| 1. |
- Bachert, C., et al.
(författare)
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Important research questions in allergy and related diseases: 3-chronic rhinosinusitis and nasal polyposis - a GA(2)LEN study
- 2009
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Ingår i: Allergy. - : Wiley. - 1398-9995 .- 0105-4538. ; 64:4, s. 520-533
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Forskningsöversikt (refereegranskat)abstract
- Chronic rhinosinusitis is one of the most common health care challenges, with significant direct medical costs and severe impact on lower airway disease and general health outcomes. The diagnosis of chronic rhinosinusitis (CRS) currently is based on clinical signs, nasal endoscopy and CT scanning, and therapeutic recommendations are focussing on 2 classes of drugs, corticosteroids and antibiotics. A better understanding of the pathogenesis and the factors amplifying mucosal inflammation therefore seems to be crucial for the development of new diagnostic and therapeutic tools. In an effort to extend knowledge in this area, the WP 2.7.2 of the GA(2)LEN network of excellence currently collects data and samples of 1000 CRS patients and 250 control subjects. The main objective of this project is to characterize patients with upper airway disease on the basis of clinical parameters, infectious agents, inflammatory mechanisms and remodeling processes. This collaborative research will result in better knowledge on patient phenotypes, pathomechanisms, and subtypes in chronic rhinosinusitis. This review summarizes the state of the art on chronic rhinosinusitis and nasal polyposis in different aspects of the disease. It defines potential gaps in the current research, and points to future research perspectives and targets.
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| 2. |
- Olsen, S. H., et al.
(författare)
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Strained Si/SiGe MOS technology : Improving gate dielectric integrity
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 86:3, s. 218-223
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Tidskriftsartikel (refereegranskat)abstract
- Strained Si is recognised as a necessary technology booster for the nanoelectronics regime. This work shows that high levels of stress attainable from globally strained Si/SiGe platforms can benefit gate leakage and reliability in addition to MOSFET channel mobility. Device self-heating due to the low thermal conductivity of SiGe is shown to be the dominating factor behind compromised performance against short channel strained Si/SiGe MOSFETs. Novel thin virtual substrates aimed at reducing self-heating effects are investigated. In addition to reducing self-heating effects, the thin Virtual substrates provide further improvements to gate oxide integrity, reliability and lifetime compared with conventional thick virtual substrates. This is attributed to tire lower surface roughness of the thin virtual substrates which arises due to the reduced interactions of strain-relieving misfit dislocations during thin Virtual substrate growth. Good agreement between experimental data and physical models is demonstrated, enabling gate leakage mechanisms to be identified. The advantages and challenges of using globally strained Si/SiGe to advance MOS technology are discussed.
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| 3. |
- O'Neill, A., et al.
(författare)
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Reduced self-heating by strained silicon substrate engineering
- 2008
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332 .- 1873-5584. ; 254:19, s. 6182-6185
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Tidskriftsartikel (refereegranskat)abstract
- Substrate engineering innovations such as SOI and the use of Si/SiGe virtual substrates become necessary in order to maintain performance leverage of integrated circuits with continued scaling. The relevance of thermal effects in device design increases since the thermal conductivity of these new materials is poor. The electrical performance of devices fabricated on thin virtual substrates grown by two different techniques is presented. It is found that self-heating is reduced and that thermal resistance measurements agree with modelling predictions. The reduction in performance enhancement seen in many strained Si MOSFETs is found here to be largely due to self-heating effects, rather than parasitics or the loss of strain.
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