| 1. |
- Azarov, A. Yu., et al.
(författare)
-
Dopant distribution in high fluence Fe implanted GaN
- 2008
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 104:5, s. 053509-
-
Tidskriftsartikel (refereegranskat)abstract
- Undoped wurtzite GaN epilayers implanted at room temperature with 50-325 keV Fe+ ions in the fluence range of 10(15)-10(17) ions/cm(2) are studied by a combination of Rutherford backscattering/channeling spectrometry and time-of-flight elastic recoil detection analysis. The results show an enhanced Fe concentration close to the surface for high ion fluences (>1 X 10(16) cm(-2)), which increases with the ion fluence. Annealing at 800 degrees C for 30 min has a negligible effect on the Fe distribution in the material bulk, but further increases the Fe concentration near the surface. Our findings can be understood by radiation enhanced diffusion during ion implantation and an increased Fe diffusivity in the near surface region with distorted stoichiometry, or formation of secondary phases and precipitates for the highest doses. The simulation shows that, if enhanced diffusion is the reason for Fe buildup at the surface, both radiation enhanced diffusion and the thermal diffusion of Fe atoms near the surface, need to be at least five times larger than ordinary bulk diffusion to explain the increased Fe surface concentration.
|
|
| 2. |
- Blank, T. V., et al.
(författare)
-
Temperature dependence of the photoelectric conversion quantum efficiency of 4H-SiC Schottky UV photodetectors
- 2005
-
Ingår i: Semiconductor Science and Technology. - : IOP Publishing. - 0268-1242 .- 1361-6641. ; 20:8, s. 710-715
-
Tidskriftsartikel (refereegranskat)abstract
- Ultraviolet Schottky photodetectors based on n-4H-SiC (N-d - N-a = 4 x 10(15) cm(-3)) epitaxial layers of high purity have been fabricated. Their spectral sensitivity range is 3.2-5.3 eV peaking at 4.9 eV (quantum efficiency is about similar to 0.3 electron/photon), which is close to the bactericidal ultraviolet radiation spectrum. The temperature dependence of the quantum efficiency of 4H-SiC Schottky structure has been investigated to determine the temperature stability and the mechanism of the photoelectric conversion process. At low temperatures (78-175 K) the quantum efficiency increases with increasing temperature for all photon energy values and then tends to saturate. We suppose that some imperfections in the space-charge region act as traps that capture both photoelectrons and photoholes. After some time the trapped electron-hole pairs recombine due to the tunnelling effect. At high temperatures (more than 300 K), the second enhancement region of the quantum efficiency is observed in the photon energy range of 3.2-4.5 eV. It is connected with a phonon contribution to indirect optical transitions between the valence band and the M-point of the conduction band. When the photon energy is close to a direct optical transition threshold this enhancement region disappears. This threshold is estimated to be 4.9 eV. At photon energies more than 5 eV a drastic fall of the quantum efficiency has been observed throughout the temperature interval. We propose that in this case the photoelectrons and photoholes are bound to form hot excitons in the space-charge region due to the Brillouin zone singularity, and do not contribute to the following photoelectroconversion process.
|
|
| 3. |
- Borseth, T. M., et al.
(författare)
-
Annealing study of Sb+ and Al+ ion-implanted ZnO
- 2005
-
Ingår i: Superlattices and Microstructures. - : Elsevier BV. - 0749-6036 .- 1096-3677. ; 38:4-6, s. 464-471
-
Tidskriftsartikel (refereegranskat)abstract
- In this work we have studied diffusion and electrical activation in Al+ and Sb+ implanted ZnO samples using secondary ion mass spectrometry (SIMS), scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). The samples were hydrothermally grown and post-implant annealing was performed at 800, 900 and 1000 degrees C in pure oxygen atmosphere, After each annealing step the samples were characterized with SSRM/SCM and SIMS. The thermal treatments did not induce any significant impurity redistribution as measured by SIMS, while electrical compensation is observed by SSRM/SCM for the Sb-implanted sample yielding less n-doping than in the as-grown samples. In the Al-implanted samples, an increase in carrier concentration is observed; we ascribe this to Al-related donors and possibly interstitial lithium, a common residual impurity in the samples that have been shown to be very mobile by SIMS.
|
|
| 4. |
|
|
| 5. |
- Domeika, Marius, et al.
