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Träfflista för sökning "WFRF:(Österman John) srt2:(2005-2009)"

Sökning: WFRF:(Österman John) > (2005-2009)

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1.
  • Hallén, Anders., et al. (författare)
  • Annealing of Al implanted 4H silicon carbide
  • 2006
  • Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T126, s. 37-40
  • Tidskriftsartikel (refereegranskat)abstract
    • Al ions were implanted with multiple energies up to 250 keV at elevated temperatures in n-type 4H SiC epitaxial layers to reach a surface concentration of 1 x 10(20) cm(-3). These samples were then annealed at temperatures between 1500 and 1950 degrees C. A similar 4H SiC epitaxial sample was implanted by MeV Al ions to lower doses and annealed only at 200 and 400 degrees C. After annealing, cross-sections of the samples were characterized by scanning spreading resistance microscopy (SSRM). The results show that the resistivity of high-dose Al implanted samples has not reached a saturated value, even after annealing at the highest temperature. For the MeV Al implanted sample, the activation of Al has not yet started, but a substantial annealing of the implantation induced damage can be seen from the SSRM depth profiles.
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2.
  • Suchodolskis, A., et al. (författare)
  • Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
  • 2006
  • Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:2, s. 611-614
  • Tidskriftsartikel (refereegranskat)abstract
    • To obtain a better understanding of the damage annealing process and dopant defect incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high doses of Al+ ions. Cross-sections of the samples are investigated by scanning spreading resistance microscopy (SSRM) using a commercial atomic force microscopy (AFM). The defects caused by the implanted ions compensate for the doping and decrease the charge carrier mobility. This causes the resistivity to increase in the as-implanted regions. The calculated profile of implanted ions is in good agreement with the measured ones and shows a skewed Gaussian shape. Implanted samples are annealed up to 400 degrees C. Despite these low annealing temperatures we observe a clear improvement of the sample conductivity in the asimplanted region.
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  • Resultat 1-2 av 2
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tidskriftsartikel (2)
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refereegranskat (2)
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Hallén, Anders. (2)
Linnarsson, Margaret ... (2)
Österman, John (2)
Karlsson, Ulf O. (1)
Suchodolskis, Artura ... (1)
Abtin, L. (1)
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Suchodolskis, A. (1)
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Kungliga Tekniska Högskolan (2)
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Engelska (2)
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2006 (2)

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