| 1. |
- Cuadra, Jorge, 1982, et al.
(författare)
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Hybrid dielectric waveguide spectroscopy of individual plasmonic nanoparticles
- 2017
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Ingår i: AIP Advances. - : AIP Publishing. - 2158-3226 .- 2158-3226. ; 7:7, s. Article no: 075207 -
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Tidskriftsartikel (refereegranskat)abstract
- Plasmonics is a mature scientific discipline which is now entering the realm of practical applications. Recently, significant attention has been devoted to on-chip hybrid devices where plasmonic nanoantennas are integrated in standard Si 3 N 4 photonic waveguides. Light in these systems is usually coupled at the waveguide apexes by using multiple objectives and/or tapered optical fibers, rendering the analysis of spectroscopic signals a complicated task. Here, we show how by using a grating coupler and a low NA objective, quantitative spectroscopic information similar to standard dark-field spectroscopy can be obtained at the single-nanoparticle level. This technology may be useful for enabling single-nanoparticle studies in non-linear excitation regimes and/or in complex experimental environments, thus enriching the toolbox of nanophotonic methods.
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| 2. |
- Krückel, Clemens, 1984, et al.
(författare)
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Bandgap engineering in nonlinear silicon nitride waveguides
- 2017
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Ingår i: 2017 Optical Fiber Communication Conference (OFC). - 9781943580231 ; , s. M3F.6 -
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Konferensbidrag (refereegranskat)abstract
- We show that controlling the bandgap of SiN provides an additional degree of freedom for engineering waveguides for nonlinear optics. We show an optimized structure with gamma*maxLeff = 0.17 rad/W and absence of nonlinear loss.
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| 3. |
- Krückel, Clemens, 1984
(författare)
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Integrated Nonlinear Optics in Silicon Nitride Waveguides
- 2017
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Current nanofabrication techniques allow patterning of optical waveguides with submicron cores. This results in strong confinement of light, which leads to high optical intensities. If the waveguides are fabricated with materials that display a large nonlinear Kerr coefficient, then nonlinear optical phenomena can take place in a very efficient manner. Silicon nitride is a very well-studied material in the electronics industry. The material has a large transparency window, from the ultraviolet to the short-wave infrared, and its fabrication is completely compatible with standard techniques formerly developed by the semiconductor industry. Silicon nitride strip waveguides can also confine light, and diverse applications based on nonlinear optics have been demonstrated before. However, these applications required core thickness above 300 nm and they are very challenging to fabricate in a reliable manner with standard deposition techniques. In this thesis, we have studied unconventional silicon nitride waveguides that are more robust for fabrication. The first layout corresponds to a thin strip waveguide with low optical confinement and propagation losses of only 6 dB/m. This technology was originally developed at the University of California, Santa Barbara. We used the technology to demonstrate wavelength conversion of high-speed data. In this thesis, we developed another silicon nitride technology that allowed for high light confinement. We discovered that by modifying the stoichiometry of the film during the deposition process, one could drastically change the optical and mechanical properties of the material. With this technology we demonstrated octave-spanning supercontinuum generation in collaboration with the Technical University of Denmark and XPM-based all-optical processing in collaboration with McGill University. These results indicate that this platform is very suitable for nonlinear integrated optics. The long-term goal of our research is being able to attain an optical parametric amplifier on chip using a continuous-wave pump laser source. In this thesis we benchmarked the losses of high-confinement waveguides for the realization of 10 dB parametric net-gain on chip and identified silicon nitride as the most plausible technology to achieve this goal in the near future.
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| 4. |
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| 5. |
- Krückel, Clemens, 1984, et al.
(författare)
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Optical bandgap engineering in nonlinear silicon nitride waveguides
- 2017
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 25:13, s. 15370-15380
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Tidskriftsartikel (refereegranskat)abstract
- Silicon nitride is a well-established material for photonic devices and integrated circuits. It displays a broad transparency window spanning from the visible to the mid-IR and waveguides can be manufactured with low losses. An absence of nonlinear multi-photon absorption in the erbium lightwave communications band has enabled various nonlinear optic applications in the past decade. Silicon nitride is a dielectric material whose optical and mechanical properties strongly depend on the deposition conditions. In particular, the optical bandgap can be modified with the gas flow ratio during low-pressure chemical vapor deposition (LPCVD). Here we show that this parameter can be controlled in a highly reproducible manner, providing an approach to synthesize the nonlinear Kerr coefficient of the material. This holistic empirical study provides relevant guidelines to optimize the properties of LPCVD silicon nitride waveguides for nonlinear optics applications that rely on the Kerr effect.
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| 6. |
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| 7. |
- Krückel, Clemens, 1984, et al.
(författare)
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Towards on-chip net-gain in CMOS-compatible waveguides
- 2017
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Ingår i: Conference on Lasers and Electro-Optics (CLEO) Europe.
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We theoretically investigate performance requirements to achieve on-chip optical parametric net-gain of 10 dB with CW pump. The investigations cover high confinement CMOS-compatible waveguides based on silicon nitride and silicon.
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| 8. |
- Rezagholipour Dizaji, Mohammad, et al.
(författare)
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Silicon-rich nitride waveguides for ultra-broadband nonlinear signal processing
- 2017
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Ingår i: Optics Express. - 1094-4087 .- 1094-4087. ; 25:11, s. 12100-12108
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Tidskriftsartikel (refereegranskat)abstract
- Silicon nitride (SixNy) waveguides constitute a technology platform to realize optical signal processing based on the nonlinear Kerr effect. Varying the stoichiometry of the core (i. e., x and y in silicon nitride) provides an additional degree of freedom for engineering the waveguide properties, such as nonlinear Kerr parameter and dispersion. We demonstrate low-stress high-confinement silicon-rich nitride waveguides with flat and anomalous dispersion over the entire C and L optical wavelength transmission bands for optical signal processing based on cross-phase modulation. The waveguides do not show any nonlinear loss for a measured optical input intensity of up to 1.5 x 109 W/cm(2). In particular, we achieve wavelength conversion of 10 Gb/s signals across the C band; XPM broadening is also observed in the O band. In addition, we highlight the use of SixNy waveguides for nonlinear microwave photonics. Specifically, we demonstrate radio-frequency spectral monitoring of optical signals with a bandwidth of hundreds of gigahertz.
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| 9. |
- Torres Company, Victor, 1981, et al.
(författare)
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Silicon-rich Nitride Waveguides for Broadband Nonlinear Signal Processing
- 2017
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Ingår i: Optics InfoBase Conference Papers. - 2162-2701. ; Part F122-CLEOPR 2017, s. 1-3
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Konferensbidrag (refereegranskat)abstract
- Silicon nitride waveguides are among the most promising platforms for nonlinear optical processing applications. In this invited contribution we will highlight how the dispersion and Kerr coefficient (n2) can be tuned by precisely controlling the stoichiometry of the waveguide's core material.
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