| 1. |
- Babin, Charles, et al.
(författare)
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Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence
- 2022
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Ingår i: Nature Materials. - : NATURE PORTFOLIO. - 1476-1122 .- 1476-4660. ; 21, s. 67-73
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Tidskriftsartikel (refereegranskat)abstract
- Colour centres are a promising quantum information platform, but coherence degradation after integration in nanostructures has hindered scalability. Here, the authors show that waveguide-integrated V-Si centres in SiC maintain spin-optical coherences, enabling nuclear high-fidelity spin qubit operations. Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing compatible with nanofabrication processes and device control used by the semiconductor industry. System scalability towards large-scale quantum networks demands integration into nanophotonic structures with efficient spin-photon interfaces. However, degradation of the spin-optical coherence after integration in nanophotonic structures has hindered the potential of most colour centre platforms. Here, we demonstrate the implantation of silicon vacancy centres (V-Si) in SiC without deterioration of their intrinsic spin-optical properties. In particular, we show nearly lifetime-limited photon emission and high spin-coherence times for single defects implanted in bulk as well as in nanophotonic waveguides created by reactive ion etching. Furthermore, we take advantage of the high spin-optical coherences of V-Si centres in waveguides to demonstrate controlled operations on nearby nuclear spin qubits, which is a crucial step towards fault-tolerant quantum information distribution based on cavity quantum electrodynamics.
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| 2. |
- Griessl, René, et al.
(författare)
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A Scalable, Heterogeneous Hardware Platform for Accelerated AIoT based on Microservers
- 2023
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Ingår i: Shaping the Future of IoT with Edge Intelligence How Edge Computing Enables the Next Generation of IoT Applications. - 9788770040273 ; , s. 179-196
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Bokkapitel (övrigt vetenskapligt/konstnärligt)abstract
- Performance and energy efficiency are key aspects of next-generation AIoT hardware. This chapter presents a scalable, heterogeneous hardware platform for accelerated AIoT based on microserver technology. It integrates several accelerator platforms based on technologies like CPUs, embedded GPUs, FPGAs, or specialized ASICs, supporting the full range of the cloud−edgeIoT continuum. The modular microserver approach enables the integrationof different, heterogeneous accelerators into one platform. Benchmarking the various accelerators takes performance, energy efficiency, and accuracy into account. The results provide a solid overview of available accelerator solutions and guide hardware selection for AIoT applications from the far edge to the cloud.
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| 3. |
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| 4. |
- Heiler, Jonah, et al.
(författare)
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Spectral stability of V2 centres in sub-micron 4H-SiC membranes
- 2024
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Ingår i: NPJ QUANTUM MATERIALS. - : NATURE PORTFOLIO. - 2397-4648. ; 9:1
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Tidskriftsartikel (refereegranskat)abstract
- Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences. However, recent efforts towards maximising the photonic efficiency via integration into nanophotonic structures proved to be challenging due to reduced spectral stabilities. Here, we provide a large-scale systematic investigation on silicon vacancy centres in thin silicon carbide membranes with thicknesses down to 0.25 mu m. Our membrane fabrication process involves a combination of chemical mechanical polishing, reactive ion etching, and subsequent annealing. This leads to highly reproducible membranes with roughness values of 3-4 A, as well as negligible surface fluorescence. We find that silicon vacancy centres show close-to lifetime limited optical linewidths with almost no signs of spectral wandering down to membrane thicknesses of similar to 0.7 mu m. For silicon vacancy centres in thinner membranes down to 0.25 mu m, we observe spectral wandering, however, optical linewidths remain below 200 MHz, which is compatible with spin-selective excitation schemes. Our work clearly shows that silicon vacancy centres can be integrated into sub-micron silicon carbide membranes, which opens the avenue towards obtaining the necessary improvements in photon extraction efficiency based on nanophotonic structuring.
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| 5. |
- Hesselmeier, Erik, et al.
(författare)
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Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide
- 2024
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 132:9
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Tidskriftsartikel (refereegranskat)abstract
- Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. Here we probe and characterize the particularly rich nuclear-spin environment around single silicon vacancy color centers (V2) in 4H-SiC. By using the electron spin-3/2 qudit as a four level sensor, we identify several sets of Si29 and C13 nuclear spins through their hyperfine interaction. We extract the major components of their hyperfine coupling via optical detected nuclear magnetic resonance, and assign them to shells in the crystal via the density function theory simulations. We utilize the ground-state level anticrossing of the electron spin for dynamic nuclear polarization and achieve a nuclear-spin polarization of up to 98±6%. We show that this scheme can be used to detect the nuclear magnetic resonance signal of individual spins and demonstrate their coherent control. Our work provides a detailed set of parameters and first steps for future use of SiC as a multiqubit memory and quantum computing platform.
