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High-k/InGaAs inter...
High-k/InGaAs interface defects at cryogenic temperature
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- Cherkaoui, K. (författare)
- Tyndall National Institute
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- La Torraca, P. (författare)
- University of Modena and Reggio Emilia
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- Lin, J. (författare)
- Tyndall National Institute
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visa fler...
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- Maraviglia, N. (författare)
- Tyndall National Institute
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- Andersen, A. (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Wernersson, L. E. (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Nanoelektronik,Forskargrupper vid Lunds universitet,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,LTH profilområde: AI och digitalisering,LU profilområde: Ljus och material,Lunds universitets profilområden,Other operations, LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,LTH Profile Area: AI and Digitalization,Faculty of Engineering, LTH,LU Profile Area: Light and Materials,Lund University Profile areas
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- Padovani, A. (författare)
- University of Modena and Reggio Emilia
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Larcher, L. (författare)
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- Hurley, P. K. (författare)
- Tyndall National Institute
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(creator_code:org_t)
- 2023
- 2023
- Engelska.
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Ingår i: Solid-State Electronics. - 0038-1101. ; 207
- Relaterad länk:
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http://dx.doi.org/10... (free)
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Oxide defects in the high-k/InGaAs MOS system are investigated. The behaviour of these traps is explored from room temperature down to 10 K. This study reveals that the exchange of free carriers between oxide states and either the conduction or the valence band is strongly temperature dependant. The capture and emission of electrons is strongly suppressed at 10 K as demonstrated by the collapse of the capacitance frequency dispersion in accumulation for n-InGaAs MOS devices, though hysteresis in the C-V sweeps is still present at 10 K. Phonon assisted tunnelling processes are considered in the simulation of electrical characteristics. The simulated data match very well the experimental characteristics and provide energy and spatial mapping of oxide defects. The multi phonon theory also help explain the impedance data temperature dependence. This study also reveals an asymmetry in the free carrier trapping between n and p type devices, where hole trapping is more significant at 10 K.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Cryogenic impedance measurements
- Device simulation
- High-k/InGaAs interface defects
- Oxide defects
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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