| 1. |
- Bratus, V. Y., et al.
(författare)
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Vacancy-related defects in ion-beam and electron irradiated 6H-SiC
- 2001
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Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 184:04-jan, s. 229-236
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Tidskriftsartikel (refereegranskat)abstract
- A brief review is given on EPR study of irradiation-induced defects in SiC. The results of low-temperature study of Ky1 and Ky2 centers reveal for both of them the C-S symmetry, spin S = 1/2 and close coincidence of the g-tensor components. For Ky2 defect the principal values of g-tensor have been determined as g(z) = 2.0048, g(x) = 2.0022 and g(y) = 2.0037, where z and x directions reside in the (11 (2) over bar0) plane and the z-axis makes up an angle 65 degrees with the c-axis. The same residence of z- and x-axis and an angle 59 degrees are found for Ky1 center, g(z) = 2.0058, g(x) = 2.0025 and g(y) = 2.0023. A comparison of experimental and calculated hyperfine (HF) parameters is presented which suggests that Ky2 and Ky1 defects can be assigned to the positively charged carbon vacancy in 6H-SiC. The EPR study of defects created along the Al+ ion track in n-type 6H-SiC shows that lineshape, linewidth and integral intensity of the EPR signal reflect the state of damaged layer generated by ion implantation. A variation of defect density with annealing is reported and defect origin is discussed.
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| 2. |
- Andersson, Roland, et al.
(författare)
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Akut gastroenterologi i fokus
- 2002
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Ingår i: Svensk kirurgi. - 0346-847X. ; 60, s. 336-336
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)
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| 3. |
- Blank, T. V., et al.
(författare)
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Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes
- 2001
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Ingår i: Technical physics letters. - : Pleiades Publishing Ltd. - 1063-7850 .- 1090-6533. ; 27:9, s. 776-778
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Tidskriftsartikel (refereegranskat)abstract
- Using metal-semiconductor structures based on a pure epitaxial layer of n-4H-SiC (N-d - N-a = 4 x 10(15) cm(-3)), UV photodetectors were created with a maximum photosensitivity at 4.9 eV and a quantum efficiency up to 0.3 el/ph. The photosensitivity spectrum of the base structure is close to the spectrum of bactericidal action of the UV radiation. For photon energies in the 3.4 - 4.7 eV range, the quantum efficiency of the photoelectric conversion exhibits rapid growth with the temperature above 300 K, which is explained by the participation of photons in indirect interband transitions. This growth is not manifested when the photon energy is close to the threshold energy of direct optical transitions in the nondirect-bandgap semiconductor, which allows the threshold energy to be evaluated (similar to4.9 eV).
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| 4. |
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| 5. |
- Storasta, Liutauras, et al.
(författare)
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Pseudodonor nature of the D-I defect in 4H-SiC
- 2001
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:1, s. 46-48
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Tidskriftsartikel (refereegranskat)abstract
- We use the recent findings about the pseudodonor character of the D-I defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the D-I defect indeed is correlated to such a hole trap. In addition, we show that the D-I defect is not correlated to the Z(1/2) electron trap, in contrast to what was previously reported.
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| 6. |
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