| 1. |
|
|
| 2. |
- Klionsky, Daniel J., et al.
(författare)
-
Guidelines for the use and interpretation of assays for monitoring autophagy
- 2012
-
Ingår i: Autophagy. - : Informa UK Limited. - 1554-8635 .- 1554-8627. ; 8:4, s. 445-544
-
Forskningsöversikt (refereegranskat)abstract
- In 2008 we published the first set of guidelines for standardizing research in autophagy. Since then, research on this topic has continued to accelerate, and many new scientists have entered the field. Our knowledge base and relevant new technologies have also been expanding. Accordingly, it is important to update these guidelines for monitoring autophagy in different organisms. Various reviews have described the range of assays that have been used for this purpose. Nevertheless, there continues to be confusion regarding acceptable methods to measure autophagy, especially in multicellular eukaryotes. A key point that needs to be emphasized is that there is a difference between measurements that monitor the numbers or volume of autophagic elements (e.g., autophagosomes or autolysosomes) at any stage of the autophagic process vs. those that measure flux through the autophagy pathway (i.e., the complete process); thus, a block in macroautophagy that results in autophagosome accumulation needs to be differentiated from stimuli that result in increased autophagic activity, defined as increased autophagy induction coupled with increased delivery to, and degradation within, lysosomes (in most higher eukaryotes and some protists such as Dictyostelium) or the vacuole (in plants and fungi). In other words, it is especially important that investigators new to the field understand that the appearance of more autophagosomes does not necessarily equate with more autophagy. In fact, in many cases, autophagosomes accumulate because of a block in trafficking to lysosomes without a concomitant change in autophagosome biogenesis, whereas an increase in autolysosomes may reflect a reduction in degradative activity. Here, we present a set of guidelines for the selection and interpretation of methods for use by investigators who aim to examine macroautophagy and related processes, as well as for reviewers who need to provide realistic and reasonable critiques of papers that are focused on these processes. These guidelines are not meant to be a formulaic set of rules, because the appropriate assays depend in part on the question being asked and the system being used. In addition, we emphasize that no individual assay is guaranteed to be the most appropriate one in every situation, and we strongly recommend the use of multiple assays to monitor autophagy. In these guidelines, we consider these various methods of assessing autophagy and what information can, or cannot, be obtained from them. Finally, by discussing the merits and limits of particular autophagy assays, we hope to encourage technical innovation in the field.
|
|
| 3. |
- Amano, Tatsuya, et al.
(författare)
-
Transforming Practice : Checklists for Delivering Change
- 2022
-
Ingår i: Transforming Conservation : A Practical Guide to Evidence and Decision Making - A Practical Guide to Evidence and Decision Making. - 9781800648562 - 9781800648586 ; , s. 367-386
-
Bokkapitel (refereegranskat)abstract
- Delivering a revolution in evidence use requires a cultural change across society. For a wide range of groups (practitioners, knowledge brokers, organisations, organisational leaders, policy makers, funders, researchers, journal publishers, the wider conservation community, educators, writers, and journalists), options are described to facilitate a change in practice, and a series of downloadable checklists is provided.
|
|
| 4. |
- Sutherland, William J., et al.
(författare)
-
Presenting Conclusions from Assessed Evidence
- 2022
-
Ingår i: Transforming Conservation : A Practical Guide to Evidence and Decision Making - A Practical Guide to Evidence and Decision Making. - 9781800648586 - 9781800648562 ; , s. 95-132
-
Bokkapitel (refereegranskat)abstract
- Applying evidence builds on the conclusions of the assessment of the evidence. The aim of the chapter is to describe a range of ways of summarising and visualising different types of evidence so that it can be used in various decision-making processes. Evidence can also be presented as part of evidence capture sheets, argument maps, mind maps, theories of change, Bayesian networks or evidence restatements.
|
|
| 5. |
- Arnaudov, B, et al.
(författare)
-
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
- 2004
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 69:11
-
Tidskriftsartikel (refereegranskat)abstract
- We studied the shape and energy position of near-band-edge photoluminescence spectra of InN epitaxial layers with different doping levels. We found that the experimental spectra of InN layers with moderate doping level can be nicely interpreted in the frames of the "free-to-bound" recombination model in degenerate semiconductors. For carrier concentrations above n>5x10(18) cm(-3) the emission spectra can also be modeled satisfactorily, but a contribution due to a pushing up of nonequilibrium holes over the thermal delocalization level in the valence band tails should be considered in the model. The emission spectra of samples with low doping level were instead explained as a recombination from the bottom of the conduction band to a shallow acceptor assuming the same value of the acceptor binding energy estimated from the spectra of highly doped samples. Analyzing the shape and energy position of the free-electron recombination spectra we determined the carrier concentrations responsible for the emissions and found that the fundamental band gap energy of InN is E-g=692+/-2 meV for an effective mass at the conduction-band minimum m(n0)=0.042m(0).
|
|
| 6. |
- Arnaudov, B., et al.
