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Träfflista för sökning "WFRF:(Haglund Emanuel 1988) srt2:(2018)"

Sökning: WFRF:(Haglund Emanuel 1988) > (2018)

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1.
  • Larsson, Anders, 1957, et al. (författare)
  • 1060 nm VCSELs for long-reach optical interconnects
  • 2018
  • Ingår i: Optical Fiber Technology. - : Elsevier BV. - 1095-9912 .- 1068-5200. ; 44, s. 36-42
  • Tidskriftsartikel (refereegranskat)abstract
    • Reach extension of high capacity optical interconnects based on vertical-cavity surface-emitting lasers (VCSELs) and multimode fibers (MMFs), as needed for large-scale data centers, would benefit from high-speed GaAs-based VCSELs at 1060 nm. At this wavelength, the chromatic dispersion and attenuation of the optical fiber are much reduced in comparison with 850 nm. We present single and multimode 1060 nm VCSELs based on designs derived partly from our high-speed 850 nm VCSEL designs. The single-mode VCSEL, with a modulation bandwidth exceeding 22 GHz, supports back-to-back data rates up to 50 Gbps at 25 °C and 40 Gbps at 85 °C under binary NRZ (OOK) modulation. Using mode-selective launch, we demonstrate error-free 25 Gbps transmission over 1000 m of 1060 nm optimized MMF. Higher data rates and/or longer distances will be possible with equalization, forward-error-correction, and/or multilevel modulation.
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2.
  • Haglund, Emanuel, 1988 (författare)
  • VCSEL Cavity Engineering for High Speed Modulation and Silicon Photonics Integration
  • 2018
  • Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
    • The GaAs-based vertical-cavity surface-emitting laser (VCSEL) is the standard light source in today's optical interconnects, due to its energy efficiency, low cost, and high speed already at low drive currents. The latest commercial VCSELs operate at data rates of up to 28 Gb/s, but it is expected that higher speeds will be required in the near future. One important parameter for the speed is the damping of the relaxation oscillations. A higher damping is affordable at low data rates to reduce signal degradation due to overshoot and jitter, while lower damping is required to reach higher data rates. A VCSEL with the damping optimized for high data rates enabled error-free transmission at record-high data rates up to 57 Gb/s. For future interconnect links it is of interest with tighter integration between the optics and the silicon-based electronics. Techniques to heterogeneously integrate GaAs-based VCSELs on silicon could potentially enable integrated multi-wavelength VCSEL arrays, thus increasing the data rate through wavelength division multiplexing. Heterogeneous integration of GaAs-based VCSELs would also benefit applications that need short-wavelength light sources, such as photonic integrated circuits for life sciences and bio photonics. Silicon-integrated short-wavelength hybrid-cavity VCSELs with up to 2.3 mW optical output power and 12 GHz modulation bandwidth, which enables data transmission at up to 25 Gb/s, are demonstrated by employing ultra-thin adhesive bonding. Further, a vertical-cavity silicon-integrated laser (VCSIL) with in-plane waveguide emission is demonstrated by employing an intra-cavity waveguide with a weak diffraction grating that couples light from the standing wave in the vertical cavity into an in-plane waveguide.
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3.
  • Kumari, Sulakshna, et al. (författare)
  • Vertical-Cavity Silicon-Integrated Laser with In-Plane Waveguide Emission at 850 nm
  • 2018
  • Ingår i: Laser and Photonics Reviews. - : Wiley. - 1863-8899 .- 1863-8880. ; 12:2, s. 1700206-
  • Tidskriftsartikel (refereegranskat)abstract
    • A continuous-wave electrically-pumped short-wavelength hybrid vertical-cavity silicon-integrated laser (VCSIL) with in-plane emission into a silicon nitride (SiN) waveguide is experimentally demonstrated. The coupling from the vertical cavity into the in-plane SiN waveguide is achieved by a weak grating on the SiN waveguide placed inside the cavity. The grating provides coupling, sets the polarization of the lasing output, and provides transverse mode control. A 5 mu m oxide-aperture diameter device with a threshold current of 1.1 mA produces 73 mu W single-sided waveguide-coupled optical output power at 2.6 mA bias current at a wavelength of 856 nm and a side-mode suppression ratio (SMSR) of 29 dB.
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  • Resultat 1-3 av 3

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