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Sökning: WFRF:(Jinno Riena) > (2021)

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1.
  • Hilfiker, Matthew, et al. (författare)
  • Anisotropic dielectric functions, band-to-band transitions, and critical points in alpha-Ga2O3
  • 2021
  • Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 118:6
  • Tidskriftsartikel (refereegranskat)abstract
    • We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an alpha -Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73eV to 8.75eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M-0-type van Hove singularities for polarization perpendicular to the c axis, E 0 , perpendicular to = 5.46 ( 6 ) eV and E 0 , perpendicular to = 6.04 ( 1 ) eV, and one direct band-to-band transition with M-1-type van Hove singularity for polarization parallel to E 0 , | | = 5.44 ( 2 ) eV. We further identify excitonic contributions with a small binding energy of 7meV associated with the lowest ordinary transition and a hyperbolic exciton at the M-1-type critical point with a large binding energy of 178meV.
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2.
  • Hilfiker, Matthew, et al. (författare)
  • High-frequency and below bandgap anisotropic dielectric constants in alpha-(AlxGa1-x)(2)O-3 (0 <= x <= 1)
  • 2021
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 119:9
  • Tidskriftsartikel (refereegranskat)abstract
    • A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum alpha-(AlxGa1-x)(2)O-3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam epitaxy on m-plane sapphire. The spectroscopic ellipsometry measurements were performed at multiple azimuthal angles to resolve the uniaxial dielectric properties. A Cauchy dispersion model was applied, and high-frequency dielectric constants are determined for polarization perpendicular (epsilon(infinity,perpendicular to)) and parallel (epsilon(infinity,parallel to)) to the thin film c-axis. The optical birefringence is negative throughout the composition range, and the overall index of refraction substantially decreases upon incorporation of Al. We find small bowing parameters of the highfrequency dielectric constants with b(perpendicular to) = 0:386 and b(parallel to) = 0:307. Published under an exclusive license by AIP Publishing.
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  • Resultat 1-2 av 2
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refereegranskat (2)
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Schubert, Mathias (2)
Stokey, Megan (2)
Kilic, Ufuk (2)
Korlacki, Rafal (2)
Hilfiker, Matthew (2)
Jinno, Riena (2)
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Cho, Yongjin (2)
Xing, Huili Grace (2)
Jena, Debdeep (2)
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