abstract
- In this study, we perform a computational analysis of the M2X2 transition-metal chalcogenides (TMCs). Using density functional theory with a spin-polarized generalized gradient approximation, we examine the magnetic and electronic properties for the antiferromagnetic and ferromagnetic states with M = Cr, Mn, and Fe and X = S and Se. After optimizing the geometric structure for stability, we examine the spin-polarized electronic structure, density of states, and Mulliken population. It is discovered that these materials are quasi-two-dimensional honeycomb lattices with metallic antiferromagnetic ground states. The structures consist of a distorted tetrahedral crystal-field symmetry that has a distinct magnetic moment. An analysis of the electronic structure shows the presence of nodal points that resemble Dirac nodes for all cases, which leads to the possibility of the realization of magnetic Dirac materials.
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| 9. |
- Meshkian, Rahele, et al.
(författare)
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Theoretical stability, thin film synthesis and transport properties of the Mon+1GaCn MAX phase
- 2015
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley. - 1862-6254 .- 1862-6270. ; 9:3, s. 197-201
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Tidskriftsartikel (refereegranskat)abstract
- The phase stability of Mon +1GaCn has been investigated using ab-initio calculations. The results indicate stability for the Mo2GaC phase only, with a formation enthalpy of 0.4 meV per atom. Subsequent thin film synthesis of Mo2GaC was performed through magnetron sputtering from elemental targets onto Al2O3 [0001], 6H-SiC [0001] and MgO [111] substrates within the temperature range of 500 degrees C and 750 degrees C. High structural quality films were obtained for synthesis on MgO [111] substrates at 590 degrees C. Evaluation of transport properties showed a superconducting behavior with a critical temperature of approximately 7 K, reducing upon the application of an external magnetic field. The results point towards the first superconducting MAX phase in thin film form.
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| 10. |
- Nguyen, Son Tien, et al.
(författare)
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Shallow donor in natural MoS2
- 2015
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley. - 1862-6254 .- 1862-6270. ; 9:12, s. 707-710
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Tidskriftsartikel (refereegranskat)abstract
- Using electron paramagnetic resonance and density functional theory calculations, we show that the shallow donor responsible for the n-type conductivity in natural MoS2 is rhenium (Re) with a typical concentration in the low 1017 cm–3 range and the g -values: g|| = 2.0274 and g⊥ = 2.2642. In bulk MoS2, the valley–orbit (VO) splitting and ionization energy of the Re shallow donor are determined to be ∼3 meV and ∼27 meV, respectively. Calculations show that the VO splitting of Re approaches the value in bulk if the number of MoS2 layers is larger than four and increases to 97.9 meV in a monolayer.
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| 11. |
- Pournaghavi, Nezhat, et al.
(författare)
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Quantum Transport by Spin‐Polarized Edge States in Graphene Nanoribbons in the Quantum Spin Hall and Quantum Anomalous Hall Regimes
- 2018
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : Wiley-Blackwell. - 1862-6254 .- 1862-6270. ; 12:11, Special Issue
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Tidskriftsartikel (refereegranskat)abstract
- Using the non-equilibrium Green’s function method and the Keldysh formalism, we study the effects of spin–orbit interactions and time-reversal symmetry breaking exchange fields on non-equilibrium quantum transport in graphene armchair nanoribbons. We identify signatures of the quantum spin Hall (QSH) and the quantum anomalous Hall (QAH) phases in nonequilibrium edge transport by calculating the spin-resolved real space charge density and local currents at the nanoribbon edges. We find that the QSH phase, which is realized in a system with intrinsic spin–orbit coupling, is characterized by chiral counter-propagating local spin currents summing up to a net charge flow with opposite spin polarization at the edges. In the QAH phase, emerging in the presence of Rashba spin–orbit coupling and a ferromagnetic exchange field, two chiral edge channels with opposite spins propagate in the same direction at each edge, generating an unpolarized charge current and a quantized Hall conductance . Increasing the intrinsic spin–orbit coupling causes a transition from the QAH to the QSH phase, evinced by characteristic changes in the non-equilibrium edge transport. In contrast, an antiferromagnetic exchange field can coexist with a QSH phase, but can never induce a QAH phase due to a symmetry that combines time-reversal and sublattice translational symmetry.
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| 12. |
- Vaqueiro-Contreras, Michelle, et al.
(författare)
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Powerful recombination centers resulting from reactions of hydrogen with carbon–oxygen defects in n-type Czochralski-grown silicon
- 2017
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Ingår i: Physica Status Solidi. Rapid Research Letters. - : John Wiley & Sons. - 1862-6254 .- 1862-6270. ; 11:8
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Tidskriftsartikel (refereegranskat)abstract
- It has been acknowledged for over 50 years that treatments with hydrogen can improve silicon semiconductor devices. In recent years, these have been used to an advantage in silicon solar cells reducing the loss of photo-generated carriers at the silicon surface or at the silicon interface with dielectrics. However, we have found that in some types of silicon the in-diffusion of hydrogen can result in the formation of powerful recombination centers composed of carbon, oxygen, and hydrogen which reduce the carrier lifetime and ultimately the efficiency of solar cells made from such material
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| 13. |
- Zeng, Lunjie, 1983, et al.
(författare)
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The Effect of Bending Deformation on Charge Transport and Electron Effective Mass of p-doped GaAs Nanowires
- 2019
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Ingår i: Physica Status Solidi - Rapid Research Letetrs. - : Wiley. - 1862-6254 .- 1862-6270. ; 13:8
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The crystal and electronic structure of semiconductor nanowire systems have shown sensitive response to mechanical strain, enabling novel and improved electrical, and optoelectrical properties in nanowires by strain engineering. Here, the response of current–voltage (I–V) characteristics and band structure of individual p-doped GaAs nanowires to bending deformation is studied by in situ electron microscopy combined with theoretical simulations. The I–V characteristics of the nanowire change from linear to nonlinear as bending deformation is applied. The nonlinearity increases with strain. As opposed to the case of uniaxial strain in GaAs, the bending deformation does not give rise to a change in the band gap of GaAs nanowire according to in situ electron energy loss spectroscopy (EELS) measurements. Instead, the response to bending deformation can be explained by strain induced valence band shift, which results in an energy barrier for charge carrier transport along the nanowire. Moreover, the electron effective mass decreases as the strain changes from compressive to tensile across the GaAs nanowire in the bent region. Results from this study shed light on the complex interplay between lattice strain, band structure, and charge transport in semiconductor nanomaterials.
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| 14. |
- Broch, K., et al.
(författare)
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Time-resolved photoluminescence spectroscopy of charge transfer states in blends of pentacene and perfluoropentacene
- 2017
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Ingår i: Physica Status Solidi - Rapid Research Letters. - : Wiley. - 1862-6254. ; 11:7
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Tidskriftsartikel (refereegranskat)abstract
- Charge transfer states in blends of organic semiconductors have significant importance for the functioning of organic optoelectronic devices, but are also interesting from the perspective of fundamental research as many of their properties as well as their influence on the photophysics of the material are not yet completely understood. We report on a time-resolved photoluminescence study of the photophysics of the charge transfer state in the prototypical donor–acceptor system pentacene mixed with its perfluorinated counterpart. We find indications for the existence of two distinct charge-transfer states, one of them formed in the bulk of the mixed phase, the other one formed at the interface to phase-separated pentacene domains. We discuss the implications of the difference in temperature dependence of the emission intensity and the lifetime observed for these charge transfer states.
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