(författare)
-
Free-to-bound radiative recombination in highly conducting InN epitaxial layers
- 2004
-
Ingår i: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036 .- 1096-3677. ; 36:4-6, s. 563-571
-
Tidskriftsartikel (refereegranskat)abstract
- We present a theoretical simulation of near-band-edge emission spectra of highly conducting n-InN assuming the model of 'free-to-bound' radiative recombination (FBRR) of degenerate electrons from the conduction band with nonequilibrium holes located in the valence band tails. We also study experimental photoluminescence (PL) spectra of highly conducting InN epitaxial layers grown by MBE and MOVPE with electron concentrations in the range (7.7 × 1017-6 × 1018) cm-3 and find that the energy positions and shape of the spectra depend on the impurity concentration. By modeling the experimental PL spectra of the InN layers we show that spectra can be nicely interpreted in the framework of the FBRR model with specific peculiarities for different doping levels. Analyzing simultaneously the shape and energy position of the InN emission spectra we determine the fundamental bandgap energy of InN to vary between Eg = 692 meV for effective mass mn0 = 0.042m0 and Eg =710 meV for mn0 = 0.1m0. © 2004 Elsevier Ltd. All rights reserved.
|
|
| 7. |
- Chen, Weimin, 1959-, et al.
(författare)
-
Optical and Microwave Double Resonance of III-nitrides
- 1999
-
Ingår i: Joint International Meeting the 196th Meeting of The Electrochemical Society ECS and the 1999 Fall Meeting of The Electrochemical Society of Japan ECSJ,1999. ; , s. 764-
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
|
|
| 8. |
|
|
| 9. |
- Esmaeili, M, et al.
(författare)
-
Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
- 2009
-
Ingår i: OPTO-ELECTRONICS REVIEW. - : Polish Academy of Sciences Chancellery. - 1230-3402 .- 1896-3757. ; 17:4, s. 293-299
-
Tidskriftsartikel (refereegranskat)abstract
- We report the results from detailed optical spectroscopy from MOCVD grown GaN/AlGaN multiple quantum wells (MQWs), as opposed to most previous studies where MBE was employed by means of photoluminescence (PL) technique. In this paper we will present theoretical and experimental results demonstrating how polarization induced electric fields and bound interface charges in GaN/AlGaN MQWs affect the emission peak energy, PL line shape, as well as the emission line width. Theoretically estimated fields in this work are consistent with experimental data. Transition energy of the heavy hole and electron ground state Ee-hh in GaN/AlGaN MQWs were calculated and it is found that it stays in good agreement with the experimental data.
|
|
| 10. |
- Haratizadeh, H, et al.
(författare)
-
Effects of Si doping position on the emission energy and recombination dynamics of GaN/AlGaN multiple quantum wells
- 2006
-
Ingår i: Physica Status Solidi (a) applications and materials science. - : Wiley. - 1862-6300 .- 1862-6319. ; 203:1, s. 149-153
-
Tidskriftsartikel (refereegranskat)abstract
- We report results from detailed optical spectroscopy from MOCVD grown GaN/Al0.07Ga0.93N multiple quantum wells (MQWs). Effects of Si doping position on the emission energy and recombination dynamics were studied by means of photoluminescence (PL) and time-resolved PL measurements. The samples were Si doped with the same level but different position of the dopant layer. Only the sample doped in the well shows the MQW emission redshifted compare to the GaN bandgap. The redshift is attributed to the self-energy shift of the electron states due to the correlated motion of the electrons exposed to the fluctuating potential of the donor ions. At low temperature the PL decay time of the sample doped in the well by a factor of two is longer than for the barrier doped case. The difference is explained by the effect of interplay of free carriers and ions on the screening of the polarization field in these doped structures.
|
|
| 11. |
- Haratizadeh, H., et al.
