| 1. |
- Johansson, MKJ, et al.
(författare)
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Adsorption of C-60 on Al(111) studied with scanning tunnelling microscopy
- 1998
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Ingår i: SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0039-6028. ; 397:1-3, s. 314-321
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Scanning tunnelling microscopy has been used to study the adsorption and interactions of C-60 on Al(111) at room temperature. Initially, C-60 forms chains of molecules on the lower terraces of step edges, which indicates that the molecules have a high mob
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| 2. |
- Johansson, MKJ, et al.
(författare)
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Scanning tunneling microscopy of C-60/Al(111)-6x6: Inequivalent molecular sites and electronic structures
- 1996
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 54:19, s. 13472-13475
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- We present a scanning tunneling microscopy and spectroscopy (STM/S) study of a thermally stable, annealed monolayer of C-60 On Al(111). The C-60 molecules are arranged into a close-packed hexagonal layer of 2 root 3 x 2 root 3 periodicity with the symmetr
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| 3. |
- MAXWELL, AJ, et al.
(författare)
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C-60 ON AL(111) - COVALENT BONDING AND SURFACE RECONSTRUCTION
- 1995
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. ; 52:8
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- We present photoemission and C 1s photoabsorption data for an annealed monolayer C-60/Al(111), which show that a strong covalent bond is formed between the C-60 molecules and the substrate. Low-energy electron-diffraction and scanning tunneling microscopy
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| 4. |
- Abukawa, T, et al.
(författare)
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Anomalous diffraction effect on the surface core-level photoemission from Si(001)2x1-Cs surface
- 1998
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Ingår i: JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA. - : ELSEVIER SCIENCE BV. - 0368-2048. ; 88, s. 539-543
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The angular dependence of the Si 2p photoelectron intensity has been measured for a Cs-saturated Si(001)2 x 1 surface. A surface Si 2p component, which is attributed to the Si-dimer underneath the Cs overlayer, shows a large intensity variation as a funct
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| 5. |
- GREHK, TM, et al.
(författare)
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CLEAN AND CS-EXPOSED SI(111)ROOT-3X-ROOT-3-B SURFACE STUDIED WITH HIGH-RESOLUTION PHOTOEMISSION
- 1995
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52:15, s. 11165-11171
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Tidskriftsartikel (refereegranskat)abstract
- Both the clean and Cs-exposed Si(111)root 3X root 3R30 degrees:B surfaces have been investigated by high-resolution photoemission. In the spectra from the Si 2p level, contributions were identified from the bulk, the adatoms plus the first layer, the second and 2/3 ML of the third-layer atoms not binding to the B atoms, and, finally, the 1/3 ML of third-layer atoms binding to the boron atoms. The interaction between the Cs atoms and the surface is found to be dependent on the coverage. At low coverages the geometric and electronic structure of the Si(111)root 3X root 3R30 degrees:B interface is only to a minor degree affected by the presence of Cs on the surface. At high coverage the Cs atoms react with the surface and alter the binding configuration of the Si adatoms.
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| 6. |
- HAKANSSON, MC, et al.
(författare)
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PHOTOEMISSION-STUDY OF THE BAND-GAP ON CESIATED GE(111)1X1-AS
- 1995
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52:16, s. 11646-11649
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Tidskriftsartikel (refereegranskat)abstract
- Deposition of small amounts of cesium on the As-terminated Ge(111) surface results in population of the lowest unoccupied surface state centered around the Gamma point in the surface Brillouin zone. By using angle-resolved photoemission we have directly determined the gap between this state and the lone-pair surface state to be 0.85 eV. This result provides support for recent quasiparticle band-structure calculations.
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| 7. |
- PATTHEY, L, et al.
(författare)
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MIXED GE-SI DIMER GROWTH AT THE GE/SI(001)-(2X1) SURFACE
- 1995
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Ingår i: PHYSICAL REVIEW LETTERS. - : AMER INST PHYSICS. - 0031-9007. ; 75:13, s. 2538-2541
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- The submonolayer growth of Ge on single domain Si(001)-(2 X 1) has been studied using high resolution photoemission by monitoring the Ge 3d and Si 2p core levels as functions of coverage, electron emission angle, and annealing temperature. It is shown tha
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