| 1. |
- Gale, S. J., et al.
(författare)
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Band termination spectroscopy in 157Er
- 1995
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Ingår i: Journal of Physics G: Nuclear and Particle Physics. - 0954-3899. ; 21:2, s. 193-213
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Tidskriftsartikel (refereegranskat)abstract
- The level scheme of 157Er has been extended from a spin region where the nucleus behaves as a prolate rotor to a region where the spin is produced by the alignment of all or most of the available valence nucleons along the symmetry axis of a weakly deformed oblate shape. The level scheme was established at high spin using up to four-fold gamma -ray coincidences detected in the Eurogam spectrometer following the reaction 114Cd( 48Ca,5n)157Er at a bombarding energy of 210 MeV. Particularly favoured states have been established at IK=69/2+, 81/2+, 71/2+, 77/2-, 87-/2 and 89-/2. Specific single-particle configurations are assigned to these special states by comparison with cranked Nilsson-Strutinsky calculations. These states are related to structures observed in the neighbouring nuclei 158Er and 157Ho. These data provide the spectrum of single-particle states for the lowest lying valence orbitals above the 146Gd closed core.
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| 2. |
- Ashwin, M.J., et al.
(författare)
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The bonding of CAs acceptors in InxGa1-xAs grown by chemical beam epitaxy using carbon tetrabromide as the source of carbon
- 1996
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 80:12, s. 6754-6760
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Tidskriftsartikel (refereegranskat)abstract
- InxGa1-xAs layers (0≤x≤0.37) doped with carbon (>1020 cm-3) were grown on semi-insulating GaAs substrates by chemical beam epitaxy using carbon tetrabromide (CBr4) as the dopant source. Hall measurements imply that all of the carbon was present as CAs for values x up to 0.15. The C acceptors were passivated by exposing samples to a radio frequency hydrogen plasma for periods of up to 6 h. The nearest-neighbor bonding configurations of CAs were investigated by studying the nondegenerate antisymmetric hydrogen stretch mode (A-1 symmetry) and the symmetric XH mode (A+1 symmetry) of the H-CAs pairs using IR absorption and Raman scattering, respectively. Observed modes at 2635 and 450 cm-1 had been assigned to passivated Ga4CAs clusters. New modes at 2550 and 430 cm-1 increased in strength with increasing values of x and are assigned to passivated InGa3CAs clusters. These results were compared with ab initio local density functional theory. Modes due to AlInGaCAs clusters were detected in samples containing grown in Al and In. These results demonstrate that for InGaAs, CBr4 is an efficient C doping source since both In-CAs bonds as well as Ga-CAs bonds are formed, whereas there is no evidence for the formation of In-CAs bonds in samples doped with C derived from trimethylgallium or solid sources
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| 3. |
- Wagner, J, et al.
(författare)
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Di-Carbon defects in annealed highly carbon doped GaAs
- 1997
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 78:1, s. 74-77
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Tidskriftsartikel (refereegranskat)abstract
- Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and 1674 cm -1 in GaAs codoped with 12C and 13C after annealing at 850 °C with concomitant loss of vibrational scattering from CAs. The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced CAs) atom by an undisplaced CAs acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and 1788 cm -1 from a different C-C complex.
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