| 1. |
- Dupertuis, M A, et al.
(författare)
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Symmetries and the Polarized Optical Spectra of Exciton Complexes in Quantum Dots
- 2011
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 107:12, s. 127403-
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Tidskriftsartikel (refereegranskat)abstract
- A systematic and simple theoretical approach is proposed to analyze true degeneracies and polarized decay patterns of exciton complexes in semiconductor quantum dots. The results provide reliable spectral signatures for efficient symmetry characterization, and predict original features for low C(2 nu) and high C(3 nu) symmetries. Excellent agreement with single quantum dot spectroscopy of real pyramidal InGaAs/AlGaAs quantum dots grown along [111] is demonstrated. The high sensitivity of biexciton quantum states to exact high symmetry can be turned into an efficient uninvasive postgrowth selection procedure for quantum entanglement applications.
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| 2. |
- Karlsson, Fredrik, et al.
(författare)
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Fine structure of exciton complexes in high-symmetry quantum dots: Effects of symmetry breaking and symmetry elevation
- 2010
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Ingår i: PHYSICAL REVIEW B. - : American Physical Society. - 1098-0121. ; 81:16, s. 161307-
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Tidskriftsartikel (refereegranskat)abstract
- Quantum dots (QDs) of high symmetry (e.g., C-3 nu) have degenerate bright exciton states, unlike QDs of C-2 nu symmetry, making them intrinsically suitable for the generation of entangled photon pairs. Deviations from C-3 nu symmetry are detected in real QDs by polarization-resolved photoluminescence spectroscopy in side-view geometry of InGaAs/AlGaAs dots formed in tetrahedral pyramids. The theoretical analysis reveals both an additional symmetry plane and weak symmetry breaking, as well as the interplay with electron-hole and hole-hole exchange interactions manifested by the excitonic fine structure.
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| 3. |
- Karlsson, K Fredrik, et al.
(författare)
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Symmetry Elevation and Symmetry Breaking : Keys to Describe and Explain Excitonic Complexes in Semiconductor Quantum Dots
- 2011
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Ingår i: AIP Conference Proceedings. - : AIP. - 0094-243X.
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Konferensbidrag (refereegranskat)abstract
- The results of a group theoretical analysis of the excitonic fine structure are presented and compared with spectroscopic data on single quantum dots. The spectral features reveal the signatures of a symmetry higher than the crystal symmetry (C 3v ). A consistent picture of the fine structure patterns for various exciton complexes is obtained with group theory and the concepts of symmetry elevation and symmetry breaking.
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| 4. |
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| 5. |
- Pelucchi, E, et al.
(författare)
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Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures
- 2011
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 83, s. 205409-1-205409-12
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Tidskriftsartikel (refereegranskat)abstract
- We present a model for the interplay between the fundamental phenomena responsible for the formation of nanostructures by metalorganic vapor phase epitaxy on patterned (001)/(111)B GaAs substrates. Experiments have demonstrated that V-groove quantum wires and pyramidal quantum dots form as a consequence of a self-limiting profile that develops, respectively, at the bottom of V-grooves and inverted pyramids. Our model is based on a system of reaction-diffusion equations, one for each crystallographic facet that defines the pattern, and include the group III precursors, their decomposition and diffusion kinetics (for which we discuss the experimental evidence), and the subsequent diffusion and incorporation kinetics of the group-III atoms released by the precursors. This approach can be applied to any facet configuration, including pyramidal quantum dots, but we focus on the particular case of V-groove templates and offer an explanation for the self-limited profile and the Ga segregation observed in the V-groove. The explicit inclusion of the precursor decomposition kinetics and the diffusion of the atomic species revises and generalizes the earlier work of Biasiol et al. [Biasiol et al., Phys. Rev. Lett. 81, 2962 (1998); Phys. Rev. B 65, 205306 (2002)] and is shown to be essential for obtaining a complete description of self-limiting growth. The solution of the system of equations yields spatially resolved adatom concentrations, from which average facet growth rates are calculated. This provides the basis for determining the conditions that yield self-limiting growth. The foregoing scenario, previously used to account for the growth modes of vicinal GaAs(001) and the step-edge profiles on the ridges of vicinal surfaces patterned with V-grooves during metalorganic vapor-phase epitaxy, can be used to describe the morphological evolution of any template composed of distinct facets.
