| 1. |
- Beshkova, Milena, et al.
(författare)
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Properties of 3C-SiC Grown by Sublimation Epitaxy on Different Type of Substrates
- 2010
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Ingår i: Materials Science Forum, Vols. 645-648. - : Transtec Publications; 1999. ; , s. 183-186
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Konferensbidrag (refereegranskat)abstract
- 3C-SiC layers have been grown by using sublimation epitaxy at a temperature of 2000 degrees C, on different types of on-axis 6H-SiC(0001) substrates. The influence of the type of substrate on the morphology of the layers investigated by Atomic Force Microscopy (AFM) is discussed. Stacking faults are studied by reciprocal space map (RSM) which shows that double positions domains exists.
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| 2. |
- Beshkova, Milena, et al.
(författare)
-
Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
- 2012
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Ingår i: Vacuum. - : Elsevier. - 0042-207X .- 1879-2715. ; 86:10, s. 1595-1599
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Tidskriftsartikel (refereegranskat)abstract
- 3C-SiC layers have been grown by using sublimation epitaxy at a source temperature of 2000 degrees C, under vacuum conditions (andlt;10(-5) mbar) on well oriented (on-axis) 6H-SiC (0001) substrates. Close space sublimation growth geometry has been used in a RF-heated furnace employing high-purity graphite crucible with a possibility to change the growth environment from Si vapor-rich to C vapor-rich. The optical microscopy in transmission mode reveals continuous 3C-domains for 3C-SiC with less than 0.4% 6H-inclusions for the layer grown at Si-rich conditions, and separate 3C-SiC domains for the layer grown at C-rich conditions. The type of 6H-inclusions for layers with continuous domain structure investigated by Atomic Force Microscopy (AFM) is discussed. 2Theta-omega scan shows 0006 and 111 peaks coming from the substrate and the layer, respectively with a higher intensity of the 111 peak for 3C-SiC grown at Si-rich conditions which is related with the continuous character of the 3C-SiC domains.
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| 3. |
- Scajev, P., et al.
(författare)
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On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures
- 2012
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Ingår i: HETEROSIC and WASMPE 2011. - : Trans Tech Publications Inc.. ; , s. 159-163
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Konferensbidrag (refereegranskat)abstract
- We applied a number of time-resolved optical techniques for investigation of optical and photoelectrical properties of cubic SiC grown by different technologies on different substrates. The excess carriers were injected by a short laser pulse and their dynamics was monitored by free-carrier absorption, light-induced transient grating, and photoluminescence techniques in a wide excitation range. Combining an optical and electrical probe beam delay, we found that free carrier lifetimes in differently grown layers vary from few ns up to 20 mu s. Temperature dependences of carrier diffusivity and lifetime revealed a pronounced carrier trapping in thin sublimation grown layers. In free-standing layers and thick sublimation layers, the ambipolar mobility was found the highest (120 cm(2)/Vs at room temperature). A linear correlation between the room-temperature band edge emission and carrier lifetime in differently grown layers was attributed to defect density, strongly dependent on the used growth conditions.
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| 4. |
- Zoulis, Georgios, et al.
(författare)
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Investigation of Low Doped n-Type and p-Type 3C-SiC Layers Grown on 6H-SiC Substrates by Sublimation Epitaxy
- 2010
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Ingår i: Silicon Carbide and Related Materials 2009. ; , s. 179-182
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Konferensbidrag (refereegranskat)abstract
- Both, n-type and p-type 3C-SiC samples grown on 6H-SiC substrates by sublimation epitaxy have been investigated. From low temperature photoluminescence studies, we demonstrate a low level of residual (n and/or p-type) doping with weak compensation, which is confirmed by secondary ion mass spectroscopy in the case of p-type samples.
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