(författare)
-
Time resolved photoluminescence study of Si modulation doped GaN/Al 0.07Ga0.93N multiple quantum wells
- 2004
-
Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 241:5, s. 1124-1133
-
Tidskriftsartikel (refereegranskat)abstract
- The effects of the Si doping level on the recombination dynamics and carrier (exciton) localization in modulation doped GaN/Al0.07Ga 0.93N multiple-quantum-well (MQW) structures were studied by means of photoluminescence (PL) and time-resolved PL measurements. All samples with different doping levels show a QW emission which is blue shifted with respect to the 3.48 eV PL peak from the GaN buffer layer. The decay time at the peak position remains nearly constant in the range of 320-420 ps at 2 K for all doping levels. For the undoped and low-doped samples (3 × 1018 cm-3), which have less free electrons in the QWs, a non-exponential PL decay behaviour at 2 K is attributed to localized exciton recombination. The more highly doped samples (5 × 1018 cm-3 to 10 20 cm-3) show almost exponential decay curves at 2 K, suggesting the recombination of free electrons and localized holes. This localization effect appears even at high electron concentrations to cancel the expected lowering of the radiative lifetime with doping at 2 K, such a lowering is clearly observed at elevated temperatures for the highly doped samples, however. The internal polarization-induced fields of the medium and highly-doped samples are partly screened by the electrons originating from the doping in the barriers. Only the PL peak of the undoped and low-doped samples shows a redshift with time delay, related to the photogenerated carriers. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
|
| 12. |
- Kamiyama, S., et al.
(författare)
-
Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC
- 2006
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 99:9
-
Tidskriftsartikel (refereegranskat)abstract
- High-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a full width at half maximum of 110 nm at 250 K. The high B concentration of more than 1018 cm-3 improves the emission efficiency of the DAP recombination at a high temperature. Compared with the photoluminescence spectrum of GaN at 10 K, a high quantum efficiency of 95% was estimated for the highly B-doped sample. From time-resolved photoluminescence measurements, a DAP recombination time of 5.0 ms was obtained, which is in good agreement with the calculated value by the rate equation with the assumption of a 95% internal quantum efficiency. This is quite promising as a light-emitting medium by optical pumping, as well as monolithic light sources combined with nitride-based light-emitting diodes grown on the DA-doped SiC epilayer. © 2006 American Institute of Physics.
|
|
| 13. |
- Kawaguchi, K., et al.
(författare)
-
Detection of HF Toward PKS 1830-211, Search for Interstellar H2F+, and Laboratory Study of H2F+ and H2Cl+ Dissociative Recombination
- 2016
-
Ingår i: Astrophysical Journal. - 1538-4357 .- 0004-637X. ; 822:2, s. Art. no. 115-
-
Tidskriftsartikel (refereegranskat)abstract
- We report extragalactic observations of two fluorine-bearing species, hydrogen fluoride (HF) and fluoronium (H2F+), in the z = 0.89 absorber in front of the lensed blazar PKS 1830-211 with the Atacama Large Millimeter/submillimeter Array. HF was detected toward both southwest and northeast images of the blazar, with column densities >3.4 × 1014 cm-2 and 0.18 × 1014 cm-2, respectively. H2F+ was not detected, down to an upper limit (3?) of 8.8 × 1011 cm-2 and an abundance ratio of [H2F+]/[HF] 1/386. We also searched for H2F+ toward the Galactic sources NGC 6334 I and W51C, and toward Galactic center clouds with the Herschel HIFI spectrometer.6 The upper limit on the column density was derived to be 2.5 × 1011 cm-2 in NGC 6334 I, which is 1/68 of that for H2Cl+. In constrast, the ortho transition of H2Cl+ is detected toward PKS 1830-211. To understand the small abundance of interstellar H2F+, we carried out laboratory experiments to determine the rate constants for the ion-electron recombination reaction by infrared time-resolved spectroscopy. The constants determined are ke(209 K) = (1.1 ± 0.3) ×10-7 cm3 s-1 and (0.46 ± 0.05) ×10-7 cm3 s-1 for H2F+ and H2Cl+, respectively. The difference in the dissociative recombination rates between H2F+ and H2Cl+ by a factor ?2 and the cosmic abundance ratio [F]/[Cl] ? 1/6 are not enough to explain the much smaller abundance of H2F+. The difference in the formation mechanism of H2F+ and H2Cl+ in interstellar space would be a major factor in the small abundance of H2F+.
|
|
| 14. |
|
|
| 15. |
- Monemar, Bo, et al.
