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| 2. |
- Thinh, N.Q., et al.
(författare)
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Properties of Ga-interstitial defects in AlxGa 1-xNyP1-y
- 2005
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 71:12
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Tidskriftsartikel (refereegranskat)abstract
- A detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of two Gai defects (Gai-A and Gai-B). New information on the electronic properties of these defects and the recombination processes leading to the observation of the ODMR signals will be provided. These defects are deep-level defects. In conditions when the defect is directly involved in radiative recombination of the near-infrared photoluminescence band, the energy level of the Gai-B defect was estimated to be deeper than ~1.2 eV from either the conduction or valence band edge. In most cases, however, these defects act as nonradiative recombination centers, reducing the efficiency of light emission from the alloys. They can thus undermine the performance of potential photonic devices. High thermal stability is observed for these defects. ©2005 The American Physical Society.
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| 5. |
- Dagnelund, Daniel, 1980-, et al.
(författare)
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Effect of nitrogen ion bombardment on defect formation and luminescence efficiency of GaNP epilayers grown by molecular-beam epitaxy
- 2006
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 88:10, s. 101904-
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Tidskriftsartikel (refereegranskat)abstract
- Radiative efficiency of GaNP epilayers grown on GaP substrates by solid-source molecular beam epitaxy is significantly improved by reduced nitrogen ion bombardment during the growth. Based on the results of temperature-dependent photoluminescence (PL) and optically detected magnetic resonance studies (ODMR), the observed improvements are attributed to reduced formation of defects, such as a Ga interstitial related defect and an unidentified defect revealed by ODMR. We demonstrate that these defects act as competing recombination centers, which promote thermal quenching of the PL intensity and result in a substantial (34×) decrease in room-temperature PL intensity. © 2006 American Institute of Physics.
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| 6. |
- Dagnelund, Daniel, 1980-, et al.
(författare)
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Spin resonance spectroscopy of grown-in defects in Ga(In)NP alloys
- 2008
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Ingår i: 7th International Conference on Physics of Light-Matter Coupling in Nanostructures, 2007. - : Elsevier Ltd.. ; , s. 620-625
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Konferensbidrag (refereegranskat)abstract
- We employ the optically detected magnetic resonance (ODMR) technique to study and identify important grown-in defects in Ga(In)NP grown by molecular-beam epitaxy (MBE). Several types of defects were revealed from ODMR studies. The dominant defects were found to be related to Ga interstitials, evident form their characteristic hyperfine interaction arising from the spin interaction between the electron and the Ga nucleus. Some other as yet unidentified intrinsic defects were also found to be commonly present in the alloys. The effects of growth conditions (ion bombardment, N2 gas flow, etc.) and post-growth rapid thermal annealing on the formation of these defects were studied in detail, shedding light on the formation mechanism of defects.
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| 7. |
- Hancock, Anne L, et al.
(författare)
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A CTCF-binding silencer regulates the imprinted genes AWT1 and WT1-AS and exhibits sequential epigenetic defects during Wilms' tumourigenesis
- 2007
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Ingår i: Human Molecular Genetics. - : Oxford University Press (OUP). - 0964-6906 .- 1460-2083. ; 16:3, s. 343-354
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Tidskriftsartikel (refereegranskat)abstract
- We have shown previously that AWT1 and WT1-AS are functionally imprinted in human kidney. In the adult kidney, expression of both transcripts is restricted to the paternal allele, with the silent maternal allele retaining methylation at the WT1 antisense regulatory region (WT1 ARR). Here, we report characterization of the WT1 ARR differentially methylated region and show that it contains a transcriptional silencer element acting on both the AWT1 and WT1-AS promoters. DNA methylation of the silencer results in increased transcriptional repression, and the silencer is also shown to be an in vitro and in vivo target site for the imprinting regulator protein CTCF. Binding of CTCF is methylation-sensitive and limited to the unmethylated silencer. Potentiation of the silencer activity is demonstrated after CTCF protein is knocked down, suggesting a novel silencer-blocking activity for CTCF. We also report assessment of WT1 ARR methylation in developmental and tumour tissues, including the first analysis of Wilms' tumour precursor lesions, nephrogenic rests. Nephrogenic rests show increases in methylation levels relative to foetal kidney and reductions relative to the adult kidney, together with biallelic expression of AWT1 and WT1-AS. Notably, the methylation status of CpG residues within the CTCF target site appears to distinguish monoallelic and biallelic expression states. Our data suggest that failure of methylation spreading at the WT1 ARR early in renal development, followed by imprint erasure, occurs during Wilms' tumourigenesis. We propose a model wherein imprinting defects at chromosome 11p13 may contribute to Wilms' tumourigenesis.
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| 9. |
- Ketelhut, S., et al.
(författare)
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gamma-Ray Spectroscopy at the Limits : First Observation of Rotational Bands in Lr-255
- 2009
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Ingår i: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 102:21, s. 212501-
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Tidskriftsartikel (refereegranskat)abstract
- The rotational band structure of Lr-255 has been investigated using advanced in-beam gamma-ray spectroscopic techniques. To date, Lr-255 is the heaviest nucleus to be studied in this manner. One rotational band has been unambiguously observed and strong evidence for a second rotational structure was found. The structures are tentatively assigned to be based on the 1/2(-)[521] and 7/2(-)[514] Nilsson states, consistent with assignments from recently obtained alpha decay data. The experimental rotational band dynamic moment of inertia is used to test self-consistent mean-field calculations using the Skyrme SLy4 interaction and a density-dependent pairing force.
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| 11. |
- Vorona, Igor, 1967-, et al.
(författare)
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Intrinsic paramagnetic defects in GaNP alloys grown on silicon
- 2006
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Ingår i: 210th ECS Meeting Volume 3, Issue 5. - : Electrochemical Society. ; , s. 231-236
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- Wepresent our recent results of grown-in defects in the GaNPalloy lattice matched to Si, by optically detected magnetic resonance.One of the defects was identified as the Gai-B complex,commonly formed in dilute nitrides. The remaining defects are suggestedto be probably related to intrinsic defects as well.
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