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- Rodilla, Helena, 1982, et al.
(författare)
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Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs
- 2011
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Ingår i: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February through 11 February. - 9781424478637
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Konferensbidrag (refereegranskat)abstract
- In this work, by means of Monte Carlo simulations, the static and dynamic performance of InAs/AlSb HEMTs at low drain voltages is analyzed. A very good agreement between experimental and simulation results has been obtained not only for the static behavior, but also for small signal equivalent circuit parameters like C gs , C gd , f t and f c . Problems arise when trying to reproduce the values of g d and C ds due to the experimental frequency dispersion, leading also to discrepancies in the values obtained for the intrinsic g m and also f max . © 2011 IEEE.
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| 2. |
- Vasallo, Beatriz G., et al.
(författare)
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Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate
- 2011
-
Ingår i: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011, Palma de Mallorca; 8 February 2011 through 11 February. - 9781424478637
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Konferensbidrag (refereegranskat)abstract
- We present a physical analysis of the kink effect in InAs/AlSb High Electron Mobility Transistors (HEMTs) performed by means of a semiclassical 2D ensemble Monte Carlo simulator. InAs-channel HEMTs are very susceptible to suffer from impact ionization phenomena due to the small bandgap of InAs. These processes, jointly with the associated hole transport, are at the origin of the kink effect. When the drain-to-source voltage is high enough for the onset of impact ionization, generated holes tend to accumulate at the gate-drain side of the buffer because of the valence-band energy barrier present between the buffer and the channel. Due to this pile up of positive charge the channel is further opened and the drain current increases, leading to the kink in the I-V characteristics. © 2011 IEEE.
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