| 1. |
|
|
| 2. |
|
|
| 3. |
- Danielsson, Örjan, et al.
(författare)
-
Reducing stress in silicon carbide epitaxial layers
- 2003
-
Ingår i: Journal of Crystal Growth. - : Elsevier. - 0022-0248 .- 1873-5002. ; 252:1-3, s. 289-296
-
Tidskriftsartikel (refereegranskat)abstract
- A susceptor for the epitaxial growth of silicon carbide, with an up-lifted substrate holder, is investigated and compared to other susceptor designs both experimentally and by the use of computational fluid dynamics simulations. It is shown that the wafer bending due to temperature gradients is diminished in a hot-wall reactor compared to growth in a cold-wall reactor. The substrate backside growth is diminished using the up-lifted substrate holder, limiting the substrate bending due to the backside growth. Thereby the stress built into the epitaxial layers during growth is significantly reduced. Simulations indicate a lower effective C/Si ratio over the wafer, and a lower preferable growth temperature, as compared to the original susceptor design. In addition a slightly higher growth rate is achieved
|
|
| 4. |
|
|
| 5. |
- Hallin, Christer, et al.
(författare)
-
The effect of thermal gradients on SiC wafers
- 2003
-
Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 193-196
-
Konferensbidrag (refereegranskat)abstract
- An in-situ curvature measurement equipment has been used to measure the curvature change of 4H-SiC 8degrees off-axis wafers, both with and without a CVD grown epitaxial layer, under beat treatments. The curvature of the wafer was found to increase while heating on the back-side and measuring on the front-side. This was independent whether Si- or C-face was towards the heater. The change in curvature was similar to0.05 m(-1) when ramping the temperature from R.T. up to 1300 degreesC, and was slightly more pronounced in the <11 (2) over bar0> direction compared with the <1 (1) over bar 00> direction.
|
|
| 6. |
- Jacobson, H., et al.
(författare)
-
Doping-induced strain in N-doped 4H-SiC crystals
- 2003
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 82:21, s. 3689-3691
-
Tidskriftsartikel (refereegranskat)abstract
- Stress in epitaxial layers due to crystal lattice mismatch directly influences the growth, structure, and basic electrophysical parameters of epitaxial films and also to a large extent the degradation processes in semiconductor devices. In this letter, we present a theoretical model for calculating the induced lattice compression due to N doping and the critical thickness concerning formation of misfit dislocations in homoepitaxial 4H–SiC layers with different N-doping levels. For example: The model predicts that substrates with a N concentration of 3×1019 cm-3 induce misfit dislocations when the epilayer thickness reaches ∼10 μm. Also, the N-doping concentration in the 1×1018–1×1019 cm-3 range yields a strain that not will cause misfit dislocactions at the substrate and epilayer interface until an epilayer thickness of 200–300 μm is reached. Supporting evidence of the induced lattice compression due to N doping have been done by synchrotron white-beam x-ray topography on samples with different N-doping levels and are compared with the predicted results from the model
|
|
| 7. |
- Jacobson, H, et al.
(författare)
-
Doping-related strain in n-doped 4H-SiC crystals
- 2003
-
Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 269-272
-
Konferensbidrag (refereegranskat)abstract
- Stress in epitaxial layers due to crystal lattice mismatch directly influences growth, structure, and basic electro-physical parameters of epitaxial films and also to a large extent the degradation processes in semiconductor devices. In this paper we present a theoretical model for calculating the induced lattice compression due to N doping and the critical thickness concerning formation of misfit dislocations in homoepitaxial 4H-SiC layers with different N doping levels. For example: The model predicts that substrates with N concentration of 3E19 induce misfit dislocations when the epilayer thickness reaches similar to10 mum. Also, N doping concentration in the 1E18-1E19 range yields a strain that not will cause misfit dislocactions at the substrate and epilayer interface until an epilayer thickness of 200-300 mum is reached. Supporting evidence of the induced lattice compression due to N doping have been done by synchrotron white-beam x-ray topography on samples with different N doping level and are compared with the predicted results from the model.
|
|
| 8. |
- Jacobson, H., et al.
