| 1. |
- Hussain, Muhammad Waqar, 1985-, et al.
(författare)
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A SiC BJT-Based Negative Resistance Oscillator for High-Temperature Applications
- 2019
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Ingår i: IEEE Journal of the Electron Devices Society. - : Institute of Electrical and Electronics Engineers (IEEE). - 2168-6734. ; 7:1, s. 191-195
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Tidskriftsartikel (refereegranskat)abstract
- This brief presents a 59.5 MHz negative resistanceoscillator for high-temperature operation. The oscillator employs an in-house 4H-SiC BJT, integrated with the requiredcircuit passives on a low-temperature co-fired ceramic substrate. Measurements show that the oscillator operates from room-temperature up to 400 C. The oscillator delivers an output◦power of 11.2 dBm into a 50 Ω load at 25 C, which decreases to 8.4 dBm at 400 C. The oscillation frequency varies by 3.3% in the entire temperature range. The oscillator is biased witha collector current of 35 mA from a 12 V supply and has amaximum DC power consumption of 431 mW.
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| 2. |
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| 3. |
- Hussain, Muhammad Waqar, 1985-, et al.
(författare)
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Silicon carbide BJT oscillator design using S-parameters
- 2019
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Ingår i: Silicon Carbide and Related Materials 2018. - : Trans Tech Publications Ltd. ; , s. 674-678
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Konferensbidrag (refereegranskat)abstract
- Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 °C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).
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| 4. |
- Kargarrazi, Saleh, et al.
(författare)
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500 degrees C SiC PWM Integrated Circuit
- 2019
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Ingår i: IEEE transactions on power electronics. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0885-8993 .- 1941-0107. ; 34:3, s. 1997-2001
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Tidskriftsartikel (refereegranskat)abstract
- This letter reports on a high-temperature pulsewidth modulation (PWM) integrated circuit microfabricated in 4H-SiC bipolar process technology that features an on-chip integrated ramp generator. The circuit has been characterized and shown to be operational in a wide temperature range from 25 to 500 degrees C. The operating frequency of the PWM varies in the range of 160 to 210 kHz and the duty cycle varies less than 17% over the entire temperature range. The proposed PWM is suggested to efficiently and reliably control power converters in extreme environments.
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