| 1. |
- Engström, Olof, 1943, et al.
(författare)
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Gate stacks
- 2013
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Ingår i: Nanoscale CMOS: Innovative Materials, Modeling and Characterization. - : Wiley. ; , s. 23 - 67
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Bokkapitel (övrigt vetenskapligt/konstnärligt)
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| 2. |
- Illarionov, Yu Yu, et al.
(författare)
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Bias-temperature instability in single-layer graphene field-effect transistors
- 2014
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 105:14, s. 143507-
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Tidskriftsartikel (refereegranskat)abstract
- We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors. Both negative BTI and positive BTI can be benchmarked using models developed for Si technologies. In particular, recovery follows the universal relaxation trend and can be described using the established capture/emission time map approach. We thereby propose a general methodology for assessing the reliability of graphene/dielectric interfaces, which are essential building blocks of graphene devices. (C) 2014 AIP Publishing LLC.
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| 3. |
- Illarionov, Yu.Yu., et al.
(författare)
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Bias-temperature instability in single-layer graphene field-effect transistors : A reliability challenge
- 2014
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Ingår i: 2014 Silicon Nanoelectronics Workshop, SNW 2014. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781479956777
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Konferensbidrag (refereegranskat)abstract
- We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors (GFETs). We demonstrate that the dynamics can be systematically studied when the degradation is expressed in terms of a Dirac point voltage shift. Under these prerequisites it is possible to understand and benchmark both NBTI and PBTI using models previously developed for Si technologies. In particular, we show that the capture/emission time (CET) map approach can be also applied to GFETs and that recovery in GFETs follows the same universal relaxation trend as their Si counterparts. While the measured defect densities can still be considerably larger than those known from Si technology, the dynamics of BTI are in general comparable, allowing for quantitative benchmarking of the graphene/dielectric interface quality.
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| 4. |
- Smith, Anderson David, et al.
(författare)
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Graphene-based piezoresistive pressure sensing for uniaxial and biaxial strains
- 2014
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Ingår i: 2014 Silicon Nanoelectronics Workshop, SNW 2014. - : Institute of Electrical and Electronics Engineers (IEEE). - 9781479956777
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Konferensbidrag (refereegranskat)abstract
- The piezoresistive effect in graphene has been experimentally demonstrated for both uniaxial and biaxial strains. For uniaxial strain, rectangular membranes were measured while circular membranes provided biaxial strain. Gauge factors have also been extracted and compared to previous literature as well as simulations.
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| 5. |
- Smith, Anderson, et al.
(författare)
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Wafer Scale Graphene Transfer for Back End of the Line Device Integration
- 2014
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Ingår i: INT CONF ULTI INTEGR. - 2330-5738. ; , s. 29-32
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Tidskriftsartikel (refereegranskat)abstract
- We report on a wafer scale fabrication of graphene based field effect transistors (GFETs) for use in future radio frequency (RF) and sensor applications. The process is also almost entirely CMOS compatible and uses a scalable graphene transfer method that can be incorporated in standard CMOS back end of the line (BEOL) process flows. Such a process can be used to integrate high speed GFET devices and graphene sensors with silicon CMOS circuits.
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