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Träfflista för sökning "L773:1862 6300 srt2:(2010-2014)"

Sökning: L773:1862 6300 > (2010-2014)

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1.
  • Amin, Gul, et al. (författare)
  • Current-transport studies and trap extraction of hydrothermally grown ZnO nanotubes using gold Schottky diode
  • 2010
  • Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : WILEY-V C H VERLAG GMBH, PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY. - 1862-6300. ; 207:3, s. 748-752
  • Tidskriftsartikel (refereegranskat)abstract
    • High-quality zinc oxide (ZnO) nanotubes (NTs) were grown by the hydrothermal technique on n-Si substrate. The room temperature (RT) current-transport mechanisms of Au Schottky diodes fabricated from ZnO NTs and nanorods (NRs) reference samples have been studied and compared. The tunneling mechanisms via deep-level states was found to be the main conduction process at low applied voltage but at the trap-filled limit voltage (V-TFL) all traps were filled and the space-charge-limited current conduction was the dominating current-transport mechanism. The deep-level trap energy and the trap concentration for; the NTs were obtained as similar to 0.27 eV and 2.1 x 10(16) cm(-3), respectively. The same parameters were also extracted for the ZnO NRs The deep-level states observed crossponds to zinc interstitials (Zn-i), which are responsible for the violet emission.
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2.
  • Bruhn, Benjamin, et al. (författare)
  • Fabricating single silicon quantum rods for repeatable single dot photoluminescence measurements
  • 2011
  • Ingår i: Physica Status Solidi A-applications and materials science. - Malden : Wiley-VCH Verlagsgesellschaft. - 1862-6319. ; 208:3, s. 631-634
  • Tidskriftsartikel (refereegranskat)abstract
    • A fabrication method for a matrix pattern of laterally separated silicon quantum rods was developed, consisting of a three-step recipe utilizing electron beam lithography (EBL), reactive ion etching (RIE), and oxidation. Photoluminescence (PL) measurements -images, spectra, and blinking-verified that the presented method results in a high number of luminescing single silicon quantum rods in well defined positions on the sample. These are suitable for single dot spectroscopy and repeatable measurements, even using different measurement methods and instruments. [GRAPHICS] Colorized scanning electron microscope images of undulating silicon nanowalls for controlled single quantum rod fabrication.
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3.
  • Buniatyan, V. V., et al. (författare)
  • pH-sensitive properties of barium strontium titanate (BST) thin films prepared by pulsed laser deposition technique
  • 2010
  • Ingår i: Physica Status Solidi (A) Applications and Materials Science. - : Wiley. - 1862-6319 .- 1862-6300. ; 207:4, s. 824-830
  • Tidskriftsartikel (refereegranskat)abstract
    • pH sensitive properties of barium strontium titianate (BST) high k thin films as alternative gate material for field-effect capacitive (bio-) chemical sensors based on an electrolyte-insulator semiconductor system have been investigated. The BST films of different composition (Ba0.3Sr0.69TiO3, Ba0.25Sr0.75TiO3 and MG doped Ba0.8Sr0.2Mg0.1Ti0.9O3 were deposited by pulsed laser deposition technique from targets farbicated by self-propagating high-temperatures synthesis. The realised sensors have been electrochemically characterised by means of impedance-spectroscopy, capacitance-voltage and constant-capacitance method. The sensors possess a Nernstian-like pH sensitivity in the concentration range between pH 3 and 11 with a response time of 5-10 s. An equivalent circuit model for the BST-based capacitive field-effect sensor is discussed.(C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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4.
  • Carvalho, Alexandra, et al. (författare)
  • Light induced degradation in B doped Cz-Si solar cells
  • 2012
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:10, s. 1894-1897
  • Tidskriftsartikel (refereegranskat)abstract
    • We analyse the formation energy of interstitial boron (Bi) and the properties of the defect resulting from its association with an oxygen dimer (BiO2i) to evaluate the possibility that it may be the slow-forming centre responsible for the light-induced degradation of B-doped Si solar cells. However, we find that the formation energy of Bi is too high, and therefore its concentration is negligible. Moreover, we find that the lowest energy form of BiO2i is a shallow donor, and the deep donor form is high in energy. Lowest energy structure of the BiO2i defect.
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5.
  • Carvalho, Alexandra, et al. (författare)
  • P-doping of Si nanoparticles : the effect of oxidation
  • 2012
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:10, s. 1847-1850
  • Tidskriftsartikel (refereegranskat)abstract
    • The radial dependence of the formation energy of substitutional phosphorus in silicon nanoparticles covered by an amorphous oxide shell is analysed using local density functional theory calculations. It is found that P+ is more stable at the silicon core. This explains the experimental observation of segregation of phosphorus to the Si-rich regions in a material consisting of Si nanocrystals embedded in a SiO2 matrix [Perego et al., Nanotechnology 21, 025602 (2010)]. Formation energy of positively charged substitutional phosphorus in a 1.5 nm diameter Si nanoparticle covered by a ∼2 nm-thick amorphous SiO2 shell, as a function of its distance to the centre.
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6.