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| 6. |
- Koerber, Jonathan, et al.
(författare)
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Fluorescence Enhancement of Single V2 Centers in a 4H-SiC Cavity Antenna
- 2024
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Ingår i: Nano Letters. - : AMER CHEMICAL SOC. - 1530-6984 .- 1530-6992. ; 24:30, s. 9289-9295
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Tidskriftsartikel (refereegranskat)abstract
- Solid state quantum emitters are a prime candidate in distributed quantum technologies since they inherently provide a spin-photon interface. An ongoing challenge in the field, however, is the low photon extraction due to the high refractive index of typical host materials. This challenge can be overcome using photonic structures. Here, we report the integration of V2 centers in a cavity-based optical antenna. The structure consists of a silver-coated, 135 nm-thin 4H-SiC membrane functioning as a planar cavity with a broadband resonance yielding a theoretical photon collection enhancement factor of similar to 34. The planar geometry allows us to identify over 20 single V2 centers at room temperature with a mean (maximum) count rate enhancement factor of 9 (15). Moreover, we observe 10 V2 centers with a mean absorption line width below 80 MHz at cryogenic temperatures. These results demonstrate a photon collection enhancement that is robust to the lateral emitter position.
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| 7. |
- Krumrein, Marcel, et al.
(författare)
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Precise Characterization of a Waveguide Fiber Interface in Silicon Carbide
- 2024
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Ingår i: ACS Photonics. - : AMER CHEMICAL SOC. - 2330-4022.
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Tidskriftsartikel (refereegranskat)abstract
- Spin-active optical emitters in silicon carbide are excellent candidates toward the development of scalable quantum technologies. However, efficient photon collection is challenged by undirected emission patterns from optical dipoles, as well as low total internal reflection angles due to the high refractive index of silicon carbide. Based on recent advances with emitters in silicon carbide waveguides, we now demonstrate a comprehensive study of nanophotonic waveguide-to-fiber interfaces in silicon carbide. We find that across a large range of fabrication parameters, our experimental collection efficiencies remain above 90%. Further, by integrating silicon vacancy color centers into these waveguides, we demonstrate an overall photon count rate of 181 kilo-counts per second, which is an order of magnitude higher compared to standard setups. We also quantify the shift of the ground state spin states due to strain fields, which can be introduced by waveguide fabrication techniques. Finally, we show coherent electron spin manipulation with waveguide-integrated emitters with state-of-the-art coherence times of T-2 similar to 42 mu s. The robustness of our methods is very promising for quantum networks based on multiple orchestrated emitters.
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| 8. |
- Liu, Di, et al.
(författare)
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The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics
- 2024
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Ingår i: NPJ QUANTUM INFORMATION. - : NATURE PORTFOLIO. - 2056-6387. ; 10:1
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Tidskriftsartikel (refereegranskat)abstract
- The negatively charged silicon vacancy center (VSi-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\rm{V}}}_{{\rm{Si}}}<^>{-}$$\end{document}) in silicon carbide (SiC) is an emerging color center for quantum technology covering quantum sensing, communication, and computing. Yet, limited information currently available on the internal spin-optical dynamics of these color centers prevents us from achieving the optimal operation conditions and reaching the maximum performance especially when integrated within quantum photonics. Here, we establish all the relevant intrinsic spin dynamics of the VSi-\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${{\rm{V}}}_{{\rm{Si}}}<^>{-}$$\end{document} center at cubic lattice site (V2) in 4H-SiC by an in-depth electronic fine structure modeling including the intersystem-crossing and deshelving mechanisms. With carefully designed spin-dependent measurements, we obtain all the previously unknown spin-selective radiative and non-radiative decay rates. To showcase the relevance of our work for integrated quantum photonics, we use the obtained rates to propose a realistic implementation of time-bin entangled multi-photon GHZ and cluster state generation. We find that up to three-photon GHZ or cluster states are readily within reach using the existing nanophotonic cavity technology.
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| 9. |
- Lukin, Daniil M., et al.
