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Träfflista för sökning "WFRF:(J J M van Breemen Albert) srt2:(2014)"

Sökning: WFRF:(J J M van Breemen Albert) > (2014)

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1.
  • van Breemen, Albert J. J. M., et al. (författare)
  • Crossbar arrays of nonvolatile, rewritable polymer ferroelectric diode memories on plastic substrates
  • 2014
  • Ingår i: APPLIED PHYSICS EXPRESS. - : Japan Society of Applied Physics. - 1882-0778. ; 7:3
  • Tidskriftsartikel (refereegranskat)abstract
    • In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25 mu m thickness. By sandwiching this polymer blend film between rows and columns of metal electrode lines where each intersection makes up one memory cell, we obtained 1 kbit cross bar arrays with bit densities of up to 10 kbit/cm(2). (C) 2014 The Japan Society of Applied Physics
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2.
  • Khikhlovskyi, Vsevolod, et al. (författare)
  • Nanoscale Organic Ferroelectric Resistive Switches
  • 2014
  • Ingår i: The Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 118:6, s. 3305-3312
  • Tidskriftsartikel (refereegranskat)abstract
    • Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their operational mechanism. Resistive switching is shown to result from modulation of the charge injection barrier at the semiconductor-electrode interfaces. The modulation is driven by the stray field of the polarization charges in the ferroelectric phase and consequently is restricted to regions where semiconductor and ferroelectric phases exist in close vicinity. Since each semiconductor domain can individually be switched and read out, a novel, nanoscale memory element is demonstrated. An ultimate information density of similar to 30 Mb/cm(2) is estimated for this bottom-up defined memory device.
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