Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs

• The paper presents the results of electrical characterization of MOS capacitors and SOI MOSFETs with novel high-? LaLuO3 dielectric as a gate oxide. The energy distribution of interface state density at LaLuO 3/Si interface is presented and typical maxima of 1.2×10 11 eV-1cm-2 was found at about 0.25 eV from the silicon valence band. The output and transfer characteristics of the n- and p-MOSFET (channel length and width were 1 μm and 50 μm, respectively) are presented. The front channel mobility appeared to be 126 cm2V -1s-1 and 70 cm2V-1s-1 for n- and p-MOSFET, respectively. The front channel threshold voltages as well as the density of states at the back interface are presented.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

Channel mobility

High-k oxide

Interface states density

LaLuO3

Lanthanum lutetium oxide

Molecular beam deposition MBD

MOSFET

SOI

Threshold voltage

Transconductance

High-k oxides

LaLuO₃

MOS-FET

Characterization

Chemical modification

Electric properties

Gates (transistor)

Insulating materials

Lanthanum oxides

MOS capacitors

Semiconductor devices

MOSFET devices

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)