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Träfflista för sökning "WFRF:(Georgsson K) srt2:(1995-1999)"

Sökning: WFRF:(Georgsson K) > (1995-1999)

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2.
  • Carlsson, N, et al. (författare)
  • IMPROVED SIZE HOMOGENEITY OF INP-ON-GAINP STRANSKI-KRASTANOW ISLANDS BY GROWTH ON A THIN GAP INTERFACE LAYER
  • 1995
  • Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248. ; 156:1-2, s. 23-29
  • Tidskriftsartikel (refereegranskat)abstract
    • Coherent InP nano-sized islands, embedded into GaInP, have been grown by metal-organic vapour phase epitaxy using the Stranski-Krastanow growth mode. Photoluminescence, atomic force microscopy and transmission electron microscopy studies show that the insertion of a thin ∼ 4 monolayer thick GaP layer affects the critical thickness of the subsequently deposited two-dimensional InP wetting layer, increasing it from ∼ 1.5 monolayers (without an inserted GaP layer) to ∼ 2.5 monolayers (with an inserted GaP layer). We demonstrate that the inserted GaP layer affects also the island formation. The bimodal size distribution of Stranski-Krastanow islands, typical for low InP coverages, can be overcome without island coalescence by deposition on top of the thin GaP layer, where a coverage of InP of about 3.5–4.5 monolayers results in the formation of almost only the larger, fully developed, pyramidal islands. Annealing experiments at growth temperature of 580°C show that these islands (base area ≈ 40 × 50 nm2, height ≈ 10–15 nm, surface density ≈ (1−2) × 109 cm−2) are rather stable in a time-scale over several minutes before they slowly undergo an Ostwald ripening process.
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3.
  • Georgsson, K, et al. (författare)
  • TRANSMISSION ELECTRON-MICROSCOPY INVESTIGATION OF THE MORPHOLOGY OF INP STRANSKI-KRASTANOW ISLANDS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
  • 1995
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 67:20, s. 2981-2982
  • Tidskriftsartikel (refereegranskat)abstract
    • We have used transmission electron microscopy to determine the morphology of InP Stranski–Krastanow islands in GaInP, grown by metalorganic chemical vapor deposition at 580 °C. We investigated both capped and uncapped islands. It was found that the fully developed islands have the principal shape of truncated pyramids with a hexagonal base both before and after overgrowth. The planes defining the islands are of {001}, {110}, and {111} types. The base dimensions are 40–50 nm and 55–65 nm in the [1̄10] and [110] directions, respectively, and the height is 12–18 nm.
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