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Träfflista för sökning "WFRF:(ESTEVE J) srt2:(2010-2014)"

Sökning: WFRF:(ESTEVE J) > (2010-2014)

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  • Esteve, Romain, et al. (författare)
  • Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)
  • 2010
  • Ingår i: AIP Conference Proceedings. - : AIP Publishing. - 9780735408470 ; , s. 55-58
  • Konferensbidrag (refereegranskat)abstract
    • The electrical properties of post-oxidized PECVD oxides in wet oxygen based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid and Chemical-Vapor-Deposition mechanisms on 6H-SiC(0001) have been studied. Different 6H-SiC(0001) samples exhibiting diverse crystal orientations (on-axis, 2 degrees off-axis) and growth conditions were regarded. A comparative study of oxide qualities has been carried out via capacitance and conductance measurements (C-G-V). Achieved interface traps densities and effective oxide charges were compared for the different samples. Reliability issues have been considered via current measurements (I-V and TZDB) and statistical data treatment techniques (Weibull plots). Oxides based on 3C-SiC layer grown by a process combining VLS and CVD methods demonstrated low interface states densities D-it of 1.2 x 10(10) eV(-1)cm(-2) at 0.63 eV below the conduction band and fixed oxide charges Q(eff)/(g) estimated to -0.1 x 10(11) cm(-2)
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  • Ghandi, Reza, et al. (författare)
  • Experimental evaluation of different passivation layers on the performance of 3kV 4H-SiC BJTs
  • 2010
  • Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 645-648:Part 1-2, s. 661-664
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, the electrical performance in terms of maximum current gain, ON-resistance and blocking capability has been compared for 4H-SiC BJTs passivated with different surface passivation layers. Variation in BJT performance has been correlated to densities of interface traps and fixed oxide charge, as evaluated through MOS capacitors. Six different methods were used to fabricate SiO2 surface passivation on BJT samples from the same wafer. The highest current gain was obtained for PECVD deposited SiO2 which was annealed in N2O ambient at 1100 degrees C during 3 hours. Variations in breakdown voltage for different surface passivations were also found, and this is attributed to differences in fixed oxide charge that can affect the optimum dose of the high voltage JTE termination.
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  • Resultat 1-9 av 9

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