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Träfflista för sökning "WFRF:(Koo S) srt2:(2010-2014)"

Sökning: WFRF:(Koo S) > (2010-2014)

  • Resultat 1-8 av 8
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1.
  • Yu, K-H, et al. (författare)
  • Comparison of 90-day case-fatality after ischemic stroke between two different stroke outcome registries using propensity score matching analysis
  • 2011
  • Ingår i: Acta Neurologica Scandinavica. - : Hindawi Limited. - 0001-6314 .- 1600-0404. ; 123:5, s. 325-331
  • Tidskriftsartikel (refereegranskat)abstract
    • Background - It has not been clarified whether the disparity in ischemic stroke outcome between populations is caused by ethnic and geographic differences or by variations in case mix. Propensity score matching (PSM) analysis can overcome some analytical problems but is rarely used in stroke outcome research. This study was to compare the ischemic stroke case-fatality between two PSM cohorts of Sweden and Korea. Methods - Prognostic variables related to baseline characteristics and stroke care were included in our PSM model. Then, we selected 7675 Swedish and 1220 Korean patients with ischemic stroke from each stroke registers and performed one-to-one matching based on propensity scores of each patient. Results - After PSM, all measured variables were well balanced in 1163 matched subjects, and the 90-day case-fatality was identical 6.2% (HR 0.997, 95%CI 0.905-1.099) in Sweden and Korea. Conclusions - No difference is found in the 90-day case-fatality in propensity score-matched Swedish and Korean patients with ischemic stroke.
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2.
  • Davies, Neil, et al. (författare)
  • The founding charter of the Genomic Observatories Network
  • 2014
  • Ingår i: GigaScience. - 2047-217X. ; 3:2
  • Tidskriftsartikel (refereegranskat)abstract
    • Abstract The co-authors of this paper hereby state their intention to work together to launch the Genomic Observatories Network (GOs Network) for which this document will serve as its Founding Charter. We define a Genomic Observatory as an ecosystem and/or site subject to long-term scientific research, including (but not limited to) the sustained study of genomic biodiversity from single-celled microbes to multicellular organisms.An international group of 64 scientists first published the call for a global network of Genomic Observatories in January 2012. The vision for such a network was expanded in a subsequent paper and developed over a series of meetings in Bremen (Germany), Shenzhen (China), Moorea (French Polynesia), Oxford (UK), Pacific Grove (California, USA), Washington (DC, USA), and London (UK). While this community-building process continues, here we express our mutual intent to establish the GOs Network formally, and to describe our shared vision for its future. The views expressed here are ours alone as individual scientists, and do not necessarily represent those of the institutions with which we are affiliated.
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3.
  • Kang, M. -S, et al. (författare)
  • Metal work-function and doping-concentration dependent barrier height of Ni-contacts to 4H-SiC with metal-embedded nano-particles
  • 2012
  • Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. - 9783037854198 ; 717-720, s. 857-860
  • Tidskriftsartikel (refereegranskat)abstract
    • We investigated the effect of the metal work-function and doping concentration on the barrier height of Ni-contacts with embedded nano-particles (NPs) on 4H-SiC surfaces. Both n-type epitaxial layers with N-D=1x10(16) cm(-3), and layers doped by phosphorus implantation to a doping concentration of similar to 1x10(19) cm(-3) are used. The barrier height is reduced with increasing doping concentration and the silver (Ag) nano-particles (R similar to 18.5 nm) further enhance the local electric field of the electrical contacts to 4H-SiC in comparison to gold (Au) nano-particles (R similar to 20.2 nm). In the case of ion-implanted samples, the barrier height of the fabricated SiC diode structures with embedded Ag-NPs was significantly reduced by similar to 0.09 eV and similar to 0.25 eV compared to the samples with Au-NPs and the sample without NPs, respectively.
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5.
  • Mazei-Robison, Michelle S., et al. (författare)
  • Role for mTOR Signaling and Neuronal Activity in Morphine-Induced Adaptations in Ventral Tegmental Area Dopamine Neurons
  • 2011
  • Ingår i: Neuron. - : Elsevier BV. - 0896-6273 .- 1097-4199. ; 72:6, s. 977-990
  • Tidskriftsartikel (refereegranskat)abstract
    • While the abuse of opiate drugs continues to rise, the neuroadaptations that occur with long-term drug exposure remain poorly understood. We describe here a series of chronic morphine-induced adaptations in ventral tegmental area (VTA) dopamine neurons, which are mediated via downregulation of AKT-mTORC2 (mammalian target of rapamycin complex-2). Chronic opiates decrease the size of VTA dopamine neurons in rodents, an effect seen in humans as well, and concomitantly increase the excitability of the cells but decrease dopamine output to target regions. Chronic morphine decreases mTORC2 activity, and overexpression of Rictor, a component of mTORC2, prevents morphine-induced changes in cell morphology and activity. Further, local knockout of Rictor in VTA decreases DA soma size and reduces rewarding responses to morphine, consistent with the hypothesis that these adaptations represent a mechanism of reward tolerance. Together, these findings demonstrate a novel role for AKT-mTORC2 signaling in mediating neuroadaptations to opiate drugs of abuse.
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8.
  • Lee, J. -H, et al. (författare)
  • Local anodic oxidation of phosphorus-implanted 4H-SiC by atomic force microscopy
  • 2012
  • Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 0255-5476 .- 1662-9752. - 9783037854198 ; 717-720, s. 905-908
  • Tidskriftsartikel (refereegranskat)abstract
    • In this work, local oxidation behavior in phosphorus ion-implanted 4H-SiC has been investigated by using atomic force microscopy (AFM). The AFM-local oxidation (LO) has been performed on the implanted samples, with and without activation anneal, using varying applied bias (15/20/25 V). It has been clearly shown that the post-implantation annealing process at 1650 °C has a great impact on the local oxidation rate by electrically activating the dopants and by modulating the surface roughness. In addition, the composition of resulting oxides changes depending on the doping level of SiC surfaces.
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  • Resultat 1-8 av 8

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