| 1. |
- Falciani, Gabriele, et al.
(författare)
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A novel concept of photosynthetic soft membranes : a numerical study
- 2023
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Ingår i: DISCOVER NANO. - : Springer Nature. - 2731-9229. ; 18:9
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Tidskriftsartikel (refereegranskat)abstract
- We focus on a novel concept of photosynthetic soft membranes, possibly able to allow the conversion of solar energy and carbon dioxide (CO2) into green fuels. The considered membranes rely on self-assembled functional molecules in the form of soap films. We elaborate a multi-scale and multi-physics model to describe the relevant phenomena, investigating the expected performance of a single soft photosynthetic membrane. First, we present a macroscale continuum model, which accounts for the transport of gaseous and ionic species within the soap film, the chemical equilibria and the two involved photocatalytic half reactions of the CO2 reduction and water oxidation at the two gas-surfactant-water interfaces of the soap film. Second, we introduce a mesoscale discrete Monte Carlo model, to deepen the investigation of the structure of the functional monolayers. Finally, the morphological information obtained at the mesoscale is integrated into the continuum model in a multi-scale framework. The developed tools are then used to perform sensitivity studies in a wide range of possible experimental conditions, to provide scenarios on fuel production by such a novel approach.
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| 2. |
- Lu, Chan-Hung, et al.
(författare)
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beta-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD
- 2023
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Ingår i: DISCOVER NANO. - : SPRINGER. - 2731-9229. ; 18:1
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Tidskriftsartikel (refereegranskat)abstract
- beta-Ga2O3 thin films with both a 45 nm Si-doped conductive epilayer and unintentionally doped epilayer were grown on c-plane sapphire substrate by metalorganic chemical vapor deposition. beta-Ga2O3 based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 20 nm and 40 nm (it indicated gate depth with 70 nm and 50 nm, respective), respectively, and without said recessing process. The conductivity of beta-Ga2O3 epilayers was improved through low in situ doping using a tetraethoxysilane precursor to increase MOSFET forward current density. After recessing, MOSFET operation was transferred from depletion to enhanced mode. In this study, the maximum breakdown voltage of the recessed 40 nm transistor was 770 V. The etching depth of a recessed-gate device demonstrates its influence on device electrical performance.
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