| 1. |
- Öhrn, Angelica, et al.
(författare)
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Elastic scattering of 96 MeV neutrons from iron, yttrium, and lead
- 2008
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Ingår i: Physical Review C. Nuclear Physics. - 0556-2813 .- 1089-490X. ; 77:2, s. 024605-
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Tidskriftsartikel (refereegranskat)abstract
- Data on elastic scattering of 96 MeV neutrons from Fe-56, Y-89, and Pb-208 in the angular interval 10-70 degrees are reported. The previously published data on Pb-208 have been extended, as a new method has been developed to obtain more information from data, namely to increase the number of angular bins at the most forward angles. A study of the deviation of the zero-degree cross section from Wick's limit has been performed. It was shown that the data on Pb-208 are in agreement with Wick's limit while those on the lighter nuclei overshoot the limit significantly. The results are compared with modern optical model predictions, based on phenomenology and microscopic nuclear theory. The data on Fe-56, Y-89, and Pb-208 are in general in good agreement with the model predictions.
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| 4. |
- Sjöberg, Klas, et al.
(författare)
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Autoimmune markers in lymphoid malignancies.
- 2008
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Ingår i: Scandinavian Journal of Immunology. - : Wiley. - 1365-3083 .- 0300-9475. ; 67:5, s. 509-515
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Tidskriftsartikel (refereegranskat)abstract
- Chronic immune stimulation such as Helicobacter pylori (hp) infection, Sjögren's syndrome or coeliac disease may initiate non-Hodgkin lymphoma (NHL). The opposite (appearance of autoimmunity) has also been reported. The aim of this study was to describe the pattern of these immune markers in patients with lymphoid malignancies. Sera from 96 patients with NHL (median age 72, range 38-88, F/M 41/55) were analysed with ELISA to determine the frequency of antibodies against guinea pig (gp) and human recombinant (hr) transglutaminase type 2 (Tg2), and hr factor XIII subunit a* (part of the Tg-family), extractable nuclear antigen (ENA), and hp. As hp antibodies decrease in younger age cohorts a sex- and age-matched control group of 768 persons was used. The control population for transglutaminase antibodies consisted of 59 blood donors, (median 42 years, range 19-65) was analysed with a commercial kit. Gp-Tg2-IgG positivity was documented in 72% and hr-Tg2-IgG positivity in 15% (5% positive controls for both; P < 0.001 and ns, respectively). For IgA 3% had gp-Tg2 and 4% hr-Tg2 (5% in controls: ns for both). Anti-FXIII-IgA positivity was found in 22% (5% in controls; P = 0.03). Unspecific anti-ENA-IgG positivity was found in 24% (P < 0.001), while only 2% had specific ENA autoantibodies. Moreover, 36% were positive for anti-hp-IgG, while controls were positive in 54% (P < 0.001). The frequency of unspecific autoantibodies was increased. No differences could be noted in specific autoantibodies (hr-Tg2-IgA). In contrast, fewer than expected were anti-hp-positive. A defective immune response, similar to that in autoimmune diseases, could contribute to the pathogenesis of lymphoid malignancies.
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| 8. |
- Gustavsson, Johan, 1974, et al.
(författare)
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Optimized active region design for high speed 850 nm VCSELs
- 2009
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Ingår i: CLEO/Europe - EQEC 2009 - European Conference on Lasers and Electro-Optics and the European Quantum Electronics Conference; Munich; Germany; 14 June 2009 through 19 June 2009. - 9781424440801 ; , s. Art. no. 5192928-
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Konferensbidrag (refereegranskat)abstract
- Short wavelength (850 nm) VCSELs operating at speeds of 25 Gb/s and above are needed for future highcapacity, short reach data communication links. The modulation bandwidth is intrinsically limited by thedifferential gain of the QWs used in the active region of the VCSEL. In this work we explore the use of strainedInGaAs/AlGaAs QWs and benchmark the performance against conventional GaAs/AlGaAs QWs.An 8-band k⋅p model [1] was used to calculate the energy band dispersions, using band offsets from modelsolid theory [2]. In all cases, the QW and barrier compositions and QW thickness were chosen for a gain peak at845 nm, enabling emission at 850 nm with a small detuning between the gain peak and the cavity resonance.With increasing In-concentration the QW thickness is reduced and the Al-concentration in the barrier isincreased to maintain the gain peak at 845 nm and the number of QWs is increased to maintain opticalconfinement and enable operation at a low carrier density for high differential gain. It was found that theincorporation of up to 10% In leads to a significant reduction in threshold carrier density and increase indifferential gain. This is due to an increased separation and reduced mixing between the highest heavy-hole andlight-hole valence bands (Fig.1). A further increase of In concentration leads to a less marked improvement.With an optimum active region design (5 x 4 nm In0.10Ga0.90As/Al0.37Ga0.63As QWs) a differential gain twice ashigh as that of a conventional design with 3 x 8 nm GaAs/Al0.30Ga0.70As QWs was predicted (Table 1).The improvement of differential gain was experimentally confirmed by extracting the resonance frequencyand its dependence on current from the modulation response of VCSELs with optimized InGaAs/AlGaAs QWand conventional GaAs/AlGaAs QW active regions. The differential gain was calculated from the correspondingD-factors (Fig.2) [3]. Excellent agreement was obtained between theory and experiments (Table 1).VCSELs with an optimized InGaAs/AlGaAs QW active region have a modulation bandwidth of 20 GHz at25° and 15 GHz at 85°C [4] and have enabled error-free transmission over 50 (100) m multimode fiber up to 32(25) Gb/s at a bias current density as low as 11 kA/cm2 under direct current modulation.