(författare)
-
Optical investigation of AlGaN/GaN quantum wells and superlattices
- 2004
-
Ingår i: Physica status solidi. A, Applied research. - : Wiley. - 0031-8965 .- 1521-396X. ; 201:10, s. 2251-2258
-
Tidskriftsartikel (refereegranskat)abstract
- We report a detailed optical study of several sets of multiple quantum wells (MQWs) in the AlGaN/GaN system, as well as AlN/GaN superlattice (SL) structures. In this study all materials were grown by MOCVD, as opposed to most previous studies where MBE was employed. In undoped MQWs discrete photoluminescence (PL) peaks related to discrete well width fluctuations by one full c lattice parameter are clearly observed. In doped samples this effect appears to be screened. While the recombination process in undoped samples is excitonic, in MQWs doped with Si above about 5 x 10(18) cm(-3) free electrons (a 2DEG) are dominant, and the PL process is a free electrons-localized hole transition at low temperatures. The hole localization prevails up to very high n-doping, as was previously observed in bulk GaN. The hole localization is demonstrated via several experiments, including results on PL transient decay times and LO phonon coupling. Near surface band bending, due mainly to dopant depletion in doped structures or interaction with surface states in case of higher Al content in barriers, influences the distribution of electron filling among the QWs, making a detailed modeling of the spectral shape somewhat ambiguous. It is found that AlN barriers promote a strong room temperature PL signal from the QWs, as opposed to the case with AlGaN barriers.
|
|
| 16. |
- Monemar, Bo, et al.
(författare)
-
Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures
- 2003
-
Ingår i: Proceedings of SPIE, the International Society for Optical Engineering. - : SPIE. - 0277-786X .- 1996-756X. ; 5023, s. 63-67
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We report on low temperature photoluminescence (PL) in In xGa1-xN multiple quantum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In0.01Ga0.99N. One sample with 3 QWs of width 3.5 nm and barriers of width 10.5 nm had the MQW in the depletion region of the outer surface. Two PL peaks were observed, one QW exciton from the QW closest to the GaN buffer, one lower energy peak related to a 2DEG at the interface to the GaN buffer layer. In a second similar sample 5 QWs of width 3 nm and with 6 nm highly Si doped In0.01Ga 0.99N barriers the MQW was placed in the n-side depletion region of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for n-doped Al0.07Ga 0.93N/GaN structures, with near surface MQWs.
|
|
| 17. |
- Monemar, Bo, et al.
(författare)
-
Photoluminescence of InGaN/GaN and AlGaN/GaN multiple quantum well structures : Role of depletion fields and polarization fields
- 2003
-
Ingår i: Physica status solidi. A, Applied research. - Weinheim, Germany : Wiley-VCH Verlagsgesellschaft. - 0031-8965 .- 1521-396X. ; 195:3, s. 523-527
-
Tidskriftsartikel (refereegranskat)abstract
- We report on low temperature photoluminescence (PL) in InxGa1-xN multiple quantum wells (MQWs) with x in the range 0.1 and highly Si doped barriers of In0.01Ga0.99N. The MQW was placed either in the near surface depletion field or at the n-side depletion field of a pn-junction. At low temperatures the PL and electroluminescence (EL) spectra are quite different at no, low, or reverse bias, the PL appearing at higher energy. At high forward bias a spectral component at the EL position appears in PL. This proves a strong influence of the depletion field on the optical spectra. Preliminary results are also reported for Al0.07Ga0.93N/GaN structures, with near surface MQWs with 5 QWs, both Si-doped and nominally undoped. These structures show clear spectral features related to nonequivalent QWs in a graded depletion field.
|
|
| 18. |
- Monemar, Bo, et al.
(författare)
-
Properties of the main Mg-related acceptors in GaN from optical and structural studies
- 2014
-
Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 115:5, s. 053507-
-
Tidskriftsartikel (refereegranskat)abstract
- The luminescent properties of Mg-doped GaN have recently received particular attention, e. g., in the light of new theoretical calculations, where the deep 2.9 eV luminescence band was suggested to be the main optical signature of the substitutional Mg-Ga acceptor, thus, having a rather large binding energy and a strong phonon coupling in optical transitions. We present new experimental data on homoepitaxial Mg-doped layers, which together with the previous collection of data give an improved experimental picture of the various luminescence features in Mg-doped GaN. In n-type GaN with moderate Mg doping (less than10(18) cm(-3)), the 3.466 eV ABE1 acceptor bound exciton and the associated 3.27eV donor-acceptor pair (DAP) band are the only strong photoluminescence (PL) signals at 2 K, and are identified as related to the substitutional Mg acceptor with a binding energy of 0.225 +/- 0.005 eV, and with a moderate phonon coupling strength. Interaction between basal plane stacking faults (BSFs) and Mg acceptors is suggested to give rise to a second deeper Mg acceptor species, with optical signatures ABE2 at 3.455 eV and a corresponding weak and broad DAP peak at about 3.15 eV. The 2.9 eV PL band has been ascribed to many different processes in the literature. It might be correlated with another deep level having a low concentration, only prominent at high Mg doping in material grown by the Metal Organic Chemical Vapor Deposition technique. The origin of the low temperature metastability of the Mg-related luminescence observed by many authors is here reinterpreted and explained as related to a separate non-radiative metastable deep level defect, i.e., not the Mg-Ga acceptor. (C) 2014 AIP Publishing LLC.
|
|
| 19. |
|
|
| 20. |
- Sabooni, M., et al.
