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| 2. |
- Hertel, Stefan, et al.
(författare)
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Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics
- 2012
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 3
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Tidskriftsartikel (refereegranskat)abstract
- Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing to the absence of an electronic bandgap, graphene switching devices with high on/off ratio are still lacking. Here in the search for a comprehensive concept for wafer-scale graphene electronics, we present a monolithic transistor that uses the entire material system epitaxial graphene on silicon carbide (0001). This system consists of the graphene layer with its vanishing energy gap, the underlying semiconductor and their common interface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as for Schottky contacts side-by-side on the same chip. We demonstrate normally on and normally off operation of a single transistor with on/off ratios exceeding 10 4 and no damping at megahertz frequencies. In its simplest realization, the fabrication process requires only one lithography step to build transistors, diodes, resistors and eventually integrated circuits without the need of metallic interconnects.
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| 3. |
- Johansson Jänkänpää, Hanna, et al.
(författare)
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Non-photochemical quenching capacity in arabidopsis thaliana affects herbivore behaviour
- 2013
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Ingår i: PLOS ONE. - : Public Library of Science (PLoS). - 1932-6203. ; 8:1, s. e53232-
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Tidskriftsartikel (refereegranskat)abstract
- Under natural conditions, plants have to cope with numerous stresses, including light-stress and herbivory. This raises intriguing questions regarding possible trade-offs between stress defences and growth. As part of a program designed to address these questions we have compared herbivory defences and damage in wild type Arabidopsis thaliana and two "photoprotection genotypes", npq4 and oePsbS, which respectively lack and overexpress PsbS (a protein that plays a key role in qE-type non-photochemical quenching). In dual-choice feeding experiments both a specialist (Plutella xylostella) and a generalist (Spodoptera littoralis) insect herbivore preferred plants that expressed PsbS most strongly. In contrast, although both herbivores survived equally well on each of the genotypes, for oviposition female P. xylostella adults preferred plants that expressed PsbS least strongly. However, there were no significant differences between the genotypes in levels of the 10 most prominent glucosinolates; key substances in the Arabidopsis anti-herbivore chemical defence arsenal. After transfer from a growth chamber to the field we detected significant differences in the genotypes' metabolomic profiles at all tested time points, using GC-MS, but no consistent "metabolic signature'' for the lack of PsbS. These findings suggest that the observed differences in herbivore preferences were due to differences in the primary metabolism of the plants rather than their contents of typical "defence compounds". A potentially significant factor is that superoxide accumulated most rapidly and to the highest levels under high light conditions in npq4 mutants. This could trigger changes in planta that are sensed by herbivores either directly or indirectly, following its dismutation to H2O2.
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| 4. |
- Mikhaylov, Aleksey I., et al.
(författare)
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On the ion implantation of phosphorus as a method for the passivation of states at the interface between 4H-SiC and SiO2 produced by thermal oxidation in dry oxygen
- 2014
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Ingår i: Semiconductors (Woodbury, N.Y.). - : Maik Nauka-Interperiodica Publishing. - 1063-7826 .- 1090-6479. ; 48:12, s. 1581-1585
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Tidskriftsartikel (refereegranskat)abstract
- A method is suggested for reducing the density of surface states at the 4H-SiC/SiO2 interface by the implantation of phosphorus ions into a 4H-SiC epitaxial layer immediately before the growth of a gate insulator in an atmosphere of dry oxygen. A significant decrease in the density of surface states is observed at a phosphor-ion concentration at the SiO2/SiC interface exceeding 1018 cm−3. However, together with the passivation of surface states, the introduction of phosphorus ions leads to an increase in the built-in charge in the insulator and also slightly deteriorates the reliability of the gate insulator fabricated by this technique.
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| 5. |
- Roensch, Sebastian, et al.
(författare)
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Drain-current deep level transient spectroscopy investigation on epitaxial graphene/6H-SiC field effect transistors
- 2014
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Ingår i: Mater. Sci. Forum. - 9783038350101 ; , s. 436-439
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Konferensbidrag (refereegranskat)abstract
- The electrically active deep levels in a graphene/silicon carbide field effect transistor (FET) were investigated by drain-current deep level transient spectroscopy (ID-DLTS). An evaluation procedure for ID-DLTS is developed in order to obtain the activation energy, the capture cross section and the trap concentration. We observed three defect centers corresponding to the intrinsic defects E1/E2, Ei and Z1/Z2 in n-type 6H-SiC. The determined parameters have been verified by conventional capacitance DLTS.
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| 6. |
- Sledziewski, Tomasz, et al.
(författare)
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Reduction of density of 4H-SiC/SiO2 interface traps by pre-oxidation phosphorus implantation
- 2014
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Ingår i: Materials Science Forum. - 9783038350101 ; , s. 575-578
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Konferensbidrag (refereegranskat)abstract
- The effect of phosphorus (P) on the electrical properties of the 4H-SiC/SiO2 interface was investigated. Phosphorus was introduced by surface-near ion implantation with varying ion energy and dose prior to thermal oxidation. Secondary ion mass spectrometry revealed that only part of the implanted P followed the oxidation front to the interface. A negative flatband shift due to residual P in the oxide was found from C-V measurements. Conductance method measurements revealed a significant reduction of density of interface traps Dit with energy EC-Eit > 0.3 V for P+-implanted samples with [P]interface = 1.5 · 1018 cm-3 in the SiC layer at the interface. .
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| 7. |
- Steiner, Thorsten, et al.
(författare)
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European Stroke Organisation (ESO) guidelines for the management of spontaneous intracerebral hemorrhage
- 2014
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Ingår i: International Journal of Stroke. - : SAGE Publications. - 1747-4949 .- 1747-4930. ; 9:7, s. 840-855
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Tidskriftsartikel (refereegranskat)abstract
- BackgroundIntracerebral hemorrhage (ICH) accounted for 9% to 27% of all strokes worldwide in the last decade, with high early case fatality and poor functional outcome. In view of recent randomized controlled trials (RCTs) of the management of ICH, the European Stroke Organisation (ESO) has updated its evidence-based guidelines for the management of ICH. MethodA multidisciplinary writing committee of 24 researchers from 11 European countries identified 20 questions relating to ICH management and created recommendations based on the evidence in RCTs using the Grading of Recommendations Assessment, Development and Evaluation (GRADE) approach. ResultsWe found moderate- to high-quality evidence to support strong recommendations for managing patients with acute ICH on an acute stroke unit, avoiding hemostatic therapy for acute ICH not associated with antithrombotic drug use, avoiding graduated compression stockings, using intermittent pneumatic compression in immobile patients, and using blood pressure lowering for secondary prevention. We found moderate-quality evidence to support weak recommendations for intensive lowering of systolic blood pressure to <140mmHg within six-hours of ICH onset, early surgery for patients with a Glasgow Coma Scale score 9-12, and avoidance of corticosteroids. ConclusionThese guidelines inform the management of ICH based on evidence for the effects of treatments in RCTs. Outcome after ICH remains poor, prioritizing further RCTs of interventions to improve outcome.
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