1. |
- John Mukkattukavil, D., et al.
(författare)
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Resonant inelastic soft x-ray scattering on LaPt 2 Si 2
- 2022
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Ingår i: Journal of physics. Condensed matter : an Institute of Physics journal. - 1361-648X .- 0953-8984. ; 34:32
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Tidskriftsartikel (refereegranskat)abstract
- X-ray absorption and resonant inelastic x-ray scattering spectra of LaPt2Si2single crystal at the Si 2pand La 4dedges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Sisanddlocal partial density of states (LPDOS), and the La spectra are due to quasi-atomic local 4fexcitations. Calculations show that Ptd-LPDOS dominates the occupied states, and a sharp localized Lafstate is found in the unoccupied states, in line with the observations.
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2. |
- John Mukkattukavil, Deepak, et al.
(författare)
-
Resonant inelastic soft x-ray scattering on LaPt2Si2
- 2022
-
Ingår i: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 34:32, s. 324003-
-
Tidskriftsartikel (refereegranskat)abstract
- X-ray absorption and resonant inelastic x-ray scattering spectra of LaPt2Si2 single crystal at the Si 2p and La 4d edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si s and d local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local 4f excitations. Calculations show that Pt d-LPDOS dominates the occupied states, and a sharp localized La f state is found in the unoccupied states, in line with the observations.
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3. |
- Mukkattukavil, Deepak John, 1993-, et al.
(författare)
-
Resonant inelastic soft x-ray scattering on LaPt2Si2
- 2022
-
Ingår i: Journal of Physics. - : Institute of Physics Publishing (IOPP). - 0953-8984 .- 1361-648X. ; 34:32
-
Tidskriftsartikel (refereegranskat)abstract
- X-ray absorption and resonant inelastic x-ray scattering spectra of LaPt2Si2 single crystal at the Si 2p and La 4d edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si s and d local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local 4f excitations. Calculations show that Pt d-LPDOS dominates the occupied states, and a sharp localized La f state is found in the unoccupied states, in line with the observations.
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