(författare)
-
Guidelines for the laboratory diagnosis of Chlamydia trachomatis infections in East European countries
- 2009
-
Ingår i: Journal of the European Academy of Dermatology and Venereology. - : Wiley. - 0926-9959 .- 1468-3083. ; 23:12, s. 1353-1363
-
Forskningsöversikt (refereegranskat)abstract
- The present guidelines aim to provide comprehensive information regarding the laboratory diagnosis of infections caused by Chlamydia trachomatis in East European countries. These recommendations contain important information for laboratory staff working with sexually transmitted infections (STIs) and/or STI-related issues. Individual East European countries may be required to make minor national adjustments to these guidelines as a result of lack of accessibility to some reagents or equipment, or laws in a specific country.
|
|
| 6. |
|
|
| 7. |
|
|
| 8. |
|
|
| 9. |
- Intarasiri, S., et al.
(författare)
-
Characterization of the crystalline quality of beta-SiC formed by ion beam synthesis
- 2006
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 249, s. 851-855
-
Tidskriftsartikel (refereegranskat)abstract
- The ion beam synthesis (IBS) technique is applied to form crystalline silicon carbide (SiC) for future optoelectronics applications. Carbon ions at 80 and 40 keV were implanted into (100) high-purity p-type silicon wafers at room temperature and 400 degrees C, respectively, to doses in excess of 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a vacuum furnace at temperatures of 800, 900 and 1000 degrees C, respectively. Elastic recoil detection analysis was used to investigate depth distributions of the implanted ions and infrared transmittance (IR) measurement was used to characterize formation of SiC in the implanted Si substrate. Complementary to IR, Raman scattering measurements were also carried out. Levels of the residual damage distribution of the samples annealed at different temperatures were compared with that of the as-implanted one by Rutherford backscattering spectrometry (RBS) in the channeling mode. The results show that C-ion implantation at the elevated temperature, followed by high-temperature annealing, enhances the synthesis of crystalline SiC.
|
|
| 10. |
- Intarasiri, S., et al.
(författare)
-
RBS and ERDA determinations of depth distributions of high-dose carbon ions implanted in silicon for silicon-carbide synthesis study
- 2006
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 249, s. 859-864
-
Tidskriftsartikel (refereegranskat)abstract
- For ion beam synthesis of silicon carbide (SiC), a knowledge of the depth distribution of implanted carbon ions in silicon is crucial for successful development. Based on its simplicity and availability, we selected Rutherford backscattering spectrometry (RBS) as an analysis technique for this purpose. A self-developed computer program dedicated to extract depth profiles of lighter impurities in heavier matrix is established. For control, calculated results are compared with an other ion beam analysis (IBA) technique superior for studying lighter impurity in heavier substrate i.e. elastic recoil detection analysis (ERDA). The RBS was performed with a 1.7-MV Tandetron accelerator using He2+ as the probe ions. The ERDA was performed with a 5-MV Pelletron accelerator using I8+ as the probe ions. This work shows that the RBS-extracted data had no significant deviations from those of ERDA and simulations by SRIM2003 and SIMPL computer codes. We also found that annealing at temperatures as high as 1000 degrees C had quite limited effect on the redistribution of carbon in silicon.
|
|
| 11. |
|
|
| 12. |
|
|
| 13. |
- Kaiser, L, et al.