(författare)
-
Dynamical study of the radiative recombination processes in GaN/AlGaN QWs
- 2008
-
Ingår i: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 19:SUPPL. 1
-
Tidskriftsartikel (refereegranskat)abstract
- The effects of the Si doping level on the recombination dynamics and carrier (exciton) localization in modulation-doped GaN/Al0.07 Ga0.93N multiple-quantum-well (MQW) structures were studied by means of photoluminescence (PL) and time-resolved PL measurements. All samples with different doping levels show a QW emission which is blue shifted with respect to the 3.48 eV PL peak from the GaN buffer layer. The decay time at the peak position remains nearly constant in the range of 320-420 ps at 2 K for all doping levels. For the undoped and low doped samples (3 × 1018 cm-3), which have less free electrons in the QWs, a non-exponential PL decay behaviour at 2 K is attributed to localized exciton recombination. The more highly doped samples (5 × 1018 cm-3 to 1020 cm-3) show almost exponential decay curves at 2 K, suggesting the recombination of free electrons and localized holes. The internal polarization-induced fields of the medium and highly-doped samples are partly screened by the electrons originating from the doping in the barriers. The emission peaks in time delayed PL spectra of these samples exhibit almost no shift as time evolves. Only the PL peak of the undoped and low-doped samples shows a redshift with time delay, related to the photogenerated carriers [1]. The decay time for the undoped sample shows non-exponential behaviour typical for localized excitons in III-N QWs. The same behaviour of decay time as a function of emission energy has been reported for InGaN QWs [2]. © Springer Science+Business Media, LLC 2008.
|
|
| 21. |
|
|
| 22. |
|
|
| 23. |
- Valcheva, E., et al.
(författare)
-
Influence of well-width fluctuations on the electronic structure of GaN/AlxGa1-xN multiquantum wells with graded interfaces
- 2007
-
Ingår i: Acta Physica Polonica. A. - 0587-4246 .- 1898-794X. ; 112:2, s. 395-400
-
Tidskriftsartikel (refereegranskat)abstract
- Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/AlxGa1-xN multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).
|
|
| 24. |
|
|
| 25. |
|
|
| 26. |
|
|
| 27. |
- Bergman, Peder, et al.
(författare)
-
Photoluminescence and electroluminescence characterization of InxGa1-x/InyGa1-yN multiple quantum well light emitting diodes
- 2002
-
Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 1493-1496
-
Konferensbidrag (refereegranskat)abstract
- We report on a study of radiative recombination in In0.11Ga0.89N/In.0.01Ga0.99N multiple quantum wells (MQWs). The QWs were nominally undoped, while the InGaN barriers were Si doped. The MQW part is situated in the depletion field of a pn-junction structure with electrical contacts, so that both photoluminescence (PL) and electroluminescence (EL) can be studied as a function of bias. The PL and EL spectra are distinctly different, in particular at low temperatures. The spectral properties and related differences in PL decay times reflect different recombination conditions in the MQW region for the individual QWs.
|
|
| 28. |
|
|
| 29. |
- Buyanova, Irina, 1960-, et al.
(författare)
-
Effect of electron irradiation on optical properties of gallium nitride
- 1999
-
Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T79, s. 72-75
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of electron irradiation on the optical properties of GaN epilayers is studied in detail by photoluminescence (PL) spectroscopy. The most common types of GaN material are used, i.e. strained heteroepitaxial layers grown on 6H SiC or Al2O3 substrates, and thick bulk-like layers with the conductivity varying from n-type to semi-insulating and p-type. The main effects of electron irradiation on all investigated samples are found to be as follows: (i) a radiation-induced quenching of excitonic emissions in the near band gap region; (ii) an appearance of broad overlapping PL emissions within the spectral range 0.7-1.1 eV and (iii) the appearance of a PL band with a sharp no-phonon (NP) line at around 0.88 eV followed by a rich phonon assisted sideband. The 0.88 eV band is shown to originate from an internal transition of a deep defect. With increasing temperature a hot PL line can be observed at about 2-4 meV above the NP line, originating from higher lying excited states of the defect. The electronic structure of the 0.88 eV defect is shown to be very sensitive to the internal strain field in the GaN epilayers.
|
|
| 30. |
- Buyanova, Irina, 1960-, et al.