(författare)
-
Properties and origins of different stacking faults that cause degradation in SiC PiN diodes
- 2004
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 95:3, s. 1485-1488
-
Tidskriftsartikel (refereegranskat)abstract
- Different properties of the reported stacking faults (SFs) and that both these types of SF are present in the material after electrical degradation of pin diodes are shown. One is caused by perfect dislocations, deflected or misfit dislocation that had dissociated into two partial dislocations. The partials are assumed to be close to each other with a separation below the detection limit of the SWBT measurements. Thus, enough energy is provided and the leading partial moves away from the other partial and forms the extended SF.
|
|
| 9. |
- Jacobson, Herbert, et al.
(författare)
-
Properties of different stacking faults that cause degradation in SiC PiN diodes
- 2003
-
Ingår i: Materials Science Forum, Vols. 433-436. ; , s. 913-916
-
Konferensbidrag (refereegranskat)abstract
- The electrical degradation of 4H-SiC PiN diodes has recently attracted a large interest and is a critical material problem for high power applications. The degradation is observed as an increased forward voltage drop after forward injection operation. In this paper we present the identity, properties and origin of stacking faults with different nature that cause degradation of 4H-SiC PiN diodes.
|
|
| 10. |
- Ji, W, et al.
(författare)
-
3-D computational modeling of SiC epitaxial growth in a hot wall reactor
- 2000
-
Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 220:4, s. 560-571
-
Tidskriftsartikel (refereegranskat)abstract
- A three-dimensional computational model for chemical vapor deposition (CVD) of silicon carbide (SiC) in a hot wall reactor is developed, where the susceptor is tapered with a rectangular cross-section. The present work focuses on the advection-diffusion-reaction process in the susceptor. The precursors are propane and silane, and the carrier gas is hydrogen with mass fraction higher than 98%. Computed growth rates under different system pressures and precursor concentrations are compared with the experimental data measured on samples grown in the Linkoping CVD reactor. The gas composition distribution and the growth rate profile are shown. Dependence of the growth rate on precursor concentrations is investigated.
|
|
| 11. |
|
|
| 12. |
- Kakanakova-Georgieva, A, et al.
(författare)
-
Implementation of hot-wall MOCVD in the growth of high-quality GaN on SiC
- 2003
-
Ingår i: Materials Science Forum, Vols. 433-436. - : Trans Tech Publications. ; , s. 991-994
-
Konferensbidrag (refereegranskat)abstract
- This paper reports on the growth of high-quality GaN layers on SiC substrates by hotwall MOCVD. Use of AlN buffer with a thickness exceeding 50 nm is employed for the GaN deposition and it is found to encompass most of the misfit defects. A narrower X-ray rocking curve over asymmetric than over symmetric reflection is measured - full width at a half maximum (FWHM) of 350 arcsec vs. FWHM of 490 arcsec for 10.4 and 00.2 peaks, respectively, indicating high overall quality of the film. The free exciton photoluminescence emission peak has rather narrow FWHM of 5 meV. The typical thickness of the GaN layers is about 2 mum and they are completely depleted according to the capacitance-voltage profiling, which corresponds to estimated residual doping of less than 5x10(14) cm(-3). Only in some cases when the GaN layer is not depleted, deep level transient spectroscopy is performed and two deep traps with activation energies of 0.26 and 0.59 eV below the conduction band are measured.
|
|
| 13. |
- Lofgren, PM, et al.
(författare)
-
3-d thermal and flow modeling of hot wall epitaxial chemical vapor deposition reactors, heated by induction
- 2000
-
Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 338-3, s. 153-156
-
Tidskriftsartikel (refereegranskat)abstract
- A three dimensional computational model for temperature and flow predictions in hot wall chemical vapor deposition (CVD) reactors, heated by induction, is presented. It includes heating by a Radio Frequency (RF) coil, flow and heat transfer. Thermal radiation is modeled by a modified Monte Carlo method. Model predictions are compared to full scale experiments at Linkoping CVD reactor for epitaxial growth of silicon carbide (SIC). Both streamwise and spanwise temperature gradients are well predicted, with the temperature maximum location shifted slightly upstream compared to the measured. Additionally, the model succeeds in predicting a recirculation zone just downstream of the susceptor. It is demonstrated how thermal gradients can be greatly reduced by simple geometrical changes.
|
|
| 14. |
- Nguyen, Son Tien, 1953-, et al.