(författare)
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Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
- 2020
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Ingår i: NPJ QUANTUM INFORMATION. - : NATURE PUBLISHING GROUP. - 2056-6387. ; 6:1
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Tidskriftsartikel (refereegranskat)abstract
- The ability to shape photon emission facilitates strong photon-mediated interactions between disparate physical systems, thereby enabling applications in quantum information processing, simulation and communication. Spectral control in solid state platforms such as color centers, rare earth ions, and quantum dots is particularly attractive for realizing such applications on-chip. Here we propose the use of frequency-modulated optical transitions for spectral engineering of single photon emission. Using a scattering-matrix formalism, we find that a two-level system, when modulated faster than its optical lifetime, can be treated as a single-photon source with a widely reconfigurable photon spectrum that is amenable to standard numerical optimization techniques. To enable the experimental demonstration of this spectral control scheme, we investigate the Stark tuning properties of the silicon vacancy in silicon carbide, a color center with promise for optical quantum information processing technologies. We find that the silicon vacancy possesses excellent spectral stability and tuning characteristics, allowing us to probe its fast modulation regime, observe the theoretically-predicted two-photon correlations, and demonstrate spectral engineering. Our results suggest that frequency modulation is a powerful technique for the generation of new light states with unprecedented control over the spectral and temporal properties of single photons.
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| 10. |
- Menkveld, Albert J., et al.
(författare)
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Nonstandard Errors
- 2024
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Ingår i: JOURNAL OF FINANCE. - : Wiley-Blackwell. - 0022-1082 .- 1540-6261. ; 79:3, s. 2339-2390
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Tidskriftsartikel (refereegranskat)abstract
- In statistics, samples are drawn from a population in a data-generating process (DGP). Standard errors measure the uncertainty in estimates of population parameters. In science, evidence is generated to test hypotheses in an evidence-generating process (EGP). We claim that EGP variation across researchers adds uncertainty-nonstandard errors (NSEs). We study NSEs by letting 164 teams test the same hypotheses on the same data. NSEs turn out to be sizable, but smaller for more reproducible or higher rated research. Adding peer-review stages reduces NSEs. We further find that this type of uncertainty is underestimated by participants.
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| 11. |
- Mika, Kevin, et al.
(författare)
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VEDLIoT: Next generation accelerated AIoT systems and applications
- 2023
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Ingår i: Proceedings of the 20th ACM International Conference on Computing Frontiers 2023, CF 2023. - 9798400701405
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Konferensbidrag (refereegranskat)abstract
- The VEDLIoT project aims to develop energy-efficient Deep Learning methodologies for distributed Artificial Intelligence of Things (AIoT) applications. During our project, we propose a holistic approach that focuses on optimizing algorithms while addressing safety and security challenges inherent to AIoT systems. The foundation of this approach lies in a modular and scalable cognitive IoT hardware platform, which leverages microserver technology to enable users to configure the hardware to meet the requirements of a diverse array of applications. Heterogeneous computing is used to boost performance and energy efficiency. In addition, the full spectrum of hardware accelerators is integrated, providing specialized ASICs as well as FPGAs for reconfigurable computing. The project's contributions span across trusted computing, remote attestation, and secure execution environments, with the ultimate goal of facilitating the design and deployment of robust and efficient AIoT systems. The overall architecture is validated on use-cases ranging from Smart Home to Automotive and Industrial IoT appliances. Ten additional use cases are integrated via an open call, broadening the range of application areas.
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| 12. |
- Morioka, Naoya, et al.
(författare)
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Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
- 2020
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Ingår i: Nature Communications. - : NATURE PUBLISHING GROUP. - 2041-1723. ; 11:1
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Tidskriftsartikel (refereegranskat)abstract
- Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting zero-phonon line photons, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the systems intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the systems spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification. Defects in silicon carbide can act as single photon sources that also have the benefit of a host material that is already used in electronic devices. Here the authors demonstrate that they can control the distinguishability of the emitted photons by changing the defect spin state.
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| 13. |
- Morioka, Naoya, et al.
(författare)
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Spin-Optical Dynamics and Quantum Efficiency of a Single V1 Center in Silicon Carbide
- 2022
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Ingår i: Physical Review Applied. - : AMER PHYSICAL SOC. - 2331-7019. ; 17:5
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Tidskriftsartikel (refereegranskat)abstract
- Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integration into nanophotonic resonators. Recently, silicon vacancy centers in silicon carbide have been identified as a promising system with excellent spin and optical properties. Here, we fully study the spin-optical dynamics of the single silicon vacancy center at hexagonal lattice sites, namely V1, in 4H-polytype silicon carbide. By utilizing resonant and above-resonant sublifetime pulsed excitation, we determine spin-dependent excited-state lifetimes and intersystem-crossing rates. Our approach to inferring the intersystem-crossing rates is based on all-optical pulsed initialization and readout scheme, and is applicable to spin-active color centers with similar dynamics models. In addition, the optical transition dipole strength and the quantum efficiency of V1 defect are evaluated based on coherent optical Rabi measurement and local-field calibration employing electric field simulation. The measured rates well explain the results of spin-state polarization dynamics, and we further discuss the altered photoemission dynamics in resonant enhancement structures such as radiative lifetime shortening and Purcell enhancement. By providing a thorough description of the V1 center???s spin-optical dynamics, our work provides deep understanding of the system, which guides implementations of scalable quantum applications based on silicon vacancy centers in silicon carbide.