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| 6. |
- Zhu, Q., et al.
(författare)
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Pyramidal GaAs/AlzGa1-zAs quantum wire/dot systems with controlled heterostructure potential
- 2010
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Ingår i: Phys. Rev. B. ; 82
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Tidskriftsartikel (refereegranskat)abstract
- The structural and optical properties of controlled-heterostructure-potential, low-dimensional GaAs/AlGaAs nanostructures self-formed during organometallic chemical vapor deposition in tetrahedral pyramids etched in (111)B-GaAs substrates, are investigated using electron microscopy, cathodoluminescence, photoluminescence (PL), photon correlation spectroscopy, and theoretical modeling. Quantum wires/dots with AlGaAs cores with growth-controlled dimensions are formed, with a system of well-defined, low-dimensional nanostructure barriers around them. Transitions between carrier states confined in the AlGaAs quantum wires and dots are identified in the PL spectra, with features in good agreement with model calculations. Emission of single-photons and bunched-photon pairs is observed using temporal photon correlation spectroscopy. This self-formed nanostructure system provides new ways for shaping low-dimensional quantum structures and their heterostructure environment.
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| 7. |
- Atlasov, K. A., et al.
(författare)
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Site-controlled quantum-wire and quantum-dot photonic-crystal microcavity lasers
- 2010
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Ingår i: Photonics Society Winter Topicals Meeting Series (WTM), 2010 IEEE. - 9781424452415 ; , s. 149-150
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Konferensbidrag (refereegranskat)abstract
- Based on site- and energy-controlled quantum wires (QWR) and quantum dots (QD), diverse photonic-crystal microcavity laser systems are proposed and discussed. Results demonstrating QWR lasing, cavity coupling and QD ordered arrays are presented.
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| 8. |
- Szeszko, J., et al.
(författare)
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Exciton confinement and trapping dynamics in double-graded-bandgap quantum nanowires
- 2012
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:21
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Tidskriftsartikel (refereegranskat)abstract
- We fabricate and study quantum dot structures incorporating quasi-one-dimensional excited states. The structures are realized by graded bandgap GaAs/AlGaAs quantum wires self-formed inside inverted tetrahedral pyramids. The ground state transitions exhibit typical characteristics of fully confined excitons, including single photon emission. Efficient carrier thermalization and relaxation, as well as correlated photon emission is observed also among the excited states, indicating the formation of quasi-one-dimensional multi-exciton states. These structures offer interesting possibilities for collecting and directing charge carriers towards heterostructured potential traps.
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| 9. |
- Troncale, V., et al.
(författare)
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Dynamic switching of hole character and single photon polarization using the quantum confined Stark effect in quantum dot-in-dot structures
- 2010
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Ingår i: Nanotechnology. - : Institute of Physics; 1999. - 0957-4484 .- 1361-6528. ; 21:28, s. 285202-
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Tidskriftsartikel (refereegranskat)abstract
- The engineering of the three-dimensional (3D) heterostructure potential in GaAs/AlGaAs pyramidal quantum dot-in-dots (DiDs) provides control over the valence band symmetry and hence on the polarization of the emitted photons. We propose a technique for dynamic switching of hole character and photon polarization in DiDs by means of an applied electric field. The structural parameters required for producing this effect are discussed. Asymmetric DiDs are found to be particularly suitable for obtaining switching with fields smaller than 1 kV cm(-1). The proposed device enables generation of single photons with dynamic control on the photon polarization, with potential applications in quantum information technology.
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