  • Chey, Chan Oeurn, et al. (författare)
  • Fast synthesis, morphology transformation, structural and optical properties of ZnO nanorods grown by seed-free hydrothermal method
  • 2014
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 211:11, s. 2611-2615
  • Tidskriftsartikel (refereegranskat)abstract
    • A fast and low cost seed-free hydrothermal synthesis method to synthesize zinc oxide (ZnO) nanorods with controllable morphology, size and structure has been developed. Ammonia is used to react with water to tailor the ammonium hydroxide concentration, which provides a continuous source of OH− for hydrolysis and precipitation of the final products. Hence, allowing ZnO nanorods to growth on large areas of metal (Au and Ag coated glass), p-type Si and organic flexible (PEDOT: PSS) substrates. Increasing the growth time, the morphology transforms from pencil-like to hexagonal shape rod-like morphology. Within one hour the length of the ZnO nanorods has reached almost 1 µm. The optical characteristics has shown that the grown ZnO nanorods are dominated by two emission peaks, one is in the UV range centered at 381 nm and other one with relatively high intensity appears in the visible range and centered at 630 nm. While the growth duration was increased from 2 h to 6 h, the optical band gap was observed to increase from 2.8 eV to 3.24 eV, respectively. This fast and low cost method is suitable for LEDs, UV-photodetector, sensing, photocatalytic, multifunctional devices and other optoelectronic devices, which can be fabricated on any substrates, including flexible and foldable substrates.
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7.
  • Gavagnin, Marco, et al. (författare)
  • Magnetic force microscopy study of shape engineered FEBID iron nanostructures
  • 2014
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 211:2, s. 368-374
  • Tidskriftsartikel (refereegranskat)abstract
    • The capability to control matter down to the nanoscale level in combination with the novel magnetic properties of nanomaterials have attracted increasing attention in the last few decades due to their applications in magnetic sensing, hard disc data storage and logic devices. Therefore, many efforts have been devoted to the implementation of both nanofabrication methods as well as characterization of magnetic nanoelements. In this study, Fe-based nanostructures have been synthesized on Si(100) by focused electron beam induced deposition (FEBID) utilizing iron pentacarbonyl as precursor. The so obtained nanostructures exhibit a remarkably high iron content (Fe>80at.%), expected to give rise to a ferromagnetic behaviour. For that reason, magnetic force microscopy (MFM) analyses were performed on the obtained FEBID Fe nanostructures. Moreover, object oriented micromagnetic framework (OOMMF) magnetic simulations have been executed to study the influence of the geometry on the magnetic properties of iron single-domain nanowires. FEBID is a mask-less nanofabrication method based on the injection of precursor gas molecules in proximity of the deposition area where their decomposition is locally induced by a focused electron beam.
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8.
  • Hussain, Mushtaque, et al. (författare)
  • The improved piezoelectric properties of ZnO nanorods with oxygen plasma treatment on the single layer graphene coated polymer substrate
  • 2014
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlag. - 1862-6300 .- 1862-6319. ; 211:2, s. 455-459
  • Tidskriftsartikel (refereegranskat)abstract
    • The step towards the fabrication of nanodevices with improved performance is of high demand; therefore, in this study, oxygen plasma treated ZnO nanorods based piezoelectric nanogenerator is developed on the single layer graphene coated PET flexible polymer substrate. ZnO nanorods on the single layer graphene are grown by hydrothermal growth method and the structural study is carried out by using X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The piezoelectric properties of ZnO nanorods with and without plasma treatment were investigated by atomic force microscopy (AFM). The oxygen plasma treated sample of ZnO nanorods showed significant increase in the piezoelectric potential which could be due to the decrease in the defects levels in the ZnO and also increase in the mechanical properties of ZnO nanorods. Furthermore X-ray photoelectron spectroscopy (XPS) confirms that the filling of vacancies by oxygen in the matrix of ZnO using oxygen plasma treatment has gave an enhanced piezoelectric potential compared to the sample of ZnO nanorods not treated with oxygen plasma. In addition to XPS experiment, cathodoluminescence (CL) technique was used for the determination of defect level in the ZnO nanorods after the treatment of oxygen plasma and the obtained information supported the XPS data of oxygen plasma treatment sample by showing the decreased level of defect levels in the prepared sample. From the XPS and CL studies, it is observed that the defect level has significant influence on the piezoelectric potential of the ZnO nanostructures.
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9.
  • Kataria, S., et al. (författare)
  • Chemical vapor deposited graphene : From synthesis to applications
  • 2014
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 211:11, s. 2439-2449
  • Forskningsöversikt (refereegranskat)abstract
    • Graphene is a material with enormous potential for numerous applications. Therefore, significant efforts are dedicated to large-scale graphene production using a chemical vapor deposition (CVD) technique. In addition, research is directed at developing methods to incorporate graphene in established production technologies and process flows. In this paper, we present a brief review of available CVD methods for graphene synthesis. We also discuss scalable methods to transfer graphene onto desired substrates. Finally, we discuss potential applications that would benefit from a fully scaled, semiconductor technology compatible production process.
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10.
  • Khranovskyy, Volodymyr, et al. (författare)
  • Effect of Ag doping on the microstructure and photoluminescence of ZnO nanostructures
  • 2014
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlag. - 1862-6300 .- 1862-6319. ; 211:9, s. 2109-2114
  • Tidskriftsartikel (refereegranskat)abstract
    • ZnO nanostructures were obtained by metal-organic chemical vapor deposition via Ag catalyst-assisted growth in a temperature range of 200-500 degrees C. Growth at temperatures above 500 degrees C resulted in vertically aligned ZnO nanorods (NLs). Ag incorporation into ZnO up to 0.4 at.% promoted creation of basal plane stacking fault (BSF) defects and corrugation of the side facets of the NLs. The presence of BSFs give rise to an additional photoluminescence peak with a wavelength of similar to 386 nm, which is slightly red-shifted compared to the commonly observed NBE emission at similar to 375 nm. The observed emission was found to be specifically observed from the side facets of the NLs. It is suggested that this emission is due to a high concentration of BSFs in the ZnO as a result of an incorporation of Ag as acceptor dopant. [GRAPHICS] SEM image of an Ag-doped ZnO nanorod with corrugated side facets. The observed corrugation is accompanied by a high concentration of basal plane stacking faults.