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| 14. |
- Nagy, Roland, et al.
(författare)
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Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
- 2021
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 118:14
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Tidskriftsartikel (refereegranskat)abstract
- Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication, and sensing. Realizing scalability and increasing application complexity require entangling multiple individual systems, e.g., via photon interference in an optical network. However, most solid-state emitters show relatively broad spectral distributions, which hinders optical interference experiments. Here, we demonstrate that silicon vacancy centers in semiconductor silicon carbide (SiC) provide a remarkably small natural distribution of their optical absorption/emission lines despite an elevated defect concentration of approximate to 0.43 mu m - 3. In particular, without any external tuning mechanism, we show that only 13 defects have to be investigated until at least two optical lines overlap within the lifetime-limited linewidth. Moreover, we identify emitters with overlapping emission profiles within diffraction-limited excitation spots, for which we introduce simplified schemes for the generation of computationally relevant Greenberger-Horne-Zeilinger and cluster states. Our results underline the potential of the CMOS-compatible SiC platform toward realizing networked quantum technology applications.
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| 15. |
- Nguyen, Son Tien, et al.
(författare)
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Developing silicon carbide for quantum spintronics
- 2020
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Ingår i: Applied Physics Letters. - : AMER INST PHYSICS. - 0003-6951 .- 1077-3118. ; 116:19
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Tidskriftsartikel (refereegranskat)abstract
- In current long-distance communications, classical information carried by large numbers of particles is intrinsically robust to some transmission losses but can, therefore, be eavesdropped without notice. On the other hand, quantum communications can provide provable privacy and could make use of entanglement swapping via quantum repeaters to mitigate transmission losses. To this end, considerable effort has been spent over the last few decades toward developing quantum repeaters that combine long-lived quantum memories with a source of indistinguishable single photons. Multiple candidate optical spin qubits in the solid state, including quantum dots, rare-earth ions, and color centers in diamond and silicon carbide (SiC), have been developed. In this perspective, we give a brief overview on recent advances in developing optically active spin qubits in SiC and discuss challenges in applications for quantum repeaters and possible solutions. In view of the development of different material platforms, the perspective of SiC spin qubits in scalable quantum networks is discussed.
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| 16. |
- Singh, Harpreet, et al.
(författare)
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Characterization of single shallow silicon-vacancy centers in 4H-SiC
- 2023
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Ingår i: Physical Review B. - : AMER PHYSICAL SOC. - 2469-9950 .- 2469-9969. ; 107:13
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Tidskriftsartikel (refereegranskat)abstract
- Shallow negatively charged silicon-vacancy centers have applications in magnetic quantum sensing and other quantum applications. Vacancy centers near the surface (within 100 nm) have different spin relaxation rates and optical spin polarization, affecting the optically detected magnetic resonance (ODMR) signal. This makes it essential to characterize these centers. Here we present the relevant spin properties of such centers. ODMR with a contrast of up to 6%, which is better than the state of the art, allowed us to determine the zero-field splitting, which is relevant for most sensing applications. We also present intensity-correlation data to verify that the signal originates from a single center and to extract transition rates between different electronic states.
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| 17. |
- Udvarhelyi, Peter, et al.
(författare)
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Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC
- 2020
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Ingår i: Physical Review Applied. - : AMER PHYSICAL SOC. - 2331-7019. ; 13:5
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Tidskriftsartikel (refereegranskat)abstract
- Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum-technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by focusing on the two silicon-vacancy qubits, V1 and V2, in 4H-SiC. We apply density-functional theory beyond the Born-Oppenheimer approximation to describe the temperature-dependent mixing of electronic excited states assisted by phonons. We obtain a polaronic gap of around 5 and 22 meV for the V1 and V2 centers, respectively, which results in a significant difference in the temperature-dependent dephasing and zero-field splitting of the excited states, which explains recent experimental findings. We also compute how crystal deformations affect the zero-phonon line of these emitters. Our predictions are important ingredients in any quantum applications of these qubits sensitive to these effects.
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| 18. |
- White, Alexander D., et al.
(författare)
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Static and Dynamic Stark Tuning of the Silicon Vacancy in Silicon Carbide
- 2020
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Ingår i: 2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO). - : IEEE. - 9781943580767
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Konferensbidrag (refereegranskat)abstract
- We present the DC Stark tuning of single Silicon Vacancies in SiC. We demonstrate static tuning across 200 GHz, exceeding the inhomogenous broadening, and dynamic tuning on timescales shorter than the optical decay rate. (C) 2020 The Author(s)
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