| 1. |
- Happ, T. D., et al.
(författare)
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Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:25, s. 4091-4093
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Tidskriftsartikel (refereegranskat)abstract
- We report the fabrication of short-cavity lasers with highly reflective two-dimensional photonic crystal mirrors on an InGaAsP/InP laser structure emitting at 1.57 mum. An intracavity photonic crystal mirror creates two coupled cavities, which provide additional longitudinal mode selection for stable single-mode operation with side-mode suppression ratios exceeding 35 dB. The shortest lasers with l=100 mum overall length have a threshold current of 13 mA and provide more than 4 mW power under continuous wave operation. Longer devices with l=200 mum deliver up to 9 mW. A maximum modulation bandwidth of 7.9 GHz was determined by relative intensity noise measurements.
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| 2. |
- Kamp, M., et al.
(författare)
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Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:26, s. 4074-4075
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Tidskriftsartikel (refereegranskat)abstract
- We have fabricated short cavity lasers with deeply etched Bragg mirrors based on 1.55 mum emitting InGaAsP/InP laser structures. Continuous-wave operation has been obtained for devices with a length of 40 mum, showing threshold currents of 12 mA. The dynamic properties of the lasers were studied by measurements of the relative intensity noise (RIN). A maximum modulation frequency of 8.4 GHz was extracted from the RIN data.
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| 3. |
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| 4. |
- Sun, Y. T., et al.
(författare)
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Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:12, s. 1885-1887
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Tidskriftsartikel (refereegranskat)abstract
- The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.
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