| 1. |
- Bigelow, NH, et al.
(författare)
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Climate change and Arctic ecosystems: 1. Vegetation changes north of 55 degrees N between the last glacial maximum, mid-Holocene, and present
- 2003
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Ingår i: Journal of Geophysical Research. - 2156-2202. ; 108:D19
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Forskningsöversikt (refereegranskat)abstract
- [1] A unified scheme to assign pollen samples to vegetation types was used to reconstruct vegetation patterns north of 55degreesN at the last glacial maximum (LGM) and mid-Holocene (6000 years B. P.). The pollen data set assembled for this purpose represents a comprehensive compilation based on the work of many projects and research groups. Five tundra types (cushion forb tundra, graminoid and forb tundra, prostrate dwarf-shrub tundra, erect dwarf-shrub tundra, and low- and high-shrub tundra) were distinguished and mapped on the basis of modern pollen surface samples. The tundra-forest boundary and the distributions of boreal and temperate forest types today were realistically reconstructed. During the mid-Holocene the tundra-forest boundary was north of its present position in some regions, but the pattern of this shift was strongly asymmetrical around the pole, with the largest northward shift in central Siberia (similar to200 km), little change in Beringia, and a southward shift in Keewatin and Labrador (similar to200 km). Low- and high-shrub tundra extended farther north than today. At the LGM, forests were absent from high latitudes. Graminoid and forb tundra abutted on temperate steppe in northwestern Eurasia while prostrate dwarf-shrub, erect dwarf-shrub, and graminoid and forb tundra formed a mosaic in Beringia. Graminoid and forb tundra is restricted today and does not form a large continuous biome, but the pollen data show that it was far more extensive at the LGM, while low- and high-shrub tundra were greatly reduced, illustrating the potential for climate change to dramatically alter the relative areas occupied by different vegetation types.
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| 2. |
- Cobet, C, et al.
(författare)
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Optical properties of wurtzite AlxGa1-xN (x < 0.1) parallel and perpendicular to the c axis
- 2001
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 64:16
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Tidskriftsartikel (refereegranskat)abstract
- Measurements of the dielectric function components parallel and perpendicular to the optical axis of wurtzite GaN are presented. The results are obtained on a multilayer AlxGa1-xN / GaN film grown on gamma -LiAlO2 which exhibits a very small amount of Al (x<0.1) in the uppermost layer. We use the spectroscopic ellipsometry to determine (omega) around the interband critical points of GaN up to 9 eV. Since the optical axis of the films are parallel to the surface, a separation of the different epsilon components is possible. The line shape of the measured tensor components e(parallel to) and epsilon (perpendicular to) is in very good agreement with results of recently published band-structure calculations. By comparison with the calculations we assign structures in the dielectric function to critical points in the Brillouin zone. In addition, a comparison with similar spectra for CdS and CdSe is presented, together with a discussion of possible spin-orbit splitting effects.
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| 3. |
- Edwards, NV, et al.
(författare)
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Real-time assessment of overlayer removal on 4H-SiC surfaces : Techniques and relevance to contact formation
- 2000
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Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 338-3, s. 1033-1036
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Tidskriftsartikel (refereegranskat)abstract
- We applied real-time spectroscopic ellipsometric (SE) measurements to assess the removal of overlayer material from 4H-SiC Si- and C-face surfaces in order to investigate the final step of an otherwise standard RCA cleaning regimen commonly used to prepare SiC surfaces for contact formation. The selected treatments (buffered hydrofluoric acid (HF), concentrated HF, dilute HF and 5% HF in Methanol) removed 4 to 40 Angstrom of effective SiO2 overlayer thickness from these surfaces. We also found that the concentrated HF treatment yielded the best surface, i.e. the most abrupt bulk-to-ambient transition region.
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| 4. |
- Edwards, NV, et al.
(författare)
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Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry
- 2000
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Ingår i: Surface Science. - : Elsevier. - 0039-6028 .- 1879-2758. ; 464:1, s. L703-L707
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Tidskriftsartikel (refereegranskat)abstract
- Spectroscopic ellipsometry (SE) was used to assess the removal of overlayer material from 4H-SiC (0001) and (0001) [Si- and C-face] surfaces in real time and, in particular, the critical final step of an otherwise standard RCA cleaning regimen commonly used to prepare SiC surfaces for contact formation. The treatments selected [buffered hydrofluoric acid (HF), concentrated HF, and dilute HF] removed 4-40 Angstrom of effective SiO2 overlayer thickness from these surfaces. The concentrated HF treatment yielded the best surface, i.e. that with the most abrupt transition region between bulk and surface and with the most oxide material removed. A fourth treatment regimen (sequential application of methanol, water, and 5% HF in methanol) was also developed for comparison with the full RCA clean. (C) 2000 Elsevier Science B.V. All rights reserved.
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| 5. |
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| 6. |
- Pozina, Galia, et al.
(författare)
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Time-resolved photoluminescence in strained GaN layers
- 2001
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Ingår i: Physica status solidi. A, Applied research. - 0031-8965 .- 1521-396X. ; 183:1, s. 151-155
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Tidskriftsartikel (refereegranskat)abstract
- A set of GaN epilayers grown by metalorganic chemical vapor deposition on 6H-SiC substrates was studied by time-resolved photoluminescence (PL) spectroscopy. The PL spectra are dominated by the free A exciton (FEA) and by the neutral-donor-bound exciton (D0X) transitions. The position of FEA indicates that the GaN layers are under tension. We observe that the recombination lifetime for the FEA is about 40-50 ps in all the layers, whereas the recombination time for the D0X varies for different samples. We found that the recombination lifetimes for D0X have a clear dependence on the position of FEA, i.e. the recombination lifetime increases with decreasing strain in the layers. The results can be explained in terms of the character of the hole states involved in the donor-bound exciton recombination.
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