| 1. |
- Kalinina, E. V., et al.
(författare)
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Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers
- 2003
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 37:10, s. 1229-1233
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Tidskriftsartikel (refereegranskat)abstract
- The effect of irradiation with 1-MeV neutrons on electrical properties of Al-based Schottky barriers and p(+)-n-n(+) diodes doped by ion-implantation with Al was studied; the devices were formed on the basis of high-resistivity, pure 4H-SiC epitaxial layers possessing n-type conductivity and grown by vapor-transport epitaxy. The use of such structures made it possible to study the radiation defects in the epitaxial layer at temperatures as high as 700 K. Rectifying properties of the diode structures were no longer observed after irradiation of the samples with neutrons with a dose of 6 x 10(14) cm(-2); this effect is caused by high (up to 50 GOmega) resistance of the layer damaged by neutron radiation. However, the diode characteristics of irradiated p(+)-n-n(+) structures were partially recovered after an annealing at 650 K.
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| 2. |
- Kalinina, E. V., et al.
(författare)
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Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions
- 2004
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 38:10, s. 1187-1191
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Tidskriftsartikel (refereegranskat)abstract
- Photoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p(+)-n-n(+) diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions.
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| 3. |
- Lebedev, A.A., et al.
(författare)
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Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:26, s. 4447-4449
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Tidskriftsartikel (refereegranskat)abstract
- The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n-p-n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a "floating base" regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.
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| 4. |
- Lebedev, A.A., et al.
(författare)
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Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)
- 2002
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Pleiades Publishing Ltd. - 1063-7826 .- 1090-6479. ; 36:11, s. 1270-1275
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Tidskriftsartikel (refereegranskat)abstract
- Results obtained in studying the effect of ionizing radiation on epitaxial layers and devices based on silicon carbide (SiC) are considered. It is shown that, in investigations of wide-gap semiconductors (WGS), account should be taken of how the rate of removal of mobile charge carriers - the standard parameter in determining the radiation hardness of a material - depends on temperature. The use of data obtained only at room temperature may lead to an incorrect assessment of the radiation hardness of WGS. A conclusion is made that the WGS properties combine, on the one hand, high radiation hardness of high-temperature devices based on these semiconductors and, on the other, the possibility of effective radiation-induced doping (e.g., for obtaining semi-insulating local regions in a material at room temperature). © 2002 MAIK "Nauka/Interperiodica".
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