| 1. |
- McMahon, J J, et al.
(författare)
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Unit processes for Cu/BCB redistribution layer bonding for 3D ICs
- 2006
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Ingår i: Advanced Metallization Conference 2005 (AMC 2005). - WARRENDALE : MATERIALS RESEARCH SOCIETY. - 1558998659 ; , s. 179-183
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Konferensbidrag (refereegranskat)abstract
- A novel via-first, back-end-of-the-line (BEOL) compatible, monolithic wafer-level three-dimensional (3D) interconnect technology platform is presented. This platform employs wafer bonding of damascene-patterned metal/adhesive redistribution layers on two wafers to provide both high density of inter-wafer electrical interconnects and strong adhesive bond of two wafers in a single unit processing step. Two key steps for this approach are 1) fabrication of a metal/adhesive redistribution layer on the BEOLprocessed wafers by damascene patterning and 2) face-to-face alignment and bonding of two wafers utilizing copper/tantalum (Cu/Ta) and benzocyclobutene (BCB) redistribution layers. A baseline process and two modified processes are investigated toward evaluation of 1) acceptable wafer-scale nonplanarity, removal rate, and surface damage after CMP and 2) seamless bonding at all three possible interfaces with sufficiently strong BCB-to-BCB critical adhesion energy and Cu-to-Cu contact resistance. Migration of voids in the sputtered copper during bonding and etch profiles for different etch processes are discussed.
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| 2. |
- Niklaus, Frank, et al.
(författare)
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Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration
- 2006
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Ingår i: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 153:4, s. G291-G295
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Tidskriftsartikel (refereegranskat)abstract
- Wafer-level three-dimensional integration (3D) is an emerging technology to increase the performance and functionality of integrated circuits (ICs), with adhesive wafer bonding a key step in one of the attractive technology platforms. In such an application, the dielectric adhesive layer needs to be very uniform, and precise wafer-to-wafer alignment accuracy (similar to 1 mu m) of the bonded wafers is required. In this paper we present a new adhesive wafer bonding process that involves partially curing (cross-linking) of the benzocyclobutene (BCB) coatings prior to bonding. The partially cured BCB layer essentially does not reflow during bonding, minimizing the impact of inhomogeneities in BCB reflow under compression and/or any shear forces at the bonding interface. The resultant nonuniformity of the BCB layer thickness after wafer bonding is less than 1% of the average layer thickness, and the wafers shift relative to each other during the wafer bonding process less than 1 mu m (average) for 200 mm diameter wafers. When bonding two silicon wafers using partially cured BCB, the critical adhesion energy is sufficiently high (>= 14 J/m(2)) for subsequent IC processing.
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| 3. |
- Niklaus, Frank, et al.
(författare)
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Adhesive wafer bonding
- 2006
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 99:3
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Forskningsöversikt (refereegranskat)abstract
- Wafer bonding with intermediate polymer adhesives is an important fabrication technique for advanced microelectronic and microelectromechanical systems, such as three-dimensional integrated circuits, advanced packaging, and microfluidics. In adhesive wafer bonding, the polymer adhesive bears the forces involved to hold the surfaces together. The main advantages of adhesive wafer bonding include the insensitivity to surface topography, the low bonding temperatures, the compatibility with standard integrated circuit wafer processing, and the ability to join different types of wafers. Compared to alternative wafer bonding techniques, adhesive wafer bonding is simple, robust, and low cost. This article reviews the state-of-the-art polymer adhesive wafer bonding technologies, materials, and applications.
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