(författare)
-
Hole effective masses in 4H SiC
- 2000
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 61:16
-
Tidskriftsartikel (refereegranskat)abstract
- Optically detected cyclotron resonance (ODCR) at X-band frequency (~9.23 GHz) was used to study hole effective masses in 4H SiC. In addition to the known ODCR signal related to the cyclotron resonance (CR) of electrons we have observed an ODCR peak at a higher magnetic field, which is attributed to the CR of holes. In the vicinity of the maximum of the uppermost valence band, the constant energy surface can be considered as an ellipsoid with the principal axis along the c axis and the effective masses of the holes were determined as mh? = (0.66▒0.02)m0 and mh?=(1.75▒0.02)m0. The influence of the polaron coupling effect on the effective mass values in 4H SiC is discussed. ⌐ 2000 The American Physical Society.
|
|
| 15. |
|
|
| 16. |
- Nguyen, Tien Son, et al.
(författare)
-
Hole and electron effective masses in 6H-SiC studied by optically detected cyclotron resonance
- 2002
-
Ingår i: Materials Science Forum(ISSN 0255-5476), Vols. 389-393. - : Trans Tech Publications. ; , s. 525-528
-
Konferensbidrag (refereegranskat)abstract
- We used optically detected cyclotron resonance (ODCR) at X-band frequency (similar to9.23 GHz) to study the hole effective masses in 6H-SiC. In high-purity 6H-SiC layers, two well-resolved cyclotron resonance (CR) peaks have been observed and attributed to the CR of electrons and holes. In 6H-SiC, the uppermost valence band near its maximum is found to be parabolic with the hole transverse effective mass m(hperpendicular to)=(0.66 +/- 0.02) m(0) and the longitudinal effective mass component M-hparallel to =(1.85 +/- 0.03) m(0). The average of the electron effective mass components in the basal plane-the transversal mass-is determined as m(eperpendicular to)=(0.48 0.02) m(0). With the obtained OJDCR data we can estimate the longitudinal electron effective mass to be in the range 3-6 m(0) depending on the anisotropy of the effective mass in the basal plane.
|
|
| 17. |
- Nguyen, Tien Son, et al.
(författare)
-
Hole effective masses in 6H-SiC from optically detected cyclotron resonance
- 2002
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:4
-
Tidskriftsartikel (refereegranskat)abstract
- We used optically detected cyclotron resonance (ODCR) at X-band frequency (similar to9.23 GHz) to study the hole effective masses in 6H-SiC. In high-purity 6H-SiC layers, two well-resolved cyclotron resonance (CR) peaks have been observed and attributed to the CR of electrons and holes. Similar to 4H-SiC, the hole effective mass in 6H polytype is also found to be isotropic in the basal plane with the transverse mass m(hperpendicular to)=(0.66+/-0.02) m(0). The hole effective mass component along the c-axis is determined as m(hparallel to)=(1.85+/-0.03) m(0). From the obtained data we can estimate the electron effective mass component along the c-axis to be in the range 3-6 m(0) depending on the anisotropy of the electron effective mass in the basal plane.
|
|
| 18. |
|
|
| 19. |
- Olafsson, HO, et al.