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11.
  • Khun, Kimleang, et al. (författare)
  • Development of fast and sensitive ultraviolet photodetector using p-type NiO/n-type TiO2 heterostructures
  • 2013
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlag. - 1862-6300 .- 1862-6319. ; 210:12, s. 2720-2724
  • Tidskriftsartikel (refereegranskat)abstract
    • The fast and sensitive ultraviolet (UV) photodetector are of high demand due to their potential applications in several fields. Therefore, the present study describes the synthesis of well aligned TiO2 nanorods, NiO nanostructures and their composite hetero-structures on the fluorine doped tin oxide (FTO) glass substrate by hydrothermal method. The material characterization was performed by scanning electron microscopy and X-ray diffraction. The synthesized nanostructures are well aligned, dense, and uniform on the substrate. TiO2 nanostructures are tetragonal in shape with rutile phase. The current-voltage (I-V) characteristics were measured at room temperature. The photodiode exhibits nonlinear and rectifying behavior with high sensitivity and fast UV detection response. The enhanced photocurrent and less dark current are the attractive features of the fabricated photodiode. The observed UV response for the photodetector describes its worth and potential application in the respective fields.
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12.
  • Kishwar, S, et al. (författare)
  • Electro-optical and Cathodoluminescence properties of low temperature grown ZnO nanorods/p-GaN white light emitting diodes
  • 2010
  • Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : Wiley. - 1862-6300. ; 207:1, s. 67-72
  • Tidskriftsartikel (refereegranskat)abstract
    • Vertically aligned ZnO nanorods (NRs) with a diameter in the range of 160-200 nm were grown on p-GaN/sapphire substrates by aqueous chemical growth technique and white light emitting I diodes (LEDs) are fabricated. The properties of this LED were investigated by parameter analyzer, cathodoluminescence (CL), electroluminescence (EL), and photoluminescence (PL). The I-V characteristics of the fabricated ZnO/GaN heterojunction revealed rectifying behavior and the LED emits visible EL when bias is applied. From the CL it was confirmed that both the ZnO NRs and the p-GaN are contributing to the observed peaks. The observed EL measurements showed two emission hands centered at 450 nm and a second broad deep level defect related emission centered at 630 nm and extending from 500 rim and up to over 700 rim. Moreover, the room temperature PL spectrum of the ZnO NRs/p-GaN reveals an extra peak at the green color wavelength centered at 550 nm. Comparison of the PL, CL, and EL data suggest that the blue and near red emissions in the EL spectra are originating from Mg acceptor levels in the p-GaN and from the deep levels defects present in the ZnO NRs, respectively. The mixture of high and low energy colors, i.e., blue, green, and red, has led to the white observed luminescence.
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13.
  • Klangtakai, Pawinee, et al. (författare)
  • Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire
  • 2014
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlag. - 1862-6300 .- 1862-6319. ; 211:8, s. 1740-1744
  • Tidskriftsartikel (refereegranskat)abstract
    • The selected InGaAsN/GaAs T-shaped quantum wire (T-QWR) fabricated by metal organic vapor phase epitaxy has been investigated by microphotoluminescence (m-PL) and excitation-power-dependent mu-PL. The optical characteristics of one-dimensional structure were taken at low-temperature (4 K) and room temperature (RT) to clarify the intersection of two familiar quantum wells (QWs) in the [001] and [110] directions, named QW1 and QW2, respectively. For the excitation-power-dependent measurement, the intensity of the excitation source was used in the range of 0.001I(0) to I-0. The result shows that all of emissions related to QW1 and QWR peaks have a nonsymmetric line shape as evidenced by the tailing on the lower-energy side. All peaks shift to higher-energy side (blueshift) with the increase of the excitation power intensity. The blueshift and the low-energy tailing of PL peaks are attributed to the alloying effect. However, the emission peak related to QWR region shows a larger blueshift rate than that of QW1 on increasing of the excitation power intensity. This is an anomalous characteristic for the low-dimensional structure, affected by the large fluctuation state in the QWR region. This fluctuation state is combined of both edges of QWs (QW1 and QW2).
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14.
