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- HALLEN, A, et al.
(författare)
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DIVACANCY DISTRIBUTIONS IN FAST-ION IRRADIATED SILICON
- 1994
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Ingår i: RADIATION EFFECTS AND DEFECTS IN SOLIDS. - : GORDON BREACH SCI PUBL LTD. - 1042-0150. ; 128:3, s. 179-186
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The distributions of divacancies of single negative charge state produced by fast ion irradiation (E greater than or equal to 1 MeV/nucleon) have been established by deep level transient spectroscopy (DLTS). The divacancy concentration profiles from irrad
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