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| 10. |
- Hammar, Mattias, et al.
(författare)
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1.3-mu m InGaAs vertical-cavity surface-emitting lasers
- 2005
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Ingår i: 2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS). - 0780392175 ; , s. 396-397
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Konferensbidrag (refereegranskat)abstract
- We report on the fabrication and performance of N-free InGaAs/GaAs 1.3-mu m range vertical-cavity surface-emitting lasers (VCSELs). Using optimized quantum-well (QW) growth conditions in combination with negative gain-cavity tuning, high-performance VCSELs with emission wavelength up to 1300 nm are realized. The performance figures include mA-range threshold currents, mW-range singlemode output power, continuous-wave operation up to 140 degrees C and 10 Gbit/s data transmission.
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| 11. |
- Lope, V, et al.
(författare)
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Occupation and thyroid cancer risk in Sweden
- 2005
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Ingår i: Journal of occupational and environmental medicine. - : Ovid Technologies (Wolters Kluwer Health). - 1076-2752. ; 47:9, s. 948-957
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Tidskriftsartikel (refereegranskat)
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| 12. |
- Seidel, Y. E., et al.
(författare)
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Stability of nanostructured Pt/glassy carbon electrodes prepared by colloidal lithography
- 2008
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 155:3, s. K50-K58
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Tidskriftsartikel (refereegranskat)abstract
- The stability of nanostructured Pt/glassy carbon (GC) model electrodes upon exposure to a realistic electrochemical/electrocatalytic reaction environment (continuous reaction, continuous electrolyte flow) was studied by microscopic techniques, X-ray photoelectron spectroscopy, and electrochemical measurements. The model electrodes consist of Pt nanostructures with well-defined sizes and regular spacing on planar GC substrates, and were fabricated using colloidal lithography techniques. Additional plasma treatments of the GC substrates prior to Pt deposition were tested to improve the stability of the resulting Pt/GC model electrodes. Both evaporation and sputter deposition were used for Pt-film fabrication. The model catalysts prepared by Pt evaporation were found to be rather unstable. The stability was significantly improved for sputter-deposited Pt films, and Pt sputter deposition on a GC substrate, pretreated first in oxygen plasma and then in Ar plasma, resulted in stable model electrodes with a fully intact layer of Pt nanostructures after the electrocatalytic experiments.
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| 14. |
- Söderberg, E., et al.
(författare)
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High speed, high temperature operation of 1.28-μm singlemode InGaAs VCSELs
- 2006
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 42:17, s. 978-979
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Tidskriftsartikel (refereegranskat)abstract
- Singlemode 1.28 μm InGaAs VCSELs, with a higher-order mode suppression >30 dB in the temperature range 25-85°C, have been fabricated using an inverted surface relief technique for relaxed fabrication tolerances. High performance 2.5 and 10 Gbit/s modulation is demonstrated in the same temperature range.
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| 15. |
- Söderberg, E., et al.
(författare)
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Single mode 1.28 ÎŒm InGaAs VCSELs using an inverted surface relief
- 2006
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Ingår i: Conference Digest - IEEE International Semiconductor Laser Conference. ; , s. 123-124
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Konferensbidrag (refereegranskat)abstract
- High performance 1.28 Όm InGaAs single mode VCSELs have been fabricated using an inverted surface relief to relax critical fabrication tolerances. Higher order mode suppression >30 dB and 10 Gbps modulation are demonstrated up to 85°C.
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