| 1. |
- Engström, Olof, 1943, et al.
(författare)
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Properties of Metal/High-k Oxide/Graphene Structures
- 2017
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Ingår i: ECS Transactions. - : The Electrochemical Society. - 1938-5862 .- 1938-6737. ; 80:1, s. 157-176
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Konferensbidrag (refereegranskat)abstract
- The challenge of interpreting experimental data from capacitance versus voltage (C-V) measurements on metal/high-k oxide/graphene (MOG) structures is discussed. Theoretical expressions for the influence of interface states, bulk oxide traps, measurement frequency, temperature and puddles are derived and compared with experiments. The nature of oxide traps and their impact on C-V data is treated especially from the view of electron-lattice interaction at electron emission and capture and possible performance as border traps, resembling interface states. We find that characterization on detailed physical origins leading to effects on C-V data is a more complicated issue than the corresponding analysis of metal/oxide/semiconductor (MOS) structures.
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| 2. |
- Illarionov, Y.Yu., et al.
(författare)
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Bias-temperature instability on the back gate of single-layer double-gated graphene field-effect transistors
- 2016
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Ingår i: Japanese Journal of Applied Physics. - : Institute of Physics (IOP). - 0021-4922 .- 1347-4065. ; 55:4
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Tidskriftsartikel (refereegranskat)abstract
- We study the positive and negative bias-temperature instabilities (PBTI and NBTI) on the back gate of single-layer double-gated graphene fieldeffect transistors (GFETs). By analyzing the resulting degradation at different stress times and oxide fields we show that there is a significant asymmetry between PBTI and NBTI with respect to their dependences on these parameters. Finally, we compare the results obtained on the high-k top gate and SiO2 back gate of the same device and show that SiO2 gate is more stable with respect to BTI.
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| 3. |
- Illarionov, Yu.Yu., et al.
(författare)
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Hot-carrier degradation in single-layer double-gated graphene field-effect transistors
- 2015
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Ingår i: IEEE International Reliability Physics Symposium Proceedings. - : IEEE conference proceedings. - 9781467373623 ; , s. XT21-XT26
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Konferensbidrag (refereegranskat)abstract
- We report a first study of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs). Our results show that HCD in GFETs is recoverable, similarly to the bias-temperature instability (BTI). Depending on the top gate bias polarity, the presence of HCD may either accelerate or suppress BTI. Contrary to BTI, which mainly results in a change of the charged trap density in the oxide, HCD also leads to a mobility degradation which strongly correlates with the magnitude of the applied stress.
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| 4. |
- Illarionov, Yu.Yu., et al.
(författare)
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Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors
- 2015
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Ingår i: EUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. - 9781479969111 ; , s. 81-84
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Konferensbidrag (refereegranskat)abstract
- We study the impact of hot-carrier degradation (HCD) on the performance of graphene field-effect transistors (GFETs) for different polarities of HC and bias stress. Our results show that the impact of HCD consists in a change of both charged defect density and carrier mobility. At the same time, the mobility degradation agrees with an attractive/repulsive scattering asymmetry and can be understood based on the analysis of the defect density variation.
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| 5. |
- Vaziri, Sam, et al.
(författare)
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Going ballistic : Graphene hot electron transistors
- 2015
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Ingår i: Solid State Communications. - : Elsevier. - 0038-1098 .- 1879-2766. ; 224, s. 64-75
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Tidskriftsartikel (refereegranskat)abstract
- This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.
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