(författare)
-
Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
- 1999
-
Ingår i: Physical review. B, Condensed matter and materials physics. ; 60:3, s. 1746-1751
-
Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence (PL) spectroscopy is employed to determine the nature of a near-infrared PL emission with a no-phonon line at ∼0.88 eV, commonly present in electron-irradiated GaN. This PL emission is suggested to originate from an internal transition between a moderately shallow excited state (with an ionization energy ∼21 meV) and the deep ground state (with an ionization energy ∼900 meV) of a deep defect. The existence of a higher-lying second excited state related to the 0.88-eV PL center is also shown from temperature-dependent studies. A different electronic character of the wave functions related to the first and second excited states has been revealed by PL polarization measurements. Since the PL emission has been observed with comparable intensity in all electron-irradiated GaN samples independent of doping on the starting material, it is proposed that either native defects, or common residual contaminants or their complexes are involved. The substitutional ON donor (or related complex) is considered as the most probable candidate, based on the observed striking similarity in the local vibrational properties between the 0.88-eV PL centers and the substitutional OP donor in GaP.
|
|
| 31. |
|
|
| 32. |
- Chen, Weimin, 1959-, et al.
(författare)
-
Role of the Substitutional Oxygen Donor in the Residual n-type Conductivity in GaN
- 1999
-
Konferensbidrag (refereegranskat)abstract
- A detailed photoluminescence (PL) study reveals a striking similarity in local vibrational properties of a defect center in GaN as compared to that for the substitutional OP donor in GaP. This observation could be interpreted as if the center is in fact related to the substitutional oxygen donor in GaN. The deep-level nature experimentally determined for the defect center calls for caution of a commonly referred model that the substitutional oxygen donor is responsible for the residual n-type conductivity in GaN.
|
|
| 33. |
- Darakchieva, Vanya, 1971-, et al.
(författare)
-
Phonon mode behavior in strained wurtzite AlN/GaN superlattices
- 2005
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:11, s. 115329-
-
Tidskriftsartikel (refereegranskat)abstract
- We have studied phonons in AlN/GaN superlattices with different periods but a constant well-to-barrier ratio using a combination of infrared spectroscopic ellipsometry and Raman scattering spectroscopy. The strain evolution in the superlattice structures is assessed by high-resolution x-ray diffraction and reciprocal space mapping. We have identified E1(TO), A 1(LO) and E2 localized, and E1(LO) and A 1(TO) delocalized superlattice modes. The dependencies of their frequencies on in-plane strain are analyzed and discussed, and the strain-free frequencies of the superlattice modes are estimated. A good agreement between theory and experiment is found in the case of GaN localized modes, while large deviations between theoretically estimated and experimentally determined frequency shifts are observed for the AlN localized modes. The delocalization effect on the A1(TO) and E1(LO) phonons, as well as the free-carrier effect on the E1(LO) phonon are also discussed. ©2005 The American Physical Society.
|
|
| 34. |
- Esmaeili, M., et al.
(författare)
-
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures : Influence of Al composition and Si doping
- 2007
-
Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 18:2
-
Tidskriftsartikel (refereegranskat)abstract
- A detailed study of low-temperature photoluminescence (PL) in GaN/AlGaN multiple quantum well (MQW) nanostructures has been reported. We have investigated the effect of Si doping and Al content on PL spectra and PL decay time of these structures. The temperature dependence of radiative as well as non-radiative lifetimes have been evaluated between 2K and room temperature for different Si doping. We found that radiative recombination at higher temperatures even up to RT is stronger in the doped sample, compared to the undoped one. Hole localization in GaN/AlGaN MQWs with different compositions of Al is demonstrated via PL transient decay times and LO phonon coupling. It is found that there is an increasing of the decay time at the PL peak emission with increasing Al composition. For the undoped sample, a non-exponential PL decay behaviour at 2K is attributed to localized exciton recombination. A slight upshift in QWs PL peak with increasing Al composition is observed, which is counteracted by the expected rise of the internal QW electric field with increasing Al. The localization energies have been evaluated by studying the variation of the QW emission versus temperature and we found out that the localization energy increases with increasing Al composition. © IOP Publishing Ltd.
|
|
| 35. |
- Hai, P. N., et al.