(författare)
-
A comparison between SiO2/4H-SiC interface traps on (0001) and (1120) faces
- 2004
-
Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 457-460, s. 1305-1308
-
Tidskriftsartikel (refereegranskat)abstract
- We present thermally stimulated current (TSC) measurements made on metal-oxide-semiconductor (MOS) structures fabricated on off-axis (0001) or on-axis (1120) face n-type 4H-SiC with wet or dry oxides. The TSC measurements show the interface trap spectra of traps with activation energies in the range from 0.1 to 0.6 eV. Varying the charging and discharging conditions, we are able to distinguish between two types of traps which are both present on (0001) and (1120) face samples. One type is sensitive to the electric field during discharging but is insensitive to the charging temperature, while the other type is insensitive to the electric field during discharging but can not capture electrons at low temperatures. We find that, compared to the (0001) face, the traps at the (1120) face are shifted in energy about 0.1 eV towards higher activation energies. In all cases, For wet or dry oxides made on the (0001) or the (1120) face, the number density of traps is above 7x10(12) cm(-2).
|
|
| 20. |
- Osterman, J., et al.
(författare)
-
Scanning spreading resistance microscopy of aluminum implanted 4H-SiC
- 2003
-
Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 102:1-3, s. 128-131
-
Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Results from the application of scanning spreading resistance microscopy (SSRM) for characterization of aluminum implanted 4H-SiC are presented. The implanted profiles are investigated electrically and morphologically as a function of post-implantation anneal conditions. The method is shown to be advantageous for measuring and optimizing the activation in many aspects with respect to existing alternative techniques: it provides information of the entire depth and Al concentration range, it is unaffected by annealing induced re-growth and/or surface roughening, and requires little sample preparation. The results indicate that the apparent activation and surface roughness do not saturate in the investigated temperature range of 1500-1650 °C. Finally, an apparent activation energy for the process of 3 eV is estimated. © 2003 Elsevier B.V. All rights reserved.
|
|
| 21. |
- Robbie, K, et al.
(författare)
-
Study of contact formation by high temperature deposition of Ni on SiC
- 2000
-
Ingår i: Materials Science Forum. - 0255-5476 .- 1662-9752. ; 338-3, s. 981-984
-
Tidskriftsartikel (refereegranskat)abstract
- We report the observation, by scanning tunneling microscopy (STM), scanning electron microscopy (SEM), Auger electron spectroscopy (AES), and atomic force microscopy (AFM), of island formation on SIC during high temperature deposition and annealing of thin Ni films. Ni films with a nominal thickness of 2.5 monolayers were sputter deposited onto H-2-etched single crystal 6H-SiC (0001) substrates heated to 600 degreesC in an ultrahigh vacuum STM system. After the substrates were annealed to 800-1000 degreesC, island formation was observed by STM. The islands were 0.1-0.5 mum in diameter, similar to 30 nm high, and separated by similar to2 mum from each other, with an exceptionally flat top with a peculiar 'stitched' surface structure. A second type of island, similar to1.5 mum in diameter, similar to 10 nm high, and separated by similar to 10 mum from each other, was observed by ex situ AFM and SEM. Microspot AES showed that the first islands are composed of Ni and C, while the second islands are composed of Ni, C, and Si. AES lineshape studies showed that the carbon in both types of islands is graphitically bound as opposed to the carbon in the substrate which is carbidically bound. From comparisons to literature, we believe that the first islands are a new type of graphite intercalation compound. An indexing of Ni on the top graphite sheets is presented for each anneal temperature.
|
|
| 22. |
- Storasta, Liutauras, et al.
(författare)
-
Electrical activity of residual boron in silicon carbide
- 2002
-
Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 549-552
-
Konferensbidrag (refereegranskat)abstract
- Defects in high quality 4H silicon carbide epilayers have been studied using Deep Level Transient Spectroscopy (DLTS) and Minority Carrier Transient Spectroscopy (MCTS). Both intrinsic defect related centers HS1, Z(1/2). EH6/EH7 and shallow and deep boron centers were found. Electrical properties of the boron related traps are analyzed. Comparison with the optical decay measurements shows that boron is related to the observed lateral variations of the minority carrier lifetime in low doped 4H-SiC epilayers.
|
|
| 23. |
|
|
| 24. |
- Sörman, E., et al.
(författare)
-
Silicon vacancy related defect in 4H and 6H SiC
- 2000
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 61:4, s. 2613-2620
-
Tidskriftsartikel (refereegranskat)abstract
- We report on an irradiation-induced photoluminescence (PL) band in 4H and 6H SiC and the corresponding optically detected magnetic resonance (ODMR) signals from this band. The deep PL band has the same number of no-phonon lines as there are inequivalent sites in the respective polytype. These lines are at 1352 and 1438 meV in the case of 4H and at 1366, 1398, and 1433 meV in the case of 6H. The intensity of the PL lines is reduced after a short anneal at 750░C. ODMR measurements with above-band-gap excitation show that two spin-triplet (S=1) states with a weak axial character are detected via each PL line in these bands. One of these two triplet states can be selectively excited with the excitation energy of the corresponding PL line. These triplet signals can therefore be detected separately and only then can the well documented and characteristic hyperfine interaction of the silicon vacancy in SiC be resolved. Considering the correlation between the irradiation dose and the signal strength, the well established annealing temperature and the characteristic hyperfine pattern, we suggest that this PL band is related to the isolated silicon vacancy in 4H and 6H SiC. The spin state (S=1) implies a charge state of the vacancy with an even number of electrons. By combining the knowledge from complementary electron-spin resonance measurements and theoretical calculations we hold the neutral charge state for the strongest candidate. ⌐2000 The American Physical Society.
|
|
| 25. |
- Vetter, W.M., et al.
(författare)
-
Dislocation loops formed during the degradation of forward-biased 4H-SiC p-n junctions
- 2003
-
Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 98:3, s. 220-224
-
Tidskriftsartikel (refereegranskat)abstract
- The partial dislocations that border triangle or parallelogram-shaped stacking faults formed during the degradation of p-n diodes fabricated on 4H-SiC wafers were determined by transmission X-ray topography to be dislocation loops of Burgers vector 1/3<101¯0>, the Shockley partial type, consistent with previously reported TEM results. Some were separated from axial screw dislocations also present in the sample, indicating that the axial dislocations were not involved in the loops' nucleation, while others were seen to have interacted during their growth with the axial screw dislocations, distorting their shapes from those of ideal parallelograms. © 2003 Elsevier Science B.V. All rights reserved.
|
|
| 26. |
- Wagner, Matthias, 1969-, et al.
(författare)
-
Electronic structure of the neutral silicon vacancy in 4H and 6H SiC
- 2000
-
Ingår i: Physical review. B, Condensed matter and materials physics. - 2469-9950. ; 62:24, s. 16555-16560
-
Tidskriftsartikel (refereegranskat)abstract
- Detailed information about the electronic structure of the lowest-lying excited states and the ground state of the neutral silicon vacancy in 4H and 6H SiC has been obtained by high-resolution photoluminescence (PL), PL excitation (PLE), and Zeeman spectroscopy of both PL and PLE. The excited states and the ground states involved in the characteristic luminescence of the defect with no-phonon (NP) lines at 1.438 and 1.352 eV in 4H SiC and 1.433, 1.398, and 1.368 eV in 6H SiC are shown to be singlets. The orbital degeneracy of the excited states is lifted by the crystal field for the highest-lying NP lines corresponding to one of the inequivalent lattice sites in both polytypes, leading to the appearance of hot lines at slightly higher energies. Polarization studies of the NP lines show a different behavior for the inequivalent sites. A comparison of this behavior in the two polytypes together with parameters from spin resonance studies provides useful hints for the assignment of the no-phonon lines to the inequivalent sites. In strained samples an additional fine structure of the NP lines can be resolved. This splitting may be due to strain variations in the samples.
|
|
| 27. |
- Wagner, Matthias, et al.
(författare)
-
Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC
- 2002
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 66:15
-
Tidskriftsartikel (refereegranskat)abstract
- The silicon vacancy in its neutral charge state (V-Si) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor shell surrounding the vacancy. The complete hyperfine tensors have been determined for the V-Si(0) center residing at all inequivalent lattice sites in the two polytypes. These are compared with the parameters previously obtained for the negatively charged silicon vacancy.
|
|
| 28. |
- Wagner, Matthias, et al.
(författare)
-
The neutral silicon vacancy in SiC : Ligand hyperfine interaction
- 2002
-
Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 501-504
-
Konferensbidrag (refereegranskat)abstract
- The isolated silicon vacancy in its neutral charge state has unambiguously been confirmed in electron irradiated 4H and 6H SiC. This was achieved by the observation of the ligand hyperfine lines arising from interaction with C-13 atoms in the nearest-neighbor (NN) shell and With Si-29 atoms in the next-nearest-neighbor (NNN) shell in optically detected magnetic resonance (ODMR) experiments. The complete hyperfine tensors for all inequivalent lattice sites have been deduced and are compared to the known hyperfine parameters for the negatively charged silicon vacancy in the two polytypes.
|
|
| 29. |
- Wahab, Qamar Ul, et al.
(författare)
-
4H-and 6H-SiC MOSFETs fabricated on sloped sidewalls formed by molten KOH etching
- 2002
-
Ingår i: Materials Science Forum, Vols. 389-393. ; , s. 1215-1218
-
Konferensbidrag (refereegranskat)abstract
- Vertical 4H- and 6H-SiC MOSFETs have been fabricated on sloped sidewalls formed by molten KOH etching, which is expected to be free from the damage onto a channel region caused by a dry etching process. The slope angle could be controlled by adjusting etching temperature, and the anisotropy of inversion channel mobility was investigated. A higher inversion channel mobility and a lower threshold voltage were observed with increasing slope angle of channel region toward (1 (1) over bar 00) or (11 (2) over bar0). The highest mobility was 32 cm(2)/Vs for 6H-SiC, which is relatively high as an inversion channel mobility of UMOSFETs compared to previous works. The dependence of device performance on the slope angle and crystal orientation is discussed.
|
|
| 30. |
- Wahab, Qamar Ul, et al.
(författare)
-
Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H-SiC Schottky diodes
- 2000
-
Ingår i: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 76:19, s. 2725-2727
-
Tidskriftsartikel (refereegranskat)abstract
- Morphological defects and elementary screw dislocations in 4H-SiC were studied by high voltage Ni Schottky diodes. Micropipes were found to severely limit the performance of 4H-SiC power devices, whereas carrot-like defects did not influence the value of breakdown voltage. The screw dislocation density as determined by x-ray topography analysis under the active area of the diode was also found to directly affect the breakdown voltage. Only diodes with low density of screw dislocations and free from micropipes could block 2 kV or higher. (C) 2000 American Institute of Physics. [S0003-6951(00)01119-0].
|
|
| 31. |
- Wahab, Qamar Ul, et al.
(författare)
-
Influence of epitaxial growth and substrate induced defects on the breakdown of high-voltage 4H-SiC Schottky diodes
- 2000
-
Ingår i: Materials Science Forum(ISSN 0255-5476), Volume 338-3. - : Scientific.Net. - 0878498540 ; , s. 1175-1178
-
Konferensbidrag (refereegranskat)abstract
- The influence of morphological and structural defects on high-voltage 4H-SiC Schottky diodes was studied. Micropipes were found as severely limiting the breakdown voltage of 4H-SiC power devices, where as carrot-like defects did not influence the value of breakdown voltage. The screw dislocation density as determined by X-ray topography analysis under the active area of the diode was also found to directly affect the breakdown voltage value. Only diodes with low density of screw dislocations and free from micropipes could block 2 kV or higher.
|
|
| 32. |
- Zolnai, Z, et al.
(författare)
-
Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC
- 2004
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 96:4, s. 2406-2408
-
Tidskriftsartikel (refereegranskat)abstract
- The annealing behavior of the positively charged carbon vacancy in electron-irradiated 4H-SiC was studied. Electron paramagnetic resonance was used for the purpose of analysis. It was found that around 1000 °C, the EPR signal of the defect starts decreasing. Clear ligand hyperfine structure was also observed after annealing at 1350 °C. Results show that the EI6 center may be the positively charged carbon vacancy at the hexagonal lattice site of 4H-SiC.
|
|
| 33. |
|
|