(författare)
-
Structural characterization of the tetrameric form of the major cat allergen Fel d 1
- 2007
-
Ingår i: Journal of Molecular Biology. - : Elsevier BV. - 0022-2836 .- 1089-8638. ; 370:4, s. 714-727
-
Tidskriftsartikel (refereegranskat)abstract
- Felis domesticus allergen 1(Fel d 1) is a 35 kDa tetrameric glycoprotein formed by two heterodimers which elicits IgE responses in 95% of patients with allergy to cat. We have previously established in vitro conditions for the appropriate folding of recombinant Fel d 1 using a direct linkage of chain 1 to chain 2 (construct Fel d 1 (1+2)) and chain 2 to chain 1 (construct Fel d 1 (2+1)). Although the crystal structure of Fel d 1 (2+1) revealed a striking structural similarity to that of uteroglobin, a steroid-inducible cytokine-like molecule with anti-inflammatory and immunomodulatory properties, no functional tetrameric form of Fel d 1 could be identified. Here we present the crystal structure of the Fel d 1 (1+2) tetramer at 1.6 A resolution. Interestingly, the crystal structure of tetrameric Fel d 1 reveals two different calcium-binding sites. Symmetrically positioned on each side of the Fel d 1 tetramer, the external Ca(2+)-binding sites correspond to a putative Ca(2+)-binding site previously suggested for uteroglobin. The second Ca(2+)-binding site lies within the dimerization interface, stabilizing the formation of the Fel d 1 tetramer, and inducing important local conformational changes that directly govern the shape of two water-filled cavities. The crystal structure suggests a potential portal for an unknown ligand. Alternatively, the two cavities could be used by the allergen as a conditional inner space allowing for the spatial rearrangement of centrally localized side-chains, such as Asp130, without altering the overall fold of the molecule. The striking structural similarity of the major cat allergen to uteroglobin, coupled to the identification in the present study of a common Ca(2+)-binding site, let us speculate that Fel d 1 could provoke an allergic response through the modulation of phospholipase A2, by sequestering Ca ions in a similar manner as previously suggested for uteroglobin.
|
|
| 14. |
- Liu, Z. L., et al.
(författare)
-
Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers
- 2009
-
Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 311:18, s. 4356-4359
-
Tidskriftsartikel (refereegranskat)abstract
- A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content "quasi-homo" buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry.
|
|
| 15. |
- Neuvonen, Pekka T., et al.
(författare)
-
Interaction between Na and Li in ZnO
- 2009
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 95:24
-
Tidskriftsartikel (refereegranskat)abstract
- The interaction between group-Ia elements in ZnO have been studied by implanting Na into hydrothermally grown ZnO samples containing similar to 4x10(17) Li/cm(3) and employing secondary ion mass spectrometry for sample analysis. Postimplantation annealing above 500 degrees C results in a diffusion of Na and concurrently Li is efficiently depleted from the regions occupied by Na. The data show unambiguously that Na and Li compete for the same trapping site and the results provide strong experimental evidence for that the formation energies of Na on Zn site together with that of interstitial Li are lower than those of Li on Zn site and interstitial Na in highly resistive ZnO. This conclusion is also supported by recent theoretical estimates of the formation energies of these species as a function of the Fermi-level position in ZnO.
|
|
| 16. |
- Suchodolskis, Arturas, et al.
(författare)
-
Scanning spreading resistance microscopy of shallow doping profiles in silicon
- 2006
-
Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - : Elsevier BV. - 0168-583X .- 1872-9584. ; 253:02-jan, s. 141-144
-
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate the application of scanning spreading resistance microscopy (SSRM) for characterization of shallow highly-conductive layers formed by boron implantation of lowly doped n-type silicon substrate followed by a post-implantation annealing. The electrically active dopant concentration versus depth was obtained from a cross-section of freshly cleaved samples where the Si-surface could be clearly distinguished by depositing a SiO2-layer before cleavage. To quantify free carrier concentration we calibrated our data against samples with implanted/annealed boron profiles established by secondary ion mass spectrometry (SIMS). A good fit of SSRM and SIMS data is possible for free carrier concentrations lower than 10(20) cm(-3), but for higher concentrations there is a discrepancy indicating an incomplete activation of the boron.
|
|
