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| 2. |
- Adell, M., et al.
(författare)
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Photoemission study of the valence band offset between low temperature GaAs and (GaMn)As
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:17
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Tidskriftsartikel (refereegranskat)abstract
- Using synchrotron based photoelectron spectroscopy (GaMn) AsGaAs interfaces prepared in situ by low temperature molecular beam epitaxy have been studied. No band offset between the two systems is observed. The continuous transition is explained as an effect of dilution of the (GaMn)As by GaAs adlayers.
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| 3. |
- Glover, C. J., et al.
(författare)
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Stationary and dispersive features in resonant inelastic soft X-ray scattering at the Ge 3p resonances
- 2009
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Ingår i: Journal of Electron Spectroscopy and Related Phenomena. - : Elsevier BV. - 0368-2048 .- 1873-2526. ; 173:2-3, s. 103-107
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Tidskriftsartikel (refereegranskat)abstract
- Resonant inelastic soft X-ray scattering at the 3p resonances in crystalline Ge is presented. Both stationary and dispersive features are observed in a wide energy range above as well as below the ionization limits. These observations are in agreement with theoretical predictions based on a two-step model where the initially excited electron has no influence on the emission step. Excess population of states in the conduction band is found, and discussed in terms of attosecond electron dynamics. (c) 2009 Elsevier B.V. All rights reserved.
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| 6. |
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| 7. |
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| 8. |
- Stanciu, V., et al.
(författare)
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Influence of annealing parameters on the ferromagnetic properties of optimally passivated (Ga,Mn)As epilayers
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 72:12
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Tidskriftsartikel (refereegranskat)abstract
- The influence of annealing parameters—temperature (Ta) and time (ta)—on the magnetic properties of As-capped (Ga,Mn)As epitaxial thin films has been investigated. The dependence of the transition temperature (TC) on ta marks out two regions. The TC peak behavior, characteristic of the first region, is more pronounced for thick samples, while for the second ("saturated") region the effect of ta is more pronounced for thin samples. A right choice of the passivation medium, growth conditions along with optimal annealing parameters routinely yield TC-values of ~150 K and above, regardless of the thickness of the epilayers
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| 9. |
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| 11. |
- Adell, Martin, et al.
(författare)
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Postgrowth annealing of (Ga,Mn) As under As capping: An alternative way to increase T-C
- 2005
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86, s. 112501-
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Tidskriftsartikel (refereegranskat)abstract
- In situ postgrowth annealing of (Ga,Mn)As layers under As capping is adequate for achieving high Curie temperatures (T-C) in a similar way as ex situ annealing in air or in N-2 atmosphere practiced earlier. Thus, the first efforts give an increase of T-C from 68 to 145 K after 2 h annealing at 180 degrees C. These data, in combination with lattice parameter determinations and photoemission results, show that the As capping acts as an efficient sink for diffusing Mn interstitials.
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| 12. |
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| 13. |
- Szamota-Leandersson, Karolina, et al.
(författare)
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Creation of a metallic channel at the Sn/InAs(111)B surface studied using synchrotron-radiation photoelectron spectroscopy
- 2006
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 74:205406
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Tidskriftsartikel (refereegranskat)abstract
- The properties of a Sn-induced two-dimensional electron gas at the As-terminated InAs(111)B(1x1) surface was studied by synchrotron radiation photoelectron spectroscopy. The two-dimensional electron gas reveals itself via a narrow structure at the Fermi level, visible close to normal emission for tin coverage in the range 0.5 to 2 monolayers. Although this electron gas exhibits properties that in several respects resemble those of intrinsic charge accumulation layers on free InAs surfaces, our observations suggest that the present electron gas is much more linked to the Sn adlayer.
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