| 1. |
- Chubarov, M., et al.
(författare)
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Boron nitride: A new photonic material
- 2014
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Ingår i: Physica. B, Condensed matter. - : Elsevier. - 0921-4526 .- 1873-2135. ; 439, s. 29-34
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Tidskriftsartikel (refereegranskat)abstract
- Rhombohedral boron nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. X-ray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmission electron microscopy reveals stacking of more than 40 atomic layers. Results from Fourier Transform InfraRed (FTIR) spectroscopy measurements are compared with XRD data showing that FTIR is not phase sensitive when various phases of sp(2)-BN are investigated. XRD measurements show a significant improvement of the crystalline quality when adding silicon to the gas mixture during the growth; this is further confirmed by cathodoluminescence which shows a decrease of the defects related luminescence intensity.
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| 2. |
- Chubarov, M., et al.
(författare)
-
Characterization of Boron Nitride Thin Films
- 2013
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Konferensbidrag (refereegranskat)abstract
- Rhombohedral Boron Nitride layers were grown on sapphire substrate in a hot-wall CVD reactor. The characterization of those layers is reported and the results are discussed in correlation with the various growth parameters used.
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| 3. |
- Chubarov, M., et al.
(författare)
-
Chemical vapour deposition of epitaxial rhombohedral BN thin films on SiC substrates
- 2014
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Ingår i: CrystEngComm. - : Royal Society of Chemistry. - 1466-8033. ; 16:24, s. 5430-5436
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Tidskriftsartikel (refereegranskat)abstract
- Epitaxial growth of rhombohedral boron nitride (r-BN) on different polytypes of silicon carbide (SiC) is demonstrated using thermally activated hot-wall chemical vapour deposition and triethyl boron and ammonia as precursors. With respect to the crystalline quality of the r-BN films, we investigate the influence of the deposition temperature, the precursor ratio (N/B) and the addition of a minute amount of silicon to the gas mixture. From X-ray diffraction and transmission electron microscopy, we find that the optimal growth temperature for epitaxial r-BN on the Si-face of the SiC substrates is 1500 degrees C at a N/B ratio of 642 and silicon needs to be present not only in the gas mixture during deposition but also on the substrate surface. Such conditions result in the growth of films with a c-axis identical to that of the bulk material and a thickness of 200 nm, which is promising for the development of BN films for electronic applications.
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