(författare)
-
Ga-related defect in as-grown Zn-doped GaN : An optically detected magnetic resonance study
- 2000
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 62:16, s. R10607-R10609
-
Tidskriftsartikel (refereegranskat)abstract
- A detailed study of as-grown Zn-doped GaN employing optically detected magnetic resonance (ODMR) spectroscopy is presented. Besides the well-known ODMR spectra of an effective-mass-like donor and Zn acceptor, a positive ODMR signal of an S=1 / 2 paramagnetic center was observed when monitoring the dominating blue luminescence band peaking at 2.8 eV. The involvement of a single Ga nucleus in the defect center is revealed from the rather well-resolved hyperfine interactions involving the isotopes 71Ga (39.9%) and 69Ga (60.1%), both with nuclear spin I=3 / 2. The C3v symmetry, the hyperfine interaction and the defect formation suggest a Ga-related complex nature of this center.
|
|
| 36. |
|
|
| 37. |
|
|
| 38. |
- Harati Zadeh, Hamid, 1964-, et al.
(författare)
-
Optical observation of discrete well width fluctuations in wide band gap III-nitride quantum wells
- 2007
-
Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 244:5, s. 1727-1734
-
Tidskriftsartikel (refereegranskat)abstract
- A detailed observation of discrete well width fluctuations via localized excitons in the photoluminescence (PL) spectra of MOCVD-grown undoped GaN/Al0.07Ga0.93 N multiple quantum wells (MQWs) has been reported. Doublet excitonic features with a distance varying between 10 and 25 meV for different well widths (1.5 to 4.5 nm) are observed in the PL spectra. They are explained in terms of discrete well width variations by one c-lattice parameter, i.e. two GaN monolayers. By mapping the PL measurements across the samples with different excitation spot size, it is shown that the extension of areas with a constant well width is less than 1 μm2. TEM pictures give evidence of interface roughness, although the contrast is weak at this low Al composition. In addition we observe a long-range variation of the PL peak position across the sample, interpreted as a fluctuation in Al composition in the barriers. The residual broadening of an excitonic peak (apart from the splitting related to well width fluctuations) is about 10 meV, somewhat larger for larger well widths, and is mainly ascribed to hole localisation potentials in the QWs. Additional broadening occurs in the MQWs due to inequivalent properties of each QW within the excitation spot. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.
|
|
| 39. |
|
|
| 40. |
- Harati Zadeh, Hamid, 1964-, et al.
(författare)
-
Photoluminescence study of Si-doped GaN/Al0.07Ga0.93N multiple quantum wells with different dopant position
- 2004
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:25, s. 5071-5073
-
Tidskriftsartikel (refereegranskat)abstract
- The Si-doped GaN/Al0.07Ga0.93N multiple quantum wells (MQW) were investigated, using photoluminescence (PL) and time-resolved (PL) measurements. The influence of Si doping on the emission energy and recombination dynamics of the MWQs were also investigated, with different dopant position in the wells. It was observed that the redshifted emission of the MQWs was attributed to the self-energy shift of the electron states due to the correlated motion of the electrons exposed to the fluctuating potential of the donor ions. It was also observed that the PL decay time of the sample was ∼760 ps, at low temperature.
|
|
| 41. |
|
|
| 42. |
|
|
| 43. |
|
|
| 44. |
|
|
| 45. |
- Kasic, A., et al.
(författare)
-
Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by infrared Spectroscopic Ellipsometry
- 2003
-
Ingår i: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 0:6 SPEC. ISS., s. 1750-1769
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- This work reviews recent ellipsometric investigations of the infrared dielectric functions of binary, ternary, and quaternary group-III nitride films. Spectroscopic Ellipsometry in the mid-infrared range is employed for the first time to determine phonon and free-carrier properties of individual group-III nitride heterostructure components, including layers of some ten nanometer thickness. Assuming the effective carrier mass, the free-carrier concentration and mobility parameters can be quantified upon model analysis of the infrared dielectric function. In combination with Hall-effect measurements, the effective carrier masses for wurtzite n- and p-type GaN and n-type InN are obtained. The mode behavior of both the E1(TO) and A1(LO) phonons are determined for ternary compounds. For strain-sensitive phonon modes, the composition and strain dependences of the phonon frequencies are differentiated and quantified. Information on the crystal quality and compositional homogeneity of the films can be extracted from the phonon mode broadening parameters. A comprehensive IR dielectric function database of group-III nitride materials has been established and can be used for the analysis of complex thin-film heterostructures designed for optoelectronic device applications. Information on concentration and mobility of free carriers, thickness, alloy composition, average strain state, and crystal quality of individual sample constituents can be derived. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
|
|
| 46. |
- Khromov, Sergey, et al.