  • Maccaferri, Nicolò, et al. (författare)
  • Effects of a non-absorbing substrate on the magneto-optical Kerr response of plasmonic ferromagnetic nanodisks
  • 2014
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 211:5, s. 1067-1075
  • Tidskriftsartikel (refereegranskat)abstract
    • Magnetoplasmonics is an emerging field of intense research on materials combining magnetic and plasmonic functionalities. The novel optical and magneto-optical (MO) properties displayed by these materials could allow the design of a new class of magnetically controllable optical nano-devices. In this work, we investigate the effects of a non-absorbing (insulating) substrate on the MO activity of pure ferromagnetic disk-shaped nanostructures supporting localized plasmon resonances. We show that the red-shift of the localized plasmon resonance, related to the modification of the localization of the electromagnetic field due to the substrate, is not the only effect that the substrate has on the MO response. We demonstrate that the reflectivity of the substrate itself plays a key role in determining the MO response of the system. We discuss why it is so and provide a description of the modeling tools suitable to take into account both effects. Understanding the role of the substrate will permit a more aware design of magnetoplasmonic nanostructured devices for future biotechnological and optoelectronic applications. [GRAPHICS] Ferromagnetic nickel nanodisk in vacuum (left) and on a non-absorbing substrate (right), illuminated by linearly polarized light. The polarization of the reflected field is changed in the first case due to a combination of intrinsic magneto-optical properties and the nanoconfinement of the material. In the second case, the polarization of the reflected light is affected also by the presence of the substrate.
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15.
  • Mickevicius, J., et al. (författare)
  • Photoluminescence dynamics of AlGaN quantum wells with built-in electric fields and localized states
  • 2010
  • Ingår i: Physica Status Solidi (A) Applications and Materials. - : Wiley. - 1862-6300. ; 207:2, s. 423-427
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on photoluminescence (PL) studies of AlGaN/AlGaN multiple quantum well (MQW) structures with well widths spanning from 1.65 to 5.0 nm under various excitations and temperatures. The samples were fabricated by migration-enhanced metal-organic chemical vapor deposition technique (MEMOCVD (R)). Screening of the built-in electric field by photogenerated carriers reduced quantum-confined Stark effect (QCSE). This is confirmed by solving the Poisson and Schrodinger equations for AlGaN-based quantum wells (QWs) under study. Analysis of the PL internal quantum efficiency under different excitations in MQWs with different widths shows strong influence of the carrier localization on the radiative properties of MQWs.
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16.
  • Pehlivan, Esat, et al. (författare)
  • Ageing of electrochromic WO3 coatings characterized by electrochemical impedance spectroscopy
  • 2010
  • Ingår i: Physica status solidi. A, Applied research. - : Wiley. - 0031-8965 .- 1521-396X. ; 207:7, s. 1772-1776
  • Tidskriftsartikel (refereegranskat)abstract
    • We have developed a method for characterization of ageing of electrochromic materials by electrochemical impedance spectroscopy (EIS). Electrochromic WO3 thin films have been electrochemically cycled in propionic acid electrolyte and probed by EIS and optical measurements. A very small amount of optical degradation was observed in both the bleached and coloured states. The samples exhibited a few hundred times higher impedance in the bleached state than in the coloured state. It was observed that, in the bleached state, impedance values at low frequencies increased significantly with increasing number of cycles.
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17.
  • Pinto, H., et al. (författare)
  • On the diffusion of NV defects in diamond
  • 2012
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:9, s. 1765-1768
  • Tidskriftsartikel (refereegranskat)abstract
    • Besides their importance for quantum information processing, NV defects are crucial agents for the diffusion and aggregation of nitrogen in diamond. In the absence of transition metals, it is thought that the first stage of nitrogen aggregation, where close neighbour nitrogen pairs are formed, is mediated by NV defects. Here we use density functional theory to explore the barriers to NV diffusion. We conclude that the barrier is around 5 eV when there is a ready source of vacancies and that this barrier is weakly dependent on pressure.
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18.
  • Pinto, H., et al. (författare)
  • Theory of the surface effects on the luminescence of the NV(-) defect in nanodiamond
  • 2011
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 208:9, s. 2045-2050
  • Tidskriftsartikel (refereegranskat)abstract
    • A vacancy with one of the carbon neighbours replaced by a nitrogen atom in diamond (the NV centre) is a defect of particular interest due to its many potential applications. In the negatively charged state, the defect is paramagnetic with spin 1 and under optical excitation it exhibits an intense luminescence with a zero-phonon line at 1.945eV. This fluorescence is found in nanodiamonds even as small as 5nm and an important question is the effect of the surface of the nanodiamond on the optical emission of NV-.Density functional calculations are used in this work to investigate the effect of the bare (001) and (001)-OH diamond surfaces on the electronic structure of NV-. We show that the (001)-OH diamond surface has the minimum interaction with the defect and is the ideal terminating surface of nanodiamonds, while the bare (001) diamond surface has a strong effect on broadening the emission.
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19.
  • Rinio, Markus, 1967-, et al. (författare)
  • Recombination in ingot cast siliconsolar cells
  • 2011
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 208:4, s. 760-768
  • Tidskriftsartikel (refereegranskat)abstract
    • Minority carrier recombination is studied in multicrystalline ingot cast silicon solar cells. The normalized recombination strength G of dislocations is obtained by correlating topogramsof the internal quantum efficiency (IQE) with those of the dislocation densityr.G is obtained by fitting an extended theory of Donolato to the experimental data. The measured G-values vary significantly between adjacent dislocation clusters and correlate with the spatial pattern of the dislocations. All G-values are strongly dependent on the parameters of the solar cell process. The influence of phosphorus diffusion and hydrogenation is shown. After solidification of the silicon, impurities from the crucible enter the ingot and deteriorate its border regions during cooling to room temperature. These deteriorated border regions can be significantly improved byan additional low temperature anneal that is applied after phosphorus diffusion. The experiments indicate that the mechanism of the anneal is external phosphorus gettering into the emitter.
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20.
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21.
