| 1. |
- Lalita, J, et al.
(författare)
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Defect evolution in MeV ion-implanted silicon
- 1996
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Ingår i: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. - : ELSEVIER SCIENCE BV. - 0168-583X. ; 120:1-4, s. 27-32
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Lightly doped silicon samples of both n- and p-type, have been implanted with low doses of H, B and Si ions using energies between 1 and 6 MeV. The resulting electrically active point defects were characterized by deep level transient spectroscopy (DLTS)
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| 2. |
- LI, G, et al.
(författare)
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ZN DELTA-DOPED GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
- 1995
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Ingår i: Journal of Crystal Growth. - 0022-0248 .- 1873-5002. ; 154, s. 231-239
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Tidskriftsartikel (refereegranskat)abstract
- A number of delta-doping parameters have been changed to study their effects on the hole concentration of Zn delta-doped GaAs grown by metalorganic vapour phase epitaxy using dimethylzinc (DMZn) as a doping precursor. We observed that the hole concentration is dependent on the DMZn partial pressure but independent of the gas now velocity in the reactor. A weak effect of the delta-doping time on the hole concentration infers that the near-equilibrium between the Zn adsorption and desorption can be reached very rapidly. In the regime of the delta-doping temperatures from 600 to 700 degrees C, the Zn desorption predominantly determines the hole concentration, and the Zn desorption activation energy obtained from the Arrhenius-type plot is 2.04 eV. Below 600 degrees C, however, the hole concentration departures from the Arrhenius-type relationship with the reciprocal delta-doping temperature, indicating that some other factors start to influence the Zn delta-doping concentration.
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| 3. |
- Svensson, BG, et al.
(författare)
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Generation of vacancy-type point defects in single collision cascades during swift-ion bombardment of silicon
- 1997
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Ingår i: PHYSICAL REVIEW B-CONDENSED MATTER. - : AMER INST PHYSICS. - 0163-1829. ; 55:16, s. 10498-10507
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Tidskriftsartikel (övrigt vetenskapligt/konstnärligt)abstract
- Silicon samples of n-type have been implanted with low doses (10(7)-10(10) cm(-2)) of B-11, C-12, O-16, Si-28, Ge-74,Ge-76, and Sn-120 ions using energies between 0.4 and 8.0 MeV. Because of the low doses employed, single-collision cascades prevail, and a
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| 4. |
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