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- Chen, Ruei-San, et al.
(författare)
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Electronic transport properties in aluminum indium nitride nanorods grown by magnetron sputter epitaxy
- 2013
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Ingår i: Applied Surface Science. - : Elsevier. - 0169-4332 .- 1873-5584. ; 285, s. 625-628
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Tidskriftsartikel (refereegranskat)abstract
- The electronic transport properties of the wide-bandgap aluminum indium nitride (AlInN) nanorods (NRs) grown by ultrahigh-vacuum magnetron sputter epitaxy (MSE) have been studied. The conductivities of the ternary compound nanostructure locates at the value of 15 Q-1 cm -1, which is respectively one and two orders of magnitude lower than the binary GaN and InN counterparts grown by chemical vapor deposition (CVD). The very shallow donor level/band with the activation energy at 11 + 2 meV was obtained by the temperature-dependent measurement. In addition, the photoconductivity has also been investigated. The photoconductive (PC) gain of the NRs device can reach near 2400 under a low bias at 0.1 V and the light intensity at 100W m-2 for ultraviolet response in vacuum. The power-insensitive gain and ambience-dependent photocurrent are also observed, which is attributed to the probable surfacecontrolled PC mechanism in this ternary nitride nanostructure.
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2. |
- Hsiao, Ching-Lien, et al.
(författare)
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Composition tunable Al1-xInxN nanorod arrays grown by ultra-high-vacuum magnetron sputter epitaxy
- 2011
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Self-assembled ternary Al1-xInxN nanorod arrays with variable In concentration, 0.10 ≤ x ≤ 0.32 have been realized onto c-plane sapphire substrates by ultra-high-vacuum magnetron sputter epitaxy with Ti0.21Zr0.79N or VN seed layers assistance. The formation of nanorods was very sensitive to the applied seed layer. Without proper seed layer assistance a continuous Al1-xInxN film was grown. The nanorods exhibit hexagonal crosssections with preferential growth along the c axis. A coaxial rod structure with higher In concentration in the core was observed by (scanning) transmission electron microscopy in combination with low-loss electron energy loss spectroscopy and energy dispersive xray spectroscopy. 5 K cathodoluminescence spectroscopy of Al0.86In0.14N nanorods revealed band edge emission at ~5.46 eV, which was accompanied by a strong defectrelated emission at ~ 3.38 eV.
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3. |
- Hsiao, Ching-Lien, et al.
(författare)
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Spontaneous Formation of AlInN Core–Shell Nanorod Arrays by Ultrahigh-Vacuum Magnetron Sputter Epitaxy
- 2011
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Ingår i: Applied Physics Express. - : Japan Society of Applied Physics. - 1882-0786. ; 4:115002
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Tidskriftsartikel (refereegranskat)abstract
- The spontaneous formation of AlInN core–shell nanorod arrays with variable In concentration has been realized by ultrahigh-vacuum magnetron sputter epitaxy with Ti0.21Zr0.79N or VN seed layer assistance. The nanorods exhibit hexagonal cross sections with preferential growth along the c-axis. A core–shell rod structure with a higher In concentration in the core was observed by (scanning) transmission electron microscopy in combination with low-loss electron energy loss spectroscopy and energy dispersive X-ray spectroscopy. 5 K cathodoluminescence spectroscopy of Al0.86In0.14N nanorods revealed band edge emission at ∼5.46 eV, which was accompanied by a strong defect-related emission at ∼3.38 eV
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