  • Tamm, Aile, et al. (författare)
  • Atomic layer deposition of ZrO2 for graphene-based multilayer structures: In situ and ex situ characterization of growth process
  • 2014
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlag. - 1862-6300 .- 1862-6319. ; 211:2, s. 397-402
  • Tidskriftsartikel (refereegranskat)abstract
    • Real time monitoring of atomic layer deposition by quartz crystal microbalance (QCM) was used to follow the growth of ZrO2 thin films on graphene. The films were grown from ZrCl4 and H2O on graphene prepared by chemical vapor deposition method on 100-nm thick nickel film or on Cu-foil and transferred onto QCM sensor. The deposition was performed at a substrate temperature of 190 degrees C. The growth of the dielectric film on graphene was significantly retarded compared to the process carried out on QCM without graphene. After the deposition of dielectric films, the basic structure of graphene was retained.
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22.
  • Tengdelius, Lina, et al. (författare)
  • Magnetron sputtering of epitaxial ZrB2 thin films on 4H-SiC(0001) and Si(111)
  • 2014
  • Ingår i: Physica Status Solidi (a). - : John Wiley & Sons. - 1862-6319 .- 1862-6300. ; 211:3, s. 636-640
  • Tidskriftsartikel (refereegranskat)abstract
    • Epitaxial ZrB2 thin films were deposited at a temperature of 900 °C on 4H-SiC(0001) and Si(111) substrates by magnetron sputtering from a ZrB2 source at high rate ~80 nm/min. The films were analyzed by thin film X-ray diffraction including pole figure measurements and reciprocal space mapping as well as high resolution electron microscopy.
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23.
  • Tiwari, Amit K., et al. (författare)
  • Bromine functionalisation of diamond : an ab initio study
  • 2012
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:9, s. 1703-1708
  • Tidskriftsartikel (refereegranskat)abstract
    • Immobilisation of organic molecules on diamond surfaces is of great interest for biomedical applications. While H, F and Cl terminations, as a linker, have been studied extensively, the bromination of diamond is not fully understood. We have performed ab initio simulations to investigate the chemisorption of Br onto C- and H-terminated diamond (100) surfaces. We find that due to steric interaction, 100% surface coverage of Br is not stable, however, surface coverage up to around 50% is theoretically achievable. The chemisorption energies corresponding to lower surface coverages of Br are found comparable to those of hydrogen. Partial surface coverages (25 and 50%) of Br on C-terminated diamond exhibit nearly equal positive electron affinities of 0.45 and 0.52 eV, respectively. Addition of hydrogen reduces the electron affinity and for 25% of Br on an otherwise H-terminated surface, a negative electron affinity of 0.57 eV is calculated.
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24.
  • Tiwari, Amit K., et al. (författare)
  • Effect of different surface coverages of transition metals on the electronic and structural properties of diamond
  • 2012
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:9, s. 1697-1702
  • Tidskriftsartikel (refereegranskat)abstract
    • The presence of adsorbate species on diamond surfaces, even in relatively small concentrations, strongly influences electrical, chemical and structural properties. Despite the technological significance, coverage of diamond by transition metals has received relatively little attention. In this paper, we present the results of density functional calculations examining up to a mono-layer of transition metals on the (001) diamond surface. We find that addition of carbide forming species, such as Ti, results in significantly higher adsorption energies at all surface coverages relative to non-carbide forming species. For monolayer coverage by Cu, and sub-monolayer coverage by Ti, we find a negative electron affinity. We propose that based upon the electron affinities and binding energies, metal-terminated (001) diamond surfaces are promising candidates for electron emission device applications.
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25.
  • Tiwari, Amit K., et al. (författare)
  • Thermodynamic stability and electronic properties of F- and Cl-terminated diamond
  • 2012
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 209:9, s. 1709-1714
  • Tidskriftsartikel (refereegranskat)abstract
    • The chemical termination of diamond has important consequences for its electrical and chemical properties. Despite the impressive potential for various scientific and technological applications, halogen termination of diamond is not fully understood. We find using first principle atomistic simulation that 100% fluorinated diamond (100) surface exhibit a chemically stable positive electron affinity of 2.13 eV, whereas 100% chlorination is energetically unfavourable. The positive electron affinity of halogenated diamond generally increases with increasing surface coverage. For mixed halogen and hydrogen termination, a wide range of negative and positive electron affinities can be achieved theoretically by varying the relative concentrations of adsorbed species.
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26.
  • Uddin, A., et al. (författare)
  • Initial rise of transient electroluminescence in doped Alq(3) films
  • 2010
  • Ingår i: Physica Status Solidi (A) Applications and Materials Science. - : Wiley. - 1862-6319 .- 1862-6300. ; 207:10, s. 2334-2338
  • Tidskriftsartikel (refereegranskat)abstract
    • The doping effect on initial rise of transient electroluminescence (EL) in organic light emitting diodes (OLEDs) is investigated. The dopants red light emitter 5,6,11,12-tetraphenylnaphthacene (Rb) and 4-(diacynomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyan (DCM), and yellow light emitter 3-(2'-benzothiazolyl)-7-diethylaminocoumarin (C-6) were used in green light emitter tris-(8-hydroxyquinoline) aluminum (Alq(3)) film with various concentrations from 0.5 to 24wt%. The increase of EL delay time and the slower rise of EL saturation were observed with doping concentrations. The values of EL delay time was found from 0.78 to 1.86 mu s in doped OLED compared to 0.74 mu s in pure Alq(3) device. The EL saturation time was found from 1.2 to 2.8 mu s for different doping concentration. We have also estimated the carrier mobility from the transient EL measurements. The charge-carrier mobility was found as 0.5-1.2 x 10(-5) cm(2) V-1 s(-1) in doped Alq(3) films.
