| 1. |
- Okujima, Masahiro, et al.
(författare)
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Molecular beam epitaxial growth of GaAs/GaNAsBi core-multishell nanowires
- 2021
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Ingår i: APPLIED PHYSICS EXPRESS. - : IOP Publishing Ltd. - 1882-0778 .- 1882-0786. ; 14:11
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Tidskriftsartikel (refereegranskat)abstract
- GaAs/GaNAsBi/GaAs core-multishell nanowires were grown using molecular beam epitaxy on Si(111) substrates. The formation of the 20 nm wide GaNAsBi shell with a regular hexagonal structure was observed. The shell is estimated to contain approximately 1.5% N and 2.6% Bi and has a compressive lattice mismatch of less than 0.2% with GaAs layers. The strain mediation by the introduction of both N and Bi suppresses the crystalline deformation, resulting in the clear formation of the GaNAsBi shell. Thus, we obtained room-temperature photoluminescence with the maximum position at approximately 1300 nm from the GaAs/GaNAsBi/GaAs core-multishell nanowires.
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| 2. |
- Tsutsumi, Rikuo, et al.
(författare)
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Outermost AlGaO(x)native oxide as a protection layer for GaAs/AlGaAs core-multishell nanowires
- 2020
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Ingår i: APPLIED PHYSICS EXPRESS. - : IOP PUBLISHING LTD. - 1882-0778 .- 1882-0786. ; 13:7
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Tidskriftsartikel (refereegranskat)abstract
- We propose native oxide AlGaO(x)outer protective layer for GaAs/AlGaAs core-multishell nanowires to provide yearly stable stronger optical and electrical confinement within the nanowire core. We prepared core-multishell NWs consisting of GaAs core, Al0.2Ga0.8As multi-layered barrier layer, and amorphous Al(0.9)Ga(0.1)O(x)outer shell, which was obtained simply by growing Al-rich AlGaAs and exposing the NWs to the ambient air. Photoluminescence from the NWs reveals that the Al(0.9)Ga(0.1)O(x)outer shell provides efficient optical confinement and creates a compressive strain in the interior of the NW that enhances and blueshifts the photoluminescence of the GaAs core.
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| 3. |
- Yapparov, Rinat, et al.
(författare)
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Optimization of barrier height in InGaN quantum wells for rapid interwell carrier transport and low nonradiative recombination
- 2020
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Ingår i: Applied Physics Expres. - : IOP Publishing. - 1882-0778 .- 1882-0786. ; 13:12
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Tidskriftsartikel (refereegranskat)abstract
- Rapid interwell carrier transport is a key process for a uniform carrier distribution and reduced Auger recombination in multiple quantum well (MQW) light emitting devices. In this work, the interwell transport has been studied by time-resolved photoluminescence in In0.12Ga0.88N MQWs with InxGa1-xN (x = 0 0.06) and Al0.065Ga0.935N barriers. Only for the InGaN barriers the transport is efficient. However, introduction of In into the barriers is accompanied by an increase of the nonradiative recombination at QW interfaces. Still, even with the increased Shockley-Read-Hall recombination, structures with InGaN barriers might be advantageous for high power devices because of the reduced Auger recombination.
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