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Sökning: WFRF:(Benedetto B) > (2005-2009)

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  • Di Benedetto, Luigi, et al. (författare)
  • Strain balance approach for optimized signal-to-noise ratio in SiGe quantum well bolometers
  • 2009
  • Ingår i: ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. - 9781424443536 ; , s. 101-104
  • Konferensbidrag (refereegranskat)abstract
    • This work presents thermal and electrical characterization of SiGe/Si multi-quantum wells (MQWs) with different layer profiles in complete bolometer structures. The thermal property of the bolometers was studied by measuring thermal coefficient of resistivity (TCR) through I-V curves for five temperatures (25, 40, 55, 80 and 100°C) and for four different pixel areas. The results show a strong dependency of TCR on the Si/SiGe layer thickness and the presence of dopant impurity in the MQW. The noise measurements of MQWs were performed carefully by eliminating all external contributions and the noise spectroscopy provided the noise characteristic parameters. The results demonstrate that the noise depends on the geometric size of the MQW and it increases with decreasing of the pixel area. The investigations show the noise level in the bolometer structures is sensitive to any dopant segregation from the contact layers.
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  • Ghandi, Reza, et al. (författare)
  • High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension
  • 2009
  • Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 30:11, s. 1170-1172
  • Tidskriftsartikel (refereegranskat)abstract
    • Implantation-free mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV (about 80% of the theoretical value) were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown. The key step in achieving a high breakdown voltage is a controlled etching into the epitaxially grown p-doped anode layer to reach an optimum dopant dose of similar to 1.2 x 10(13) cm(-2) in the junction termination extension (JTE). Electroluminescence revealed a localized avalanche breakdown that is in good agreement with device simulation. A comparison of diodes with single-and double-zone etched JTEs shows a higher breakdown voltage and a less sensitivity to varying processing conditions for diodes with a two-zone JTE.
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  • Resultat 1-6 av 6

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