| 1. |
- Krause, Maximilian, et al.
(författare)
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Microscopic insight into the impact of the KF post-deposition treatment on optoelectronic properties of (Ag,Cu)(In,Ga)Se2 solar cells
- 2022
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Ingår i: Progress in Photovoltaics. - : John Wiley & Sons. - 1062-7995 .- 1099-159X. ; 30:1, s. 109-115
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Tidskriftsartikel (refereegranskat)abstract
- It is attractive to alloy Cu(In,Ga)Se2 solar-cell absorbers with Ag (ACIGSe), since they lead to similar device performances as the Ag-free absorber layers, while they can be synthesized at much lower deposition temperatures. However, a KF post-deposition treatment (PDT) of the ACIGSe absorber surface is necessary to achieve higher open-circuit voltages (Voc). The present work provides microscopic insights to the effects of this KF PDT, employing correlative scanning-electron microscope techniques on identical positions of cross-sectional specimens of the cell stacks. We found that the increase in Voc after the KF PDT can be explained by the removal of Cu-poor, Ag-poor, and Ga-rich regions near the ACIGSe/CdS interface. The KF PDT leads, when optimally doped, to a very thin K-Ag-Cu-Ga-In-Se layer between ACIGSe and CdS. If the KF dose is too large, we find that Cu-poor and K-rich regions form near the ACIGSe/CdS interface with enhanced nonradiative recombination which explains a decrease in the Voc. This effect occurs in addition to the presence of a (K,Ag,Cu)InSe2 intermediate layer, that might be responsible for limiting the short-current density of the solar cells due to a current blocking behavior.
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| 2. |
- Sopiha, Kostiantyn, et al.
(författare)
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Chalcogenide Perovskites : Tantalizing Prospects, Challenging Materials
- 2022
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Ingår i: Advanced Optical Materials. - : John Wiley & Sons. - 2162-7568 .- 2195-1071. ; 10:3
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Tidskriftsartikel (refereegranskat)abstract
- Chalcogenide perovskites have recently emerged into the spotlight as highly robust, earth abundant, and nontoxic candidates for various energy conversion applications, not least photovoltaics (PV). Now, a serious effort is required to determine if they can emulate the PV performance of the better-known, part-organic halide perovskites, in applications such as tandem solar cells. This review summarizes the surprisingly large body of literature pertaining to chalcogenide perovskites, which have been investigated for many years despite only recently being considered for applications. The confusing variety of claims coming from computational materials discovery is clarified, and it is specified which chalcogenide perovskites actually exist and should form the focus of experimental work. The highly interesting optoelectronic and transport properties of the known materials at their current stage of development are summarized, which makes a clear case for investigating them further. The existing synthesis literature is collated, which provides some important and possibly unnoticed clues to experimentalists grappling with these somewhat challenging materials. The authors hope that the highlighting of this information will facilitate further exciting studies, better approaches, and new progress for chalcogenide perovskites.
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| 3. |
- Thomas, Sinju, et al.
(författare)
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Effects of material properties of band-gap-graded Cu(In,Ga)Se-2 thin films on the onset of the quantum efficiency spectra of corresponding solar cells
- 2022
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Ingår i: Progress in Photovoltaics. - : John Wiley & Sons. - 1062-7995 .- 1099-159X. ; 30:10, s. 1238-1246
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Tidskriftsartikel (refereegranskat)abstract
- Polycrystalline Cu(In,Ga)Se-2 (CIGSe) thin-film solar cells exhibit gradual onset in their external quantum efficiency (EQE) spectra whose shape can be affected by various CIGSe material properties. Apart from influences on the charge-carrier collection, a broadening of the EQE onset leads to enhanced radiative losses in open-circuit voltage (V-oc). In the present work, Gaussian broadening of parameters describing the EQE onset of thin-film solar cells, represented by the standard deviation, sigma(total), was evaluated to study the impacts of the effective band-gap energy, the electron diffusion length, and the Ga/In gradient in the CIGSe absorber. It is shown that sigma(total) can be disentangled into contributions of these material properties, in addition to a residual component sigma(residual). Effectively, sigma(total) depends only on a contribution related to the Ga/In gradient as well as on sigma(residual). The present work highlights the connection of this compositional gradient, the microstructure in the polycrystalline CIGSe absorber, and the luminescence emission with the residual component sigma(residual). It is demonstrated that a flat band-gap with no compositional gradient in the bulk of the CIGSe absorber is essential to obtain the lowest sigma(total) values and thus result in lower recombination losses and gains in V-oc.
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