(författare)
-
Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN
- 2011
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 84:7, s. 075324-
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of Mg doping on stacking fault (SF) formation in c-plane GaN grown by metal-organic chemical-vapor deposition has been studied for Mg concentration between 2 x 10(18) cm(-3) and 5 x 10(19) cm(-3). Transmission electron microscopy studies demonstrate a direct correlation between the increasing Mg content and the number of small (3-10-nm long) SFs present. The energy dispersive x-ray analysis (EDX) line profile of a SF shows that the Mg-impurity atom resides at a distance approximately 5 nm from the SF. Cathodoluminescence (CL) mapping reveals that the Mg-doped regions radiate at energies corresponding to known SF emission peaks. SF-related peaks in CL spectra show metastability, which may be attributed to transfer processes involving Mg acceptors and nearby associated SFs.
|
|
| 47. |
- Kitamura, N., et al.
(författare)
-
Direct observations of energy transfer from resonant electrons to whistler-mode waves in magnetosheath of Earth
- 2022
-
Ingår i: Nature Communications. - : Springer Nature. - 2041-1723. ; 13:1
-
Tidskriftsartikel (refereegranskat)abstract
- Excitation of whistler-mode waves by cyclotron instability is considered as the likely generation process of the waves. Here, the authors show direct observational evidence for locally ongoing secular energy transfer from the resonant electrons to the whistler-mode waves in Earth's magnetosheath. Electromagnetic whistler-mode waves in space plasmas play critical roles in collisionless energy transfer between the electrons and the electromagnetic field. Although resonant interactions have been considered as the likely generation process of the waves, observational identification has been extremely difficult due to the short time scale of resonant electron dynamics. Here we show strong nongyrotropy, which rotate with the wave, of cyclotron resonant electrons as direct evidence for the locally ongoing secular energy transfer from the resonant electrons to the whistler-mode waves using ultra-high temporal resolution data obtained by NASA's Magnetospheric Multiscale (MMS) mission in the magnetosheath. The nongyrotropic electrons carry a resonant current, which is the energy source of the wave as predicted by the nonlinear wave growth theory. This result proves the nonlinear wave growth theory, and furthermore demonstrates that the degree of nongyrotropy, which cannot be predicted even by that nonlinear theory, can be studied by observations.
|
|
| 48. |
- Kitamura, N., et al.
(författare)
-
Energy Transfer Between Hot Protons and Electromagnetic Ion Cyclotron Waves in Compressional Pc5 Ultra-low Frequency Waves
- 2021
-
Ingår i: Journal of Geophysical Research - Space Physics. - : AMER GEOPHYSICAL UNION. - 2169-9380 .- 2169-9402. ; 126:5
-
Tidskriftsartikel (refereegranskat)abstract
- The Magnetospheric Multiscale (MMS) spacecraft observed many enhancements of electromagnetic ion cyclotron (EMIC) waves in an event in the late afternoon outer magnetosphere. These enhancements occurred mainly in the troughs of magnetic field intensity associated with a compressional ultralow frequency (ULF) wave. The ULF wave had a period of similar to 2-5 min (Pc5 frequency range) and was almost static in the plasma rest frame. The magnetic and ion pressures were in antiphase. They are consistent with mirror-mode type structures. We apply the Wave-Particle Interaction Analyzer method, which can quantitatively investigate the energy transfer between hot anisotropic protons and EMIC waves, to burst-mode data obtained by the four MMS spacecraft. The energy transfer near the cyclotron resonance velocity was identified in the vicinity of the center of troughs of magnetic field intensity, which corresponds to the maxima of ion pressure in the compressional ULF wave. This result is consistent with the idea that the EMIC wave generation is modulated by ULF waves, and preferential locations for the cyclotron resonant energy transfer are the troughs of magnetic field intensity. In these troughs, relatively low resonance velocity due to the lower magnetic field intensity and the enhanced hot proton flux likely contribute to the enhanced energy transfer from hot protons to the EMIC waves by cyclotron resonance. Due to the compressional ULF wave, regions of the cyclotron resonant energy transfer can be narrow (only a few times of the gyroradii of hot resonant protons) in magnetic local time.
|
|
| 49. |
- Monemar, Bo, et al.
(författare)
-
A hydrogen-related shallow donor in GaN?
- 2006
-
Ingår i: Physica. B, Condensed matter. - : Elsevier BV. - 0921-4526 .- 1873-2135. ; 376, s. 460-463
-
Tidskriftsartikel (refereegranskat)abstract
- We present photoluminescence (PL) data for deliberately O-doped, high-resistive GaN samples where a new shallow donor-bound exciton (DBE) peak at about 3.4746 eV (corrected for strain shift) at 2 K appears. This DBE is strongly enhanced upon annealing in the entire range 450-900 degrees C. The possible relation of this DBE to a metastable H donor state is discussed. (c) 2006 Elsevier B.V. All rights reserved.
|
|
| 50. |
|
|
