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Träfflista för sökning "WFRF:(Doyle M.) srt2:(1995-1999)"

Sökning: WFRF:(Doyle M.) > (1995-1999)

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2.
  • Doyle, J. P., et al. (författare)
  • Characterization of deep level defects in 4H and 6H SiC via DLTS, SIMS and MeV e-beam irradiation
  • 1996
  • Ingår i: III-nitride, SiC and diamond materials for electronic devices. ; , s. 519-524
  • Konferensbidrag (refereegranskat)abstract
    • Electrically active defects in both 4H and 6H polytypes of SiC have been observed through the use of deep level transient spectroscopy (DLTS). Schottky contacts were grown by VPE with doping concentrations, the epitaxial layer having a doping concentration in the range of 10 exp 14/cu cm to 10 exp 17/cu cm. Numerous levels have been found in the as-grown n-type 6H-SiC samples, and SIMS and MeV electron irradiation have been employed to correlate the defect levels to impurities or structural defects. In contrast, only a single level is observed in the as-grown 4H-SiC samples.
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4.
  • Doyle, J P, et al. (författare)
  • Observation of near-surface electrically active defects in n-type 6H-SiC
  • 1998
  • Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 83, s. 3649-3651
  • Tidskriftsartikel (refereegranskat)abstract
    • In n-type 6H-SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1 X 10(-13) cm(-3), a region near the front surface contains defects with concentrations approaching 10(14) cm(-3). A relationship between the near-surface defects and metallic impurities is suggested by a Ti concentration of 1 X 10(16) cm(-3) in this region. The high concentration of near surface defects is found to significantly reduce the carrier lifetime. (C) 1998 American Institute of Physics. [S0021-8979(98)03007-2].
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5.
  • Qiu, Li, et al. (författare)
  • A formula for Computation of the Real Stability Radius
  • 1995
  • Ingår i: Automatica. - 0005-1098. ; 31:6, s. 879-890
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper presents a readily computable formula for the real stability radius with respect to an arbitrary stability region in the complex plane.
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