| 1. |
- Abrashev, M. V., et al.
(författare)
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Raman spectroscopy of the charge- and orbital-ordered state in La0.5Ca0.5MnO3
- 2001
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Ingår i: Physical Review B. ; 64:14
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Tidskriftsartikel (refereegranskat)abstract
- Polarized Raman spectra from microcrystals of La0.5Ca0.5MnO3 were studied as a function of temperature, excitation photon energy, and scattering configuration. At temperatures below the transition from ferromagnetic metallic phase to antiferromagnetic insulating charge- and orbital-ordered (COO) phase, several lines appear in Raman spectra excited with photon energies (h) over bar omega (L)<2.5 eV. We argue that their appearance signals ordering and freezing of the Jahn-Teller distortions at this transition temperature into a superstructure with a doubled elementary cell. We suggest a simplified structural model based on an analysis of the normal phonon modes in the COO phase, neglecting the octahedral tilts and containing ordered Mn4+O6 (undistorted) and Mn3+O6 (Jahn-Teller distorted) octahedra. The symmetries of the experimentally observed Raman lines are determined by comparing their relative intensities to those predicted by the polarization selection rules for a finely twinned quasicubic crystal. The most intensive Raman lines are assigned to definite normal modes in close comparison with corresponding modes in COO layered manganites and undoped RMnO3 (R=La, Y).
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| 2. |
- Valcheva, E., et al.
(författare)
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Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:12, s. 6011-6016
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Tidskriftsartikel (refereegranskat)abstract
- Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the template on the strain relaxation and spatial distribution of free carriers in the overgrown GaN films. Spatially resolved cross-sectional micro-Raman spectroscopy, cathodoluminescence, and transmission electron microscopy show improved crystalline quality for growth on metalorganic chemical vapor deposited GaN templates. The highly doped and highly defective near-substrate layer composed of columnar domains, typically present in hydride vapor phase epitaxial GaN films grown directly on sapphire, is absent in the layers grown on templates. Consequently, this results in elimination of the nonuniformities of free electron distribution, a lower residual free carrier concentration (<1017 cm-3), and improved strain relaxation. © 2001 American Institute of Physics.
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| 3. |
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| 4. |
- Valcheva, E., et al.
(författare)
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Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
- 2001
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Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 82:1-3, s. 35-38
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Tidskriftsartikel (refereegranskat)abstract
- Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect. © 2001 Elsevier Science B.V.
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| 5. |
- Abrashev, M. V., et al.
(författare)
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Raman spectroscopy of CaMnO(3) : Mode assignment and relationship between Raman line intensities and structural distortions
- 2002
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Ingår i: Physical Review B Condensed Matter. - 0163-1829 .- 1095-3795. ; 65:18, s. 1-9
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Tidskriftsartikel (refereegranskat)abstract
- Polarized Raman spectra of oriented finely twinned CaMnO(3) thin films and nonpolarized Raman spectra of CaMnO(3) ceramics were studied at room temperature using several excitation laser wavelengths. The selection rules for the polarized Raman spectra, obtained from samples consisting of finely twinned orthorhombic domains, were calculated and the symmetry of all observed Raman lines was determined. The relationship between the intensity of the Raman lines and the distortions in the ABO(3) perovskites with GdFeO(3)-type structure is discussed. These distortions can be described as superposition of four simple basic distortions: two MnO(6) octahedral tilts, Jahn-Teller deformation of Mn(3+) O(6) octahedra, and shift of the A ions from their sites in the ideal perovskite. Twenty of the 24 Raman-allowed modes in the real GdFeO(3)-type structure have counterparts in only one of the four simpler structures, obtained by a single basic distortion. The assignment of the Raman lines of CaMnO(3) to definite atomic vibrations, most of them activated by a single basic distortion, was made in close comparison with the results of lattice dynamical calculations and the Raman spectra of isostructural LaMnO(3) and CaGeO(3).
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| 6. |
- Beshkova, Milena, et al.
(författare)
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Low-pressure sublimation epitaxy of AlN films - growth and characterization
- 2004
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Ingår i: Vacuum. - : Elsevier BV. - 0042-207X .- 1879-2715. ; 76, s. 143-146
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial layers of aluminum nitride have been grown at temperatures 1900-2400degreesC on 10 x 10 mm(2) 4H-SiC substrate via sublimation recondensation in an RF heated graphite furnace. The source material was polycrystalline sintered AlN. A maximum growth rate of about 100 mum/h was achieved at 2400degreesC and seed to source distance of 1 mm. The surface morphology reflects the hexagonal symmetry of the seed suggesting an epitaxial growth. This was confirmed by X-ray diffraction (XRD). The spectra showed very strong and well-defined (0002) reflection position at around 36.04degrees in symmetric Theta-2Thetascans for all samples. Micro-Raman spectroscopy reveals that the films have a wurtzite structure. It is evidenced by the appearance of the A(1) (TO) (at 601 cm(-1)) and E-2((2)) (at 651 cm(-1)) lines in the spectra. Secondary-ion mass spectroscopy (SIMS) results showed a low concentration of carbon incorporation in the AlN films. A correlation between the growth conditions and properties of the AlN layers was established.
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| 7. |
- Paskova, Tanja, et al.
(författare)
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Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
- 2001
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 230:3-4, s. 381-386
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Tidskriftsartikel (refereegranskat)abstract
- The influence of high temperature buffer layers on the structural characteristics of GaN grown by hydride vapour phase epitaxy on sapphire was investigated. Strain relaxation as well as mismatch-induced defect reduction in thick GaN layers grown on AlN buffer was microscopically identified using cathodoluminescence and micro-Raman spectroscopy in cross-section of the films. The results were correlated with photoluminescence and Hall-effect data of layers with different thicknesses. These relaxation processes were suggested to account for the specific defect distribution in the buffers revealed by high-resolution X-ray diffraction and transmission electron microscopy. © 2001 Elsevier Science B.V. All rights reserved.
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