| 1. |
- Makela, Jaakko, et al.
(författare)
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Comparison of chemical, electronic, and optical properties of Mg-doped AlGaN
- 2016
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Ingår i: Journal of Physical Chemistry C. - : American Chemical Society (ACS). - 1932-7447 .- 1932-7455. ; 120:50, s. 28591-28597
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Tidskriftsartikel (refereegranskat)abstract
- Hydrogen, carbon, and oxygen are common unintentional impurities of Al(x)Ga(1−x)N crystals. This impurity structure and its interplay with Mg impurities in Al(x)Ga(1−x)N semiconductors are relevant to develop the p-type nitride crystals for various devices (e.g, LEDs, transistors, gas sensors) but are still unclear. Here we have investigated Mg-doped Al0.5Ga0.5N before and after postgrowth annealing with valence-band and core-level photoelectron spectroscopy, photoluminescence, and resistivity measurements. First, it is found that a surface part of the Al0.5Ga0.5N crystal is surprisingly inert with air and stable against air exposure-induced changes. Thus, the relatively surface-sensitive photoelectron spectroscopy measurements reflect in this case also the bulk crystal characteristics. The measurements reveal the presence of deep states up to 1 eV above valence-band maximum before and after the annealing and that oxygen and carbon occupy N lattice sites (i.e., ON and CN). The model where CN-induced acceptor states in the band gap participate in the blue emission (photoluminescence) is supported. Furthermore, the presented Mg 2p core-level spectra demonstrate that part of Mg atoms forms direct bond(s) with oxygen in the bulklike structure of Al0.5Ga0.5N and that the chemical environment of Mg atoms is much richer than was expected previously.
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| 2. |
- Norrbo, Isabella, et al.
(författare)
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Mechanisms of Tenebrescence and Persistent Luminescence in Synthetic Hackmanite Na8Al6Si6O24(Cl,S)(2)
- 2016
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Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 8:18, s. 11592-11602
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Tidskriftsartikel (refereegranskat)abstract
- Synthetic hackmanites, Na8Al6Si6O24(Cl,S)(2), showing efficient purple tenebrescence and blue/white persistent luminescence were studied using different spectroscopic techniques to obtain a quantified view on the storage and release of optical energy in these materials. The persistent luminescence emitter was identified as impurity Ti3+ originating from the precursor materials used in the synthesis, and the energy storage for persistent luminescence was postulated to take place in oxygen vacancies within the aluminosilicate framework. Tenebrescence, on the other hand, was observed to function within the Na-4(Cl,S) entities located in the cavities of the aluminosilicate framework. The mechanism of persistent luminescence and tenebrescence in hackmanite is presented for the first time.
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