| 1. |
- Karlsson, Jonas S, et al.
(författare)
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AMOS.v1 User's Guide
- 1994
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Rapport (övrigt vetenskapligt/konstnärligt)
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| 2. |
- Karlsson, Peter R., 1963, et al.
(författare)
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A direct extraction algorithm for a submicron MOS transistor model
- 1993
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Ingår i: Proceedings of the International Conference on Microelectronic Test Structures ICMTS. - 0780308573 ; 1993:22-25 March 1993
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Konferensbidrag (refereegranskat)abstract
- A four-point technique for direct extraction of the linear region model parameters of submicron transistors is presented. The choice of data points for minimizing sensitivity to measurement noise is discussed. For a submicron transistor model where a second order mobility reduction factor is included to model the quadratic gate voltage dependence, direct extraction of the four linear-region parameters is possible using only four data points. This means that efficient parameter extraction is facilitated and that this type of submicron transistor model can be used in production control.
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| 3. |
- Karlsson, Peter R., 1963, et al.
(författare)
-
A direct method to extract effective geometries and series resistances of MOS transistors
- 1994
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Ingår i: Proceedings of the International Conference on Microelectronic Test Structures ICMTS. - 0780317572 ; 1994:22-25 March 1994
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Konferensbidrag (refereegranskat)abstract
- A new direct method for rapid characterization of MOS transistor effective geometries and series resistances is presented. The method only requires devices of four different sizes. Also presented is a new linear regression technique that offers a natural extension of the method to any arbitrary number of devices. Finally, the channel width dependence of the mobility reduction factor is shown to be explained by the electrical broadening of the channel.
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| 4. |
- Karlsson, Peter R., 1963, et al.
(författare)
-
A fast method of parameter extraction for MOS transistors
- 1990
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Ingår i: European Solid State Device Research Conference ESSDERC. - 0750300655 ; 1990:10-13 Sept. 1990
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Konferensbidrag (refereegranskat)abstract
- A fast method of parameter extraction using a limited number of data points is developed for the SPICE level 3 MOS transistor model. Analytical expressions or numerical equations that converge fast are used to calculate the parameters and all interactions between parameters are taken into account. Proper selection of data points ensures physically reasonable values for most extracted parameters.
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| 5. |
- Karlsson, Peter R., 1963, et al.
(författare)
-
An analytical strategy for fast extraction of MOS transistor DC parameters applied to the SPICE MOS3 and BSIM models
- 1992
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Ingår i: Proceedings of the International Conference on Microelectronic Test Structures ICMTS. - 0780305353 ; 1992:16-19 March 1992
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Konferensbidrag (refereegranskat)abstract
- A general strategy for direct extraction of MOS transistor DC parameters using only a small number of data points has been developed. This extraction algorithm has been implemented for two semi-empirical SPICE MOS transistor models, MOS3 and BSIM. Fifteen data points were used to determine the ten MOS3 transistor parameters while 25 data points were used to determine the 20 BSIM parameters. It was possible to obtain good agreement between measured and simulated characteristics. It was also shown that series resistance independent parameters can be extracted with a direct parameter extraction algorithm.
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| 6. |
- Karlsson, Peter R., 1963, et al.
(författare)
-
An efficient parameter extraction algorithm for MOS transistor models
- 1992
-
Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 1557-9646 .- 0018-9383. ; 39:9, s. 2070 - 2076
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Tidskriftsartikel (refereegranskat)abstract
- A general, direct parameter extraction algorithm that uses a small number of data points has been developed for MOS transistor models. This extraction algorithm has been tested using two transistor models in SPICE, MOS3, and BSIM. The basic idea of the algorithm is to use only one data point for each transistor parameter. Appropriate selection of the data points ensures physically reasonable values of most extracted parameters. Analytical expressions or rapidly converging numerical equations are used to calculate the parameters. Interaction between different parameters are taken into account. Good agreement between measured and simulated data is obtained from only 15 and 25 data points for MOS3 and BSIM, respectively. The total extraction time for a single transistor is around 40 s for MOS3 and 1 min for BSIM.
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| 7. |
- Karlsson, Peter R., 1963, et al.
(författare)
-
Analytical extraction method for submicron MOS transistor model parameters in the linear region
- 1994
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Ingår i: IEE Proceedings: Circuits, Devices and Systems. - 1350-2409. ; 141:6, s. 457 - 461
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Tidskriftsartikel (refereegranskat)abstract
- A novel four-point technique for direct extraction of model parameters of submicron transistors in the linear region is presented. Detailed analytical expressions are given for the extraction procedure. Theoretical sensitivity analysis shows that the influence of measurement noise can be reduced by proper choice of the applied voltages for which the data points are measured. As an example, a sensitivity of only 2% in the threshold voltage was obtained for 1% noise in the four data points. Experiments show that the extracted parameter values are constant within large intervals of applied voltages. Finally, as a generalisation of the direct extraction method, a least-square fitting technique is suggested which offers the user full freedom concerning the number of data points to be used.
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| 8. |
- Karlsson, Peter R., 1963, et al.
(författare)
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Direct extraction of MOS transistor model parameters
- 1994
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Ingår i: Analog Integrated Circuits and Signal Processing. - 1573-1979 .- 0925-1030. ; 5:3, s. 199-212
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Tidskriftsartikel (refereegranskat)abstract
- The direct extraction method of MOS transistor parameters is summarized and results from its application to the first Norchip 1µm CMOS process run are presented. Two different transistor models (SPICE level 3 and BSIM) have been used, and both models are found to be useful at least down to 1µm devices: typical average relative errors between measured and calculated currents are in the 2-9% range. Two methods of calculating the difference between drawn and effective geometries have been compared. The influence of the source/drain series resistance is also discussed.
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| 9. |
- Karlsson, Peter R., 1963, et al.
(författare)
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Extraction of series-resistance-independent MOS transistor model parameters
- 1992
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 13:11, s. 581-583
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Tidskriftsartikel (refereegranskat)abstract
- It is shown by simulations and experiments how series-resistance-independent intrinsic SPICE level-3 MOS parameters can be extracted when the source and drain series resistance is extracted as a separate parameter. If this resistance is not extracted separately, not only will the mobility reduction factor depend on the series resistance but so will the maximum drift velocity, the saturation field factor, and the static feedback factor. External source and drain resistors have been used to investigate how these parameters depend on the series resistance.
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