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- KOPNICZKY, J, et al.
(författare)
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MEV-ION-INDUCED DEFECTS IN ORGANIC-CRYSTALS
- 1995
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Ingår i: RADIATION MEASUREMENTS. - : PERGAMON-ELSEVIER SCIENCE LTD. - 1350-4487. ; 25:1-4, s. 47-50
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- We present scanning force microscope images of crater-like defects induced by MeV atomic ions incident on single-crystal L-valine surfaces. For grazing incidence ions, the craters are elongated along the ion azimuth of incidence and are followed by raised
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- Lalita, J, et al.
(författare)
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Defect evolution in MeV ion-implanted silicon
- 1996
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Ingår i: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - : ELSEVIER SCIENCE BV. - 0168-583X. ; 120:1-4, s. 27-32
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Lightly doped silicon samples of both n- and p-type, have been implanted with low doses of H, B and Si ions using energies between 1 and 6 MeV. The resulting electrically active point defects were characterized by deep level transient spectroscopy (DLTS)
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