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27.
  • Wang, Jianpu, et al. (författare)
  • Memristive devices based on solution-processed ZnO nanocrystals
  • 2010
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlag. - 1862-6300 .- 1862-6319. ; 207:2, s. 484-487
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a memristive device fabricated using low-cost solution-processed colloidal ZnO nanocrystals. Taking advantage of the large surface area of ZnO nanocrystals, we find that an oxygen depletion region can be naturally formed by chemical interaction between an Al electrode and the ZnO nanocrystals. Strong electrical hysteresis, history-dependent conductance, and sweep-rate-dependent current-voltage (J-V) curves are observed in our devices. The resistance can be modified between similar to 1 and similar to 10(4) Omega cm(2), which is promising for application in non-volatile memory devices and in low-cost organic circuits, where typical feature sizes are about 10-100 mu m and the circuit current is low. (C) 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim
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28.
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29.
  • Yousuf Soomro, Muhammad, et al. (författare)
  • Hybrid organic zinc oxide white-light-emitting diodes on disposable paper substrate
  • 2013
  • Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley-VCH Verlag. - 1862-6300 .- 1862-6319. ; 210:8, s. 1600-1605
  • Tidskriftsartikel (refereegranskat)abstract
    • ZnO-organic hybrid white-light-emitting diodes (WLEDs) were demonstrated on a paper substrate. The configuration used for ZnO-organic hybrid WLEDs consists a layer of poly (9,9)-(dioctylfluorene) (PFO) on poly (3,4-ethylenedioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) on n-type ZnO nanorods grown by a low-temperature chemical aqueous method on paper substrate. Room temperature photoluminescence, electroluminescence, and cathodoluminescence (CL) spectra reveal a broad visible region covering the range from 420 to 800nm. By using room temperature-CL, we got luminescence information, especially to verify the origin of specific emissions, the internal absorption of the ultraviolet and the spatial distribution of radiative defects. It was observed that the visible wavelength range depends on the penetration depth of the excitation. This suggests that the concentration of deep levels responsible for the visible luminescence is at the sample surface to a depth of 1-2 mu m when using an accelerating voltage up to 20-30kV. The results indicate that demonstration of WLEDs on paper substrate with reasonable electrical performance greatly influences the reduction of substrate cost, furthermore, this may open way to fabricate optoelectronics devices on disposable substrates for large-area applications.
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30.
  • Chao, Yimin, et al. (författare)
  • Soft X-ray induced oxidation on acrylic acid grafted luminescent silicon quantum dots in ultrahigh vacuum
  • 2011
  • Ingår i: Physica Status Solidi. A: Applications and Materials Science. - : Wiley. - 1862-6300. ; 208:10, s. 2424-2429
  • Tidskriftsartikel (refereegranskat)abstract
    • Water soluble acrylic acid grafted luminescent silicon quantum dots (Si-QDs) were prepared by a simplified method. The resulting Si-QDs dissolved in water and showed stable strong luminescence with peaks at 436 and 604 nm. X-ray photoelectron spectroscopy (XPS) was employed to examine the surface electronic states after the synthesis. The co-existence of the Si2p and C1s core levels infers that the acrylic acid has been successfully grafted on the surface of silicon quantum dots. To fit the Si2p spectrum, four components were needed at 99.45, 100.28, 102.21 and 103.24 eV. The first component at 99.45 eV (I) was assigned to Si-Si within the silicon core of the Si-QDs. The second component at 100.28 eV (II) was from Si-C. The third at 102.21 eV (III) was a sub-oxide state and the fourth at 103.24 eV (IV) was from SiO2 at Si-QDs surface. With an increase in exposure to soft X-ray photons, the intensity ratio of the two peaks within the Si2p region A and B increased from 0.5 to 1.4 while the peak A intensity decreased, and eventually a steady state was reached. This observation is explained in terms of photon-induced oxidation taking place within the surface dangling bonds. As the PL profile for Si-QDs is influenced by the degree of oxidation within the nanocrystal structure, the inducement of oxidation by soft X-rays will play a role in the range of potential applications where such materials could be used - especially within biomedical labelling. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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31.
  • Darakchieva, Vanya, et al. (författare)
  • Free electron properties and hydrogen in InN grown by MOVPE
  • 2011
  • Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : WILEY-BLACKWELL, COMMERCE PLACE, 350 MAIN ST, MALDEN 02148, MA USA. - 1862-6300. ; 208:5, s. 1179-1182
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work we present a comprehensive study on the hydrogen impurities, free electron, and structural properties of MOVPE InN films with state-of-the-art quality. We find a correlation between the decrease of free electron concentration and the reduction of bulk hydrogen in the films upon thermal annealing, while no changes in the dislocation densities and strain are observed. Our results suggest that hydrogen is a major source for the unintentional n-type doping in MOVPE InN.
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32.
  • Darakchieva, Vanya, et al. (författare)
  • Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
  • 2012
  • Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : Wiley-VCH Verlag Berlin. - 1862-6300. ; 209:1, s. 91-94
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counter-parts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed.
  •  
33.
