| 1. |
- Aitola, Kerttu, et al.
(författare)
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Carbon nanotube-based hybrid hole-transporting material and selective contact for high efficiency perovskite solar cells
- 2016
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Ingår i: Energy & Environmental Science. - : Royal Society of Chemistry (RSC). - 1754-5692 .- 1754-5706. ; 9:2, s. 461-466
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Tidskriftsartikel (refereegranskat)abstract
- We demonstrate a high efficiency perovskite solar cell with a hybrid hole-transporting material-counter electrode based on a thin single-walled carbon nanotube (SWCNT) film and a drop-cast 2,2,7,-7-tetrakis(N, N-di-p-methoxyphenylamine)-9,90-spirobifluorene (Spiro-OMeTAD) hole-transporting material (HTM). The average efficiency of the solar cells was 13.6%, with the record cell yielding 15.5% efficiency. The efficiency of the reference solar cells with spin-coated Spiro-OMeTAD hole-transportingmaterials (HTMs) and an evaporated gold counter electrode was 17.7% (record 18.8%), that of the cells with only a SWCNT counter electrode (CE) without additional HTM was 9.1% (record 11%) and that of the cells with gold deposited directly on the perovskite layer was 5% (record 6.3%). Our results show that it is possible to manufacture high efficiency perovskite solar cells with thin film (thickness less than 1 mu m) completely carbon-based HTMCEs using industrially upscalable manufacturing methods, such as press-transferred CEs and drop-cast HTMs.
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| 2. |
- Dhaka, Veer, et al.
(författare)
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Protective capping and surface passivation of III-V nanowires by atomic layer deposition
- 2016
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Ingår i: AIP Advances. - : American Institute of Physics (AIP). - 2158-3226. ; 6:1
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Tidskriftsartikel (refereegranskat)abstract
- Low temperature (similar to 200 degrees C) grown atomic layer deposition (ALD) films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2 angstrom) film. For InP NWs, the best passivation (similar to 2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.
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| 3. |
- Gorkina, Alexandra L, et al.
(författare)
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Transparent and conductive hybrid graphene/carbon nanotube films
- 2016
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Ingår i: Carbon. - : Elsevier. - 0008-6223 .- 1873-3891. ; 100, s. 501-507
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Tidskriftsartikel (refereegranskat)abstract
- Carbon nanomaterials (carbon nanotubes (CNTs) and graphene) are promising materials for optoelectronic applications, including flexible transparent and conductive films (TCFs) due to their extraordinary electrical, optical and mechanical properties. However, the performance of CNT- or graphene-only TCFs still needs to be improved. One way to enhance the optoelectrical properties of TCFs is to hybridize CNTs and graphene. This approach leads to creation of a novel material that exhibits better properties than its individual constituents. In this work, the novel hybrid CNT-graphene nanomaterial was fabricated by graphene oxide deposition on top of CNT films. The graphene oxide was then reduced by thermal annealing at ambient atmosphere or in H2 atmosphere. At the final step the CNT-graphene hybrids were chemically doped using gold(III) chloride. As a result, we show that the hybrids demonstrate excellent optoelectrical performance with the sheet resistance as low as 73 Ω/□ at 90% transmittance.
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