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- IVANOV, I, et al.
(författare)
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GROWTH OF EPITAXIAL ALN(0001) ON SI(111) BY REACTIVE MAGNETRON SPUTTER-DEPOSITION
- 1995
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Ingår i: JOURNAL OF APPLIED PHYSICS. - : AMER INST PHYSICS. - 0021-8979. ; 78:9, s. 5721-5726
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- 2H-AlN(0001) layers have been grown on Si(lll) by reactive magnetron sputtering from an Al target in Ar+N-2 gas mixtures at temperatures T-s=400-900 degrees C. Variations in reactive gas consumption, target voltage, and current-voltage characteristics ver
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