  • Dou, Maofeng, et al. (författare)
  • Band gap reduction and dielectric function of Ga1-xZnxN1-xOx and In1-xZnxN1-xOx alloys
  • 2012
  • Ingår i: Physica Status Solidi. A: Applications and Materials Science (Print). - : Wiley. - 1862-6300. ; 209:1, s. 75-78
  • Tidskriftsartikel (refereegranskat)abstract
    • The band gap reductions, dielectric functions and absorption coefficients of the Ga1-xZnxN1-xOx and In1-xZnxN1-xOx (x=0.00, 0.25, 0.50, 0.75, and 1.00) alloys were calculated, employing the partial self-consistent GW approximation. As a comparison, the local density approximation (LDA) and the Heyd-Scueria-Ernzerhof (HSE) hybrid functional were also used to calculate the gap reduction. Both Ga1-xZnxN1-xOx and In1-xZnxN1-xOx alloys show strong band gap bowing. As a result, the band gap energy in Ga1-xZnxN1-xOx is reduced by E-g(GaN) E-g (Ga1-xZnxN1-xOx) - 1.61, 2.01 and 1.91 eV for x=0.25, 0.50, and 0.75, respectively. This allows optoelectronic devices based on GaN and ZnO with more efficient absorption or emission of light in the visible light range. The calculated dielectric functions and absorption spectra demonstrate that the band gap reduction enhances the optical absorption around the 2.5 eV region. Interestingly, the In1-xZnxN1-xOx alloy with x=0.25 has the large optical absorption coefficient in the energy region 0.69-6.0 eV, and the alloy has very good absorption at 2-3 eV.
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34.
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35.
  • Jmerik, V.N., et al. (författare)
  • Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3
  • 2010
  • Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : WILEY-V C H VERLAG GMBH. - 1862-6300. ; 207:6, s. 1313-1317
  • Tidskriftsartikel (refereegranskat)abstract
    • We have demonstrated optically pumped room-temperature pulse lasing at 300.4 nm from an AlGaN-based multiple-quantum-well (MQW) structure grown by plasma-assisted molecular beam epitaxy on a c-sapphire substrate. The lasing was achieved at the threshold peak power of similar to 12 MW/cm(2). The MQW structure involved AlGaN/AlN short-period super-lattices to decrease the threading dislocation densities from 10(11) down to 10(9)-10(10) cm(-2). Studies of time-resolved photoluminescence (TRPL) spectra and cw PL temperature dependences (10-300K) of different MQW structures, as well as numerical calculations of the optical gain and confinement in the laser structure allowed us to conclude about the optimum design of AlGaN-based MQW structures for the lower threshold UV lasing.
  •  
36.
  • Kakanakova-Georgieva, Anelia, et al. (författare)
  • Carbon-tuned cathodoluminescence of semi-insulating GaN
  • 2011
  • Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : Wiley-VCH Verlag Berlin. - 1862-6300. ; 208:9, s. 2182-2185
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the cathodoluminescence (CL) of nominally undoped semi-insulating GaN layers grown by hot-wall metal-organic chemical vapor deposition (MOCVD) at a threefold increase of the growth rate limited by the TMGa flow. The growth kinetics is such, that C is the only background impurity in the layers with controllably increasing concentration from 5 x 10(16) to 6 x 10(17) cm(-3), while other background impurities, H. O and Si, are essentially at the SIMS detection levels. The hot-wall MOCVD is not an ordinary approach to GaN growth process and this study corroborates a more perceptive outlook on the C incorporation in GaN and any potential C-incorporation-mediated luminescence, including the observed here blue luminescence (BL) at similar to 417 nm, and the yellow luminescence (YL) with shifting peak position towards shorter wavelengths, similar to 555-543-525 nm.
  •  
37.
  • Kashif, M., et al. (författare)
  • Morphological, optical, and Raman characteristics of ZnO nanoflakes prepared via a sol-gel method
  • 2012
  • Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : Wiley-VCH Verlag Berlin. - 1862-6300. ; 209:1, s. 143-147
  • Tidskriftsartikel (refereegranskat)abstract
    • Two-dimensional (2D) ZnO nanoflakes were grown on thin aluminum layer, deposited on silicon substrate, using a sol-gel method. The surface morphologies of ZnO nanoflakes at different precursor concentrations were studied using scanning electron microscopy (SEM). Combined studies of SEM, photoluminescence (PL), and Raman spectroscopy suggested that nanorods started to grow along with nanoflakes at a precursor concentration of 0.05 M and the density of the nanorods significantly increased when the concentration was raised to 0.075 M. Both the UV-luminescence and Raman spectra were intensified and redshifted with the increment of precursor concentration. Spectral intensification suggests improvement in crystal qualities and better optical properties of the fabricated ZnO nanostructures. The structural defects at lower levels of precursor were probably due to the hypoxic environment, whereas, the redshift of PL and Raman spectra was due to the local heating of ZnO nanocrystals.
  •  
38.
  • Kratzig, Andreas, et al. (författare)
  • RuS2 thin films as oxygen-evolving electrocatalyst: Highly oriented growth on single-crystal FeS2 substrate and their properties compared to polycrystalline layers
  • 2014
  • Ingår i: Physica Status Solidi. A: Applications and Materials Science. - : Wiley. - 1862-6300. ; 211:9, s. 2020-2029
  • Tidskriftsartikel (refereegranskat)abstract
    • The compound semiconductor RuS2, known as mineral laurite, has been investigated as a potential (photo) electrochemically active anode material for the oxygen evolution in the process of (photo) electrolytic water splitting. The contribution describes for the first time the preparation of RuS2 thin films deposited on (100)- and (111)-oriented FeS2 (pyrite) substrates using reactive magnetron sputtering. The epitaxial growth of 60 nm thick films was confirmed by X-ray diffractometry, texture measurements, and the evaluation of cross section transmission electron micrographs. By optical reflectance spectroscopy and Seebeck coefficient measurements a direct band gap of 1.9 eV and p-type conductivity could be determined. Due to the modest electrochemical stability of the epitaxial layers in electrochemical investigations, polycrystalline films of laurite were also deposited on Ti sheets and Si wafers. As a function of grain size, [S]:[Ru] ratio and grain orientation highest activity towards oxygen evolution was found when the conditions were fulfilled that the layer composition was close to stoichiometry and increased particle sizes showed a strong texture in the grains. Some structural and chemical properties argue for the (100) surface as catalytically active and stable layer compared to other surfaces. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  •  
39.
  • Monemar, Bo, et al. (författare)
  • Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
  • 2011
  • Ingår i: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. - : Wiley-VCH Verlag Berlin. - 1862-6300. ; 208:7, s. 1532-1534
  • Tidskriftsartikel (refereegranskat)abstract
    • Photoluminescence (PL) properties are reported for a set of m-plane GaN films with Mg doping varied from mid 10(18) cm(-3) to above 10(20) cm(-3). The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound exciton (BE) spectra observed below 50K, as well as the broader donor-acceptor pair (DAP) PL bands at 2.9-3.3eV give evidence of several Mg related acceptors, similar to the case of c-plane GaN. The dependece of the BE spectra on excitation intensity as well as the transient decay behaviour demonstrate acoustic phonon assisted transfer between the acceptor BE states. The lower energy donor-acceptor pair spectra suggest the presence of deep acceptors, in addition to the two main shallower ones at about 0.23eV Similar spectra from Mg-doped GaN nanowires (NWs) grown by MOCVD are also briefly disussed. (C) 2011 WILEY-VCH Verlag Gmbh andamp; Co. KGaA, Weinheim
  •  
40.
  • Perraud, Simon, et al. (författare)
  • Silicon nanocrystals : Novel synthesis routes for photovoltaic applications
  • 2013
  • Ingår i: Physica status solidi. A, Applied research. - : Wiley. - 0031-8965 .- 1521-396X. ; 210:4, s. 649-657
  • Tidskriftsartikel (refereegranskat)abstract
    • Novel processes were developed for fabricating silicon nanocrystals and nanocomposite materials which could be used as absorbers in third generation photovoltaic devices. A conventional high-temperature annealing technique was studied as a reference process, with some new insights in crystallisation mechanisms. Innovative methods for silicon nanocrystal synthesis at much lower temperature were demonstrated, namely chemical vapour deposition (CVD), physical vapour deposition (PVD) and aerosol-assisted CVD. Besides the advantage of low substrate temperature, these new techniques allow to fabricate silicon nanocrystals embedded in wide bandgap semiconductor host matrices, with a high density and a narrow size dispersion.
  •  
41.
  • Wu, Yan, et al. (författare)
  • Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique
  • 2011
  • Ingår i: Physica Status Solidi (A) Applications and Materials. - : Wiley. - 1862-6300. ; 208:1, s. 206-209
  • Tidskriftsartikel (refereegranskat)abstract
    • This indium-doped zinc oxide field effect transistor (IZO-FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO-FETs exhibit a saturation current level of about 10 mu A, an incremental mobility as high as 8 cm(2) V-1 s(-1), and a current on/off ratio of 10(4)-10(5). When illuminated by 363 nm, 1.7 mW cm(-2) UV light, the IZO-FET displays a photocurrent of 2 mA, and a darkness current of similar to 20 nA at an optimized gate voltage of -2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO-FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector.
  •  
42.
  • Zhang, Renyun, et al. (författare)
  • Size and concentration controlled growth of porous gold nanofilm
  • 2012
  • Ingår i: Physica status solidi. A, Applied research. - : Wiley. - 0031-8965 .- 1521-396X. ; 209:3, s. 519-523
  • Tidskriftsartikel (refereegranskat)abstract
    • At an air/water interface, diffusion-limited aggregation (DLA) of gold nanoparticles can form porous gold thin films. This porous film roughly consists of a network of irregular nanowires. For this air–water system, external parameters like temperature are well studied, while the influence of internal parameters, e.g., the size and concentration of the nanoparticles, have not been studied in detail. Here, we report on the growth of porous gold nanofilms for different nanoparticle sizes and concentrations to get a relationship between the morphology of the films and the internal parameters. The gold nanoparticles were synthesized by reducing HAuCl4 using sodium citrate. Transmission electron microscopy (TEM) characterizationshowed a linear relation between the formed gold nanowires and the concentration of HAuCl4 if the concentration of sodium citrate is unchanged. A linear dependency was also found between the wire diameter and the gold nanoparticle concen- tration, and between the wire diameter and volume fraction of the nanoparticles. The electrical resistance of the films was measured, showing a linear relation between resistance and the inverse of the cross-sectional area of the nanowires. This study shows the relation between the morphology and resistance of the grown porous films and the controllable internal parameters that will be useful in further exploration